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MTP10N10E MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MTP10N10E

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 75 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 10 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 80 nS

Cossⓘ - Capacitancia de salida: 400 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.25 Ohm

Encapsulados: TO-220AB

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MTP10N10E datasheet

 ..1. Size:203K  motorola
mtp10n10e.pdf pdf_icon

MTP10N10E

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP10N10E/D Designer's Data Sheet MTP10N10E TMOS IV Power Field Effect Transistor N Channel Enhancement Mode Silicon Gate TMOS POWER FETs This advanced E series of TMOS power MOSFETs is designed 10 AMPERES to withstand high energy in the avalanche and commutation 100 VOLTS modes. These new energy efficient d

 ..2. Size:108K  onsemi
mtp10n10e.pdf pdf_icon

MTP10N10E

MTP10N10E Preferred Device Power MOSFET 10 Amps, 100 Volts N Channel TO 220 This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The energy efficient design also http //onsemi.com offers drain to source diodes with fast recovery times. Designed for low voltage, high speed switching applications in power supplies, 10 AMPERES converters

 0.1. Size:221K  motorola
mtp10n10el.pdf pdf_icon

MTP10N10E

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP10N10EL/D Designer's Data Sheet MTP10N10EL Logic Level TMOS E-FET. Motorola Preferred Device Power Field Effect Transistor N Channel Enhancement Mode Silicon Gate TMOS POWER FET This advanced TMOS power FET is designed to withstand high 10 AMPERES energy in the avalanche and commutation modes. This new energy

 0.2. Size:237K  motorola
mtp10n10erev0x.pdf pdf_icon

MTP10N10E

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP10N10E/D Designer's Data Sheet MTP10N10E TMOS IV Power Field Effect Transistor N Channel Enhancement Mode Silicon Gate TMOS POWER FETs This advanced E series of TMOS power MOSFETs is designed 10 AMPERES to withstand high energy in the avalanche and commutation 100 VOLTS modes. These new energy efficient d

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