MTN1N60L3 Datasheet and Replacement
Type Designator: MTN1N60L3
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 3.1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 0.4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 7.6 nS
Cossⓘ - Output Capacitance: 5 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 9.5 Ohm
Package: SOT-223
MTN1N60L3 substitution
MTN1N60L3 Datasheet (PDF)
mtn1n60l3.pdf

Spec. No. : C721L3 Issued Date : 2014.11.27 CYStech Electronics Corp.Revised Date : Page No. : 1/9 N-Channel Enhancement Mode Power MOSFET BVDSS 600VMTN1N60L3ID@VGS=10V, TA=25C 0.4A ID@VGS=10V, TC=25C 0.9A RDSON@VGS=10V, ID=0.2A 7.8(typ) Description The MTN1N60L3 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast sw
mtn1n60a3.pdf

Spec. No. : C721A3 Issued Date : 2010.10.18 CYStech Electronics Corp.Revised Date : Page No. : 1/10 N-Channel Enhancement Mode Power MOSFETBVDSS : 600V RDS(ON) : 8 (typ.) MTN1N60A3 ID : 1A Description The MTN1N60A3 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and
mtn1n65i3.pdf

Spec. No. : C437I3 Issued Date : 2009.01.23 CYStech Electronics Corp.Revised Date :2011.11.10 Page No. : 1/10 N-Channel Enhancement Mode Power MOSFETBVDSS : 650V RDS(ON) : 9.5 MTN1N65I3 ID : 1.0A Description The MTN1N65I3 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resista
Datasheet: MTM8N60 , MTM98140 , MTM981400BBF , MTM98240 , MTM982400BBF , MTMC8E2A , MTN12N30FP , MTN12N60BFP , K3569 , MTN2300AN3 , MTN4N65F3 , MTN8N65FI , MTN9N50FP , MTP10N08 , MTP10N10 , MTP10N10E , MTP10N10ELG .
History: TK10Q60W | WMO120N04TS
Keywords - MTN1N60L3 MOSFET datasheet
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History: TK10Q60W | WMO120N04TS



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