MTD120C10J4 MOSFET. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

MTD120C10J4 datasheet

..1. Size:400K cystek
mtd120c10j4.pdf pdf_icon

Spec. No. C986J4 Issued Date 2014.12.05 CYStech Electronics Corp. Revised Date Page No. 1/13 N & P-Channel Enhancement Mode Power MOSFET N-CH P-CH MTD120C10J4 BVDSS 100V -100V ID@VGS=10V(-10V), TC=25 C 9.3A -12A ID@VGS=10V(-10V), TA=25 C 2.0A -2.5A Features 122m 91m RDSON(TYP)@VGS=10V(-10V) Low gate charge 132m 106m Simple drive require

5.1. Size:467K cystek
mtd120c10kq8.pdf pdf_icon

Spec. No. C945Q8 Issued Date 2014.01.03 CYStech Electronics Corp. Revised Date 2015.03.10 Page No. 1/12 N- AND P-Channel Logic Level Enhancement Mode MOSFET MTD120C10KQ8 N-CH P-CH BVDSS 100V -100V ID @ TA=25 C, GS=10V(-10V) 2.4A -2.8A ID @ TC=25 C, GS=10V(-10V) 3.4A -3.9A RDSON(TYP.)@VGS=10V(-10V) 124m 102m Features Simple drive requirement RDSON(TYP.)@VG

5.2. Size:398K cystek
mtd120c10kj4.pdf pdf_icon

Spec. No. C945J4 Issued Date 2014.02.12 CYStech Electronics Corp. Revised Date 2014.06.13 Page No. 1/13 N & P-Channel Enhancement Mode Power MOSFET N-CH P-CH MTD120C10KJ4 BVDSS 100V -100V ID @ VGS=10V(-10V) 2A -2.4A RDSON(typ.) @VGS=(-)10V 125 m 103 m RDSON(typ.) @VGS=(-)4.5V 132 m 117 m Features Low Gate Charge Simple Drive Requirement RoH

9.1. Size:276K motorola
mtd12n06e.pdf pdf_icon

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTD12N06EZL/D Designer's Data Sheet MTD12N06EZL TMOS E-FET. High Energy Power FET DPAK for Surface Mount or TMOS POWER FET 12 AMPERES Insertion Mount 60 VOLTS N Channel Enhancement Mode Silicon Gate RDS(on) = 0.180 OHM This advanced TMOS power FET is designed to withstand high energy in the avalanche and mode

Otros transistores... MSB22A04Q8 , MSB55N03N3 , MSC22N03 , MSC37N03 , MTC1421G6 , MTC4503LQ8 , MTC5806V8 , MTD10N10ELT4 , IRF640 , MTD20P03HDLT4 , MTD20P06HDLT4 , MTD2955VT4 , MTD5P06VT4 , MTD5P06VT4G , MTD6N15T4 , MTD6N15T4G , MTD6N15T4GV .