MTM76325 Todos los transistores

 

MTM76325 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: MTM76325
   Tipo de FET: MOSFET
   Polaridad de transistor: NP

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.7 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 10 V
   |Id|ⓘ - Corriente continua de drenaje: 1.7 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Cossⓘ - Capacitancia de salida: 18 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.12 Ohm
   Paquete / Cubierta: WSMINI6-F1-B

 Búsqueda de reemplazo de MOSFET MTM76325

 

MTM76325 Datasheet (PDF)

 ..1. Size:429K  panasonic
mtm76325.pdf

MTM76325
MTM76325

Doc No. TT4-EA-13949Revision. 2Product StandardsMOS FETMTM763250LBFMTM763250LBFSilicon N-channel MOSFET (FET1)Unit : mm Silicon P-channel MOSFET (FET2)2.00.2 0.13For SwitchingFor DC-DC Converter6 5 4 FeaturesLow Drain-source On-state Resistance : RDS(on)typ. N-ch = 95 mVGS = 4.0 V) P-ch:300 m (VGS = -4.0 V)Halogen-free / RoHS compliant1

 7.1. Size:579K  panasonic
mtm76320.pdf

MTM76325
MTM76325

This product complies with the RoHS Directive (EU 2002/95/EC).MTM76320Silicon N-channel MOS FET (FET1)Silicon P-channel MOS FET (FET2)For DC-DC converter circuitsFor switching circuits Overview PackageMTM76320 is the composite MOS FET (N-channel and P-channel MOS CodeFET) that is highly suitable for DC-DC converter and other switching circuits. WSMini6-F1-BPackage

 9.1. Size:282K  panasonic
mtm76420.pdf

MTM76325
MTM76325

This product complies with the RoHS Directive (EU 2002/95/EC).MTM76420Silicon P-channel MOS FETFor DC-DC converter circuitsFor switching circuits Overview PackageMTM76420 is the dual P-channel MOS FET that is highly suitable for DC- CodeDC converter and other switching circuits. WSMini6-F1-B Pin Name Features 1: Source 4: Source Dual P-channel MOS FET

 9.2. Size:420K  panasonic
mtm76111.pdf

MTM76325
MTM76325

This product complies with the RoHS Directive (EU 2002/95/EC).MTM76111Silicon P-channel MOS FETFor load switch circuits Overview Package MTM76111 is the low on-resistance P-channel MOS FET designed for load Codeswitch circuits. WSMini6-F1-B Pin Name Features 1: Drain 4: Source Low drain-source ON resistance: RDS(on) typ. = 26 mW (VGS = 4.5 V)

 9.3. Size:279K  panasonic
mtm76123.pdf

MTM76325
MTM76325

This product complies with the RoHS Directive (EU 2002/95/EC).MTM76123Silicon P-channel MOS FETFor load switch circuitsFor switching circuits Overview Package Code MTM76123 is the low on-resistance P-channel MOS FET designed for load switch circuits. WSMini6-F1-B Pin Name 1: Drain 4: Source Features 2: Drain 5: Drain Low drain-source ON resistance:

 9.4. Size:437K  panasonic
mtm76110.pdf

MTM76325
MTM76325

This product complies with the RoHS Directive (EU 2002/95/EC).MTM76110Silicon P-channel MOS FETFor load switch circuitsFor switching circuits Overview Package CodeMTM76110 is the low on resistance P-channel MOS FET designed for load switch circuits. WSMini6-F1-B Pin Name Features 1: Drain 4: Source 2: Drain 5: Drain Low drain-source ON resistance: RDS

 9.5. Size:448K  panasonic
mtm76520.pdf

MTM76325
MTM76325

This product complies with the RoHS Directive (EU 2002/95/EC).MTM76520Silicon N-channel MOS FETFor DC-DC converter circuitsFor switching circuits Overview Package CodeMTM76520 is the dual N-channel MOS FET that is highly suitable for DC-DC converter and other switching circuits. WSMini6-F1-B Pin Name 1: Source 1 4: Source 2 Features 2: Gate 1 5: Gate 2

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History: IPG16N10S4L-61A

 

 
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History: IPG16N10S4L-61A

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