MTN4N65F3 Todos los transistores

 

MTN4N65F3 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MTN4N65F3

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 100 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 650 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 4 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 33 nS

Cossⓘ - Capacitancia de salida: 51 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 3.5 Ohm

Encapsulados: TO-263

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MTN4N65F3 datasheet

 ..1. Size:393K  cystek
 mtn4n65f3.pdf pdf_icon

MTN4N65F3

Spec. No. C797F3 Issued Date 2015.03.06 CYStech Electronics Corp. Revised Date Page No. 1/ 11 N-Channel Enhancement Mode Power MOSFET BVDSS 650V RDS(ON) 3 (typ.) MTN4N65F3 ID 4A Features Low On Resistance Simple Drive Requirement Fast Switching Characteristic Pb-free lead plating and RoHS compliant package Applications Adapter

 6.1. Size:504K  cystek
 mtn4n65fp.pdf pdf_icon

MTN4N65F3

Spec. No. C797FP Issued Date 2010.06.09 CYStech Electronics Corp. Revised Date 2014.07.28 Page No. 1/ 9 N-Channel Enhancement Mode Power MOSFET BVDSS 650V RDS(ON) 3 (typ.) MTN4N65FP ID 4A Description The MTN4N65FP is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-

 7.1. Size:332K  cystek
 mtn4n65i3.pdf pdf_icon

MTN4N65F3

Spec. No. C797I3 Issued Date 2010.03.29 CYStech Electronics Corp. Revised Date 2013.10.18 Page No. 1/11 N-Channel Enhancement Mode Power MOSFET BVDSS 650V RDS(ON) 3.0 (typ.) MTN4N65I3 ID 4A Description The MTN4N65I3 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-re

 7.2. Size:327K  cystek
 mtn4n65j3.pdf pdf_icon

MTN4N65F3

Spec. No. C797J3 Issued Date 2011.09.14 CYStech Electronics Corp. Revised Date 2013.12.26 Page No. 1/11 N-Channel Enhancement Mode Power MOSFET BVDSS 650V RDS(ON) 3.0 (typ.) MTN4N65J3 ID 4A Features Low On Resistance Simple Drive Requirement Low Gate Charge Fast Switching Characteristic Pb-free lead plating and halogen-free package

MOSTRAR MÁS

Otros transistores... MTM981400BBF , MTM98240 , MTM982400BBF , MTMC8E2A , MTN12N30FP , MTN12N60BFP , MTN1N60L3 , MTN2300AN3 , 2SK3878 , MTN8N65FI , MTN9N50FP , MTP10N08 , MTP10N10 , MTP10N10E , MTP10N10ELG , MTP10N25 , MTP10N35 .

 

 

 

 

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