MTD120C10J4
MOSFET. Datasheet pdf. Equivalent
Type Designator: MTD120C10J4
Type of Transistor: MOSFET
Type of Control Channel: NP
-Channel
Pdⓘ
- Maximum Power Dissipation: 37.5
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.4
V
|Id|ⓘ - Maximum Drain Current: 9.3
A
Tjⓘ - Maximum Junction Temperature: 175
°C
Qgⓘ - Total Gate Charge: 8
nC
trⓘ - Rise Time: 16.6
nS
Cossⓘ -
Output Capacitance: 42
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.16
Ohm
Package: TO-252AD-5
MTD120C10J4
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
MTD120C10J4
Datasheet (PDF)
..1. Size:400K cystek
mtd120c10j4.pdf
Spec. No. : C986J4 Issued Date : 2014.12.05 CYStech Electronics Corp.Revised Date : Page No. : 1/13 N & P-Channel Enhancement Mode Power MOSFET N-CH P-CHMTD120C10J4 BVDSS 100V -100VID@VGS=10V(-10V), TC=25C 9.3A -12AID@VGS=10V(-10V), TA=25C 2.0A -2.5AFeatures 122m 91m RDSON(TYP)@VGS=10V(-10V) Low gate charge 132m 106m Simple drive require
5.1. Size:467K cystek
mtd120c10kq8.pdf
Spec. No. : C945Q8 Issued Date : 2014.01.03 CYStech Electronics Corp.Revised Date : 2015.03.10 Page No. : 1/12 N- AND P-Channel Logic Level Enhancement Mode MOSFET MTD120C10KQ8 N-CH P-CHBVDSS 100V -100VID @ TA=25C, GS=10V(-10V) 2.4A -2.8AID @ TC=25C, GS=10V(-10V) 3.4A -3.9ARDSON(TYP.)@VGS=10V(-10V) 124m 102m Features Simple drive requirement RDSON(TYP.)@VG
5.2. Size:398K cystek
mtd120c10kj4.pdf
Spec. No. : C945J4 Issued Date : 2014.02.12 CYStech Electronics Corp.Revised Date : 2014.06.13 Page No. : 1/13 N & P-Channel Enhancement Mode Power MOSFET N-CH P-CHMTD120C10KJ4 BVDSS 100V -100VID @ VGS=10V(-10V) 2A -2.4ARDSON(typ.) @VGS=(-)10V 125 m 103 m RDSON(typ.) @VGS=(-)4.5V 132 m 117 m Features Low Gate Charge Simple Drive Requirement RoH
9.1. Size:276K motorola
mtd12n06e.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTD12N06EZL/DDesigner's Data SheetMTD12N06EZLTMOS E-FET.High Energy Power FETDPAK for Surface Mount orTMOS POWER FET12 AMPERESInsertion Mount60 VOLTSNChannel EnhancementMode Silicon GateRDS(on) = 0.180 OHMThis advanced TMOS power FET is designed to withstand highenergy in the avalanche and mode
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