MTN1N60L3 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

MTN1N60L3 Datasheet (PDF)

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Spec. No. : C721L3 Issued Date : 2014.11.27 CYStech Electronics Corp.Revised Date : Page No. : 1/9 N-Channel Enhancement Mode Power MOSFET BVDSS 600VMTN1N60L3ID@VGS=10V, TA=25C 0.4A ID@VGS=10V, TC=25C 0.9A RDSON@VGS=10V, ID=0.2A 7.8(typ) Description The MTN1N60L3 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast sw

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Spec. No. : C721A3 Issued Date : 2010.10.18 CYStech Electronics Corp.Revised Date : Page No. : 1/10 N-Channel Enhancement Mode Power MOSFETBVDSS : 600V RDS(ON) : 8 (typ.) MTN1N60A3 ID : 1A Description The MTN1N60A3 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and

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Spec. No. : C437I3 Issued Date : 2009.01.23 CYStech Electronics Corp.Revised Date :2011.11.10 Page No. : 1/10 N-Channel Enhancement Mode Power MOSFETBVDSS : 650V RDS(ON) : 9.5 MTN1N65I3 ID : 1.0A Description The MTN1N65I3 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resista

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