MTD120C10J4 Todos los transistores

 

MTD120C10J4 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: MTD120C10J4
   Tipo de FET: MOSFET
   Polaridad de transistor: NP

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 37.5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 9.3 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2.4 V
   Qgⓘ - Carga de la puerta: 8 nC
   trⓘ - Tiempo de subida: 16.6 nS
   Cossⓘ - Capacitancia de salida: 42 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.16 Ohm
   Paquete / Cubierta: TO-252AD-5

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MTD120C10J4 Datasheet (PDF)

 ..1. Size:400K  cystek
mtd120c10j4.pdf

MTD120C10J4
MTD120C10J4

Spec. No. : C986J4 Issued Date : 2014.12.05 CYStech Electronics Corp.Revised Date : Page No. : 1/13 N & P-Channel Enhancement Mode Power MOSFET N-CH P-CHMTD120C10J4 BVDSS 100V -100VID@VGS=10V(-10V), TC=25C 9.3A -12AID@VGS=10V(-10V), TA=25C 2.0A -2.5AFeatures 122m 91m RDSON(TYP)@VGS=10V(-10V) Low gate charge 132m 106m Simple drive require

 5.1. Size:467K  cystek
mtd120c10kq8.pdf

MTD120C10J4
MTD120C10J4

Spec. No. : C945Q8 Issued Date : 2014.01.03 CYStech Electronics Corp.Revised Date : 2015.03.10 Page No. : 1/12 N- AND P-Channel Logic Level Enhancement Mode MOSFET MTD120C10KQ8 N-CH P-CHBVDSS 100V -100VID @ TA=25C, GS=10V(-10V) 2.4A -2.8AID @ TC=25C, GS=10V(-10V) 3.4A -3.9ARDSON(TYP.)@VGS=10V(-10V) 124m 102m Features Simple drive requirement RDSON(TYP.)@VG

 5.2. Size:398K  cystek
mtd120c10kj4.pdf

MTD120C10J4
MTD120C10J4

Spec. No. : C945J4 Issued Date : 2014.02.12 CYStech Electronics Corp.Revised Date : 2014.06.13 Page No. : 1/13 N & P-Channel Enhancement Mode Power MOSFET N-CH P-CHMTD120C10KJ4 BVDSS 100V -100VID @ VGS=10V(-10V) 2A -2.4ARDSON(typ.) @VGS=(-)10V 125 m 103 m RDSON(typ.) @VGS=(-)4.5V 132 m 117 m Features Low Gate Charge Simple Drive Requirement RoH

 9.1. Size:276K  motorola
mtd12n06e.pdf

MTD120C10J4
MTD120C10J4

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTD12N06EZL/DDesigner's Data SheetMTD12N06EZLTMOS E-FET.High Energy Power FETDPAK for Surface Mount orTMOS POWER FET12 AMPERESInsertion Mount60 VOLTSNChannel EnhancementMode Silicon GateRDS(on) = 0.180 OHMThis advanced TMOS power FET is designed to withstand highenergy in the avalanche and mode

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