All MOSFET. MTD20P03HDLT4 Datasheet

 

MTD20P03HDLT4 Datasheet and Replacement


   Type Designator: MTD20P03HDLT4
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 75 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 15 V
   |Id| ⓘ - Maximum Drain Current: 19 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 178 nS
   Cossⓘ - Output Capacitance: 360 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.099 Ohm
   Package: DPAK
 

 MTD20P03HDLT4 substitution

   - MOSFET ⓘ Cross-Reference Search

 

MTD20P03HDLT4 Datasheet (PDF)

 ..1. Size:177K  onsemi
 mtd20p03hdlt4.pdf pdf_icon

MTD20P03HDLT4

MTD20P03HDLPreferred DevicePower MOSFET20 Amps, 30 Volts, Logic LevelP-Channel DPAKThis Power MOSFET is designed to withstand high energy in theavalanche and commutation modes. This energy efficient design alsohttp://onsemi.comoffers a drain-to-source diode with a fast recovery time. Designed forlow voltage, high speed switching applications in power supplies,V(BR)DSS RDS(on

 3.1. Size:215K  motorola
 mtd20p03hdl.pdf pdf_icon

MTD20P03HDLT4

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTD20P03HDL/DDesigner's Data SheetMTD20P03HDLHDTMOS E-FET.Motorola Preferred DeviceHigh Density Power FETTMOS POWER FETDPAK for Surface MountLOGIC LEVELPChannel EnhancementMode Silicon Gate19 AMPERES30 VOLTS This advanced HDTMOS power FET is designed to withstandRDS(on) = 0.099 OHMhigh energy

 4.1. Size:244K  motorola
 mtd20p03hd.pdf pdf_icon

MTD20P03HDLT4

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTD20P03HDL/DDesigner's Data SheetMTD20P03HDLHDTMOS E-FET.Motorola Preferred DeviceHigh Density Power FETTMOS POWER FETDPAK for Surface MountLOGIC LEVELPChannel EnhancementMode Silicon Gate19 AMPERES30 VOLTS This advanced HDTMOS power FET is designed to withstandRDS(on) = 0.099 OHMhigh energy

 7.1. Size:308K  motorola
 mtd20p06hd.pdf pdf_icon

MTD20P03HDLT4

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTD20P06HDL/DDesigner's Data SheetMTD20P06HDLHDTMOS E-FETMotorola Preferred DeviceHigh Density Power FETTMOS POWER FETDPAK for Surface MountLOGIC LEVELPChannel EnhancementMode Silicon Gate15 AMPERES60 VOLTSThis advanced highcell density HDTMOS EFET is designed toRDS(on) = 175 Mwithst

SHOW MORE

Datasheet: MSB55N03N3 , MSC22N03 , MSC37N03 , MTC1421G6 , MTC4503LQ8 , MTC5806V8 , MTD10N10ELT4 , MTD120C10J4 , IRF1404 , MTD20P06HDLT4 , MTD2955VT4 , MTD5P06VT4 , MTD5P06VT4G , MTD6N15T4 , MTD6N15T4G , MTD6N15T4GV , MTD6N20ET4 .

History: TK9A60D

Keywords - MTD20P03HDLT4 MOSFET datasheet

 MTD20P03HDLT4 cross reference
 MTD20P03HDLT4 equivalent finder
 MTD20P03HDLT4 lookup
 MTD20P03HDLT4 substitution
 MTD20P03HDLT4 replacement

 

 
Back to Top

 


 
.