MTD120C10J4 MOSFET Datasheet: NP-Ch, 100V, 9.3A. Full specification with pinout and replacement list

MTD120C10J4 Specs and Replacement

Type Designator: MTD120C10J4

Type of Transistor: MOSFET

Type of Control Channel: NP-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 37.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 9.3 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 16.6 nS

Cossⓘ - Output Capacitance: 42 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.16 Ohm

Package: TO-252AD-5

MTD120C10J4 substitution

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MTD120C10J4 datasheet

..1. Size:400K cystek
mtd120c10j4.pdf pdf_icon

Spec. No. C986J4 Issued Date 2014.12.05 CYStech Electronics Corp. Revised Date Page No. 1/13 N & P-Channel Enhancement Mode Power MOSFET N-CH P-CH MTD120C10J4 BVDSS 100V -100V ID@VGS=10V(-10V), TC=25 C 9.3A -12A ID@VGS=10V(-10V), TA=25 C 2.0A -2.5A Features 122m 91m RDSON(TYP)@VGS=10V(-10V) Low gate charge 132m 106m Simple drive require... See More ⇒

5.1. Size:467K cystek
mtd120c10kq8.pdf pdf_icon

Spec. No. C945Q8 Issued Date 2014.01.03 CYStech Electronics Corp. Revised Date 2015.03.10 Page No. 1/12 N- AND P-Channel Logic Level Enhancement Mode MOSFET MTD120C10KQ8 N-CH P-CH BVDSS 100V -100V ID @ TA=25 C, GS=10V(-10V) 2.4A -2.8A ID @ TC=25 C, GS=10V(-10V) 3.4A -3.9A RDSON(TYP.)@VGS=10V(-10V) 124m 102m Features Simple drive requirement RDSON(TYP.)@VG... See More ⇒

5.2. Size:398K cystek
mtd120c10kj4.pdf pdf_icon

Spec. No. C945J4 Issued Date 2014.02.12 CYStech Electronics Corp. Revised Date 2014.06.13 Page No. 1/13 N & P-Channel Enhancement Mode Power MOSFET N-CH P-CH MTD120C10KJ4 BVDSS 100V -100V ID @ VGS=10V(-10V) 2A -2.4A RDSON(typ.) @VGS=(-)10V 125 m 103 m RDSON(typ.) @VGS=(-)4.5V 132 m 117 m Features Low Gate Charge Simple Drive Requirement RoH... See More ⇒

9.1. Size:276K motorola
mtd12n06e.pdf pdf_icon

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTD12N06EZL/D Designer's Data Sheet MTD12N06EZL TMOS E-FET. High Energy Power FET DPAK for Surface Mount or TMOS POWER FET 12 AMPERES Insertion Mount 60 VOLTS N Channel Enhancement Mode Silicon Gate RDS(on) = 0.180 OHM This advanced TMOS power FET is designed to withstand high energy in the avalanche and mode... See More ⇒

Detailed specifications: MSB22A04Q8, MSB55N03N3, MSC22N03, MSC37N03, MTC1421G6, MTC4503LQ8, MTC5806V8, MTD10N10ELT4, IRF640, MTD20P03HDLT4, MTD20P06HDLT4, MTD2955VT4, MTD5P06VT4, MTD5P06VT4G, MTD6N15T4, MTD6N15T4G, MTD6N15T4GV