MTD20P03HDLT4 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MTD20P03HDLT4
Código: 20P03HL
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 75 W
Voltaje máximo drenador - fuente |Vds|: 30 V
Voltaje máximo fuente - puerta |Vgs|: 15 V
Corriente continua de drenaje |Id|: 19 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 2 V
Carga de la puerta (Qg): 15 nC
Tiempo de subida (tr): 178 nS
Conductancia de drenaje-sustrato (Cd): 360 pF
Resistencia entre drenaje y fuente RDS(on): 0.099 Ohm
Paquete / Cubierta: DPAK
Búsqueda de reemplazo de MOSFET MTD20P03HDLT4
MTD20P03HDLT4 Datasheet (PDF)
mtd20p03hdlt4.pdf
MTD20P03HDLPreferred DevicePower MOSFET20 Amps, 30 Volts, Logic LevelP-Channel DPAKThis Power MOSFET is designed to withstand high energy in theavalanche and commutation modes. This energy efficient design alsohttp://onsemi.comoffers a drain-to-source diode with a fast recovery time. Designed forlow voltage, high speed switching applications in power supplies,V(BR)DSS RDS(on
mtd20p03hdl.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTD20P03HDL/DDesigner's Data SheetMTD20P03HDLHDTMOS E-FET.Motorola Preferred DeviceHigh Density Power FETTMOS POWER FETDPAK for Surface MountLOGIC LEVELPChannel EnhancementMode Silicon Gate19 AMPERES30 VOLTS This advanced HDTMOS power FET is designed to withstandRDS(on) = 0.099 OHMhigh energy
mtd20p03hd.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTD20P03HDL/DDesigner's Data SheetMTD20P03HDLHDTMOS E-FET.Motorola Preferred DeviceHigh Density Power FETTMOS POWER FETDPAK for Surface MountLOGIC LEVELPChannel EnhancementMode Silicon Gate19 AMPERES30 VOLTS This advanced HDTMOS power FET is designed to withstandRDS(on) = 0.099 OHMhigh energy
mtd20p06hd.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTD20P06HDL/DDesigner's Data SheetMTD20P06HDLHDTMOS E-FETMotorola Preferred DeviceHigh Density Power FETTMOS POWER FETDPAK for Surface MountLOGIC LEVELPChannel EnhancementMode Silicon Gate15 AMPERES60 VOLTSThis advanced highcell density HDTMOS EFET is designed toRDS(on) = 175 Mwithst
mtd20p06hdl.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTD20P06HDL/DDesigner's Data SheetMTD20P06HDLHDTMOS E-FETMotorola Preferred DeviceHigh Density Power FETTMOS POWER FETDPAK for Surface MountLOGIC LEVELPChannel EnhancementMode Silicon Gate15 AMPERES60 VOLTSThis advanced highcell density HDTMOS EFET is designed toRDS(on) = 175 Mwithst
mtd20p06hdlt4.pdf
MTD20P06HDLPreferred DevicePower MOSFET20 Amps, 60 Volts, LogicLevelP-Channel DPAKhttp://onsemi.comThis Power MOSFET is designed to withstand high energy in theavalanche and commutation modes. The energy efficient design alsooffers a drain-to-source diode with a fast recovery time. Designed for20 AMPERES, 60 VOLTSlow-voltage, high-speed switching applications in power supp
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