MTM76325 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: MTM76325
Маркировка: DE
Тип транзистора: MOSFET
Полярность: NP
Pdⓘ - Максимальная рассеиваемая мощность: 0.7 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 20 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 10 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 1.3 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 1.7 A
Tjⓘ - Максимальная температура канала: 150 °C
Cossⓘ - Выходная емкость: 18 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.12 Ohm
Тип корпуса: WSMINI6-F1-B
MTM76325 Datasheet (PDF)
mtm76325.pdf
Doc No. TT4-EA-13949Revision. 2Product StandardsMOS FETMTM763250LBFMTM763250LBFSilicon N-channel MOSFET (FET1)Unit : mm Silicon P-channel MOSFET (FET2)2.00.2 0.13For SwitchingFor DC-DC Converter6 5 4 FeaturesLow Drain-source On-state Resistance : RDS(on)typ. N-ch = 95 mVGS = 4.0 V) P-ch:300 m (VGS = -4.0 V)Halogen-free / RoHS compliant1
mtm76320.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).MTM76320Silicon N-channel MOS FET (FET1)Silicon P-channel MOS FET (FET2)For DC-DC converter circuitsFor switching circuits Overview PackageMTM76320 is the composite MOS FET (N-channel and P-channel MOS CodeFET) that is highly suitable for DC-DC converter and other switching circuits. WSMini6-F1-BPackage
mtm76420.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).MTM76420Silicon P-channel MOS FETFor DC-DC converter circuitsFor switching circuits Overview PackageMTM76420 is the dual P-channel MOS FET that is highly suitable for DC- CodeDC converter and other switching circuits. WSMini6-F1-B Pin Name Features 1: Source 4: Source Dual P-channel MOS FET
mtm76111.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).MTM76111Silicon P-channel MOS FETFor load switch circuits Overview Package MTM76111 is the low on-resistance P-channel MOS FET designed for load Codeswitch circuits. WSMini6-F1-B Pin Name Features 1: Drain 4: Source Low drain-source ON resistance: RDS(on) typ. = 26 mW (VGS = 4.5 V)
mtm76123.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).MTM76123Silicon P-channel MOS FETFor load switch circuitsFor switching circuits Overview Package Code MTM76123 is the low on-resistance P-channel MOS FET designed for load switch circuits. WSMini6-F1-B Pin Name 1: Drain 4: Source Features 2: Drain 5: Drain Low drain-source ON resistance:
mtm76110.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).MTM76110Silicon P-channel MOS FETFor load switch circuitsFor switching circuits Overview Package CodeMTM76110 is the low on resistance P-channel MOS FET designed for load switch circuits. WSMini6-F1-B Pin Name Features 1: Drain 4: Source 2: Drain 5: Drain Low drain-source ON resistance: RDS
mtm76520.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).MTM76520Silicon N-channel MOS FETFor DC-DC converter circuitsFor switching circuits Overview Package CodeMTM76520 is the dual N-channel MOS FET that is highly suitable for DC-DC converter and other switching circuits. WSMini6-F1-B Pin Name 1: Source 1 4: Source 2 Features 2: Gate 1 5: Gate 2
Другие MOSFET... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRFP250N , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
Список транзисторов
Обновления
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918