MTP10N10E PDF and Equivalents Search

 

MTP10N10E Specs and Replacement

Type Designator: MTP10N10E

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 75 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 10 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 80 nS

Cossⓘ - Output Capacitance: 400 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.25 Ohm

Package: TO-220AB

MTP10N10E substitution

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MTP10N10E datasheet

 ..1. Size:203K  motorola
mtp10n10e.pdf pdf_icon

MTP10N10E

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP10N10E/D Designer's Data Sheet MTP10N10E TMOS IV Power Field Effect Transistor N Channel Enhancement Mode Silicon Gate TMOS POWER FETs This advanced E series of TMOS power MOSFETs is designed 10 AMPERES to withstand high energy in the avalanche and commutation 100 VOLTS modes. These new energy efficient d... See More ⇒

 ..2. Size:108K  onsemi
mtp10n10e.pdf pdf_icon

MTP10N10E

MTP10N10E Preferred Device Power MOSFET 10 Amps, 100 Volts N Channel TO 220 This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The energy efficient design also http //onsemi.com offers drain to source diodes with fast recovery times. Designed for low voltage, high speed switching applications in power supplies, 10 AMPERES converters... See More ⇒

 0.1. Size:221K  motorola
mtp10n10el.pdf pdf_icon

MTP10N10E

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP10N10EL/D Designer's Data Sheet MTP10N10EL Logic Level TMOS E-FET. Motorola Preferred Device Power Field Effect Transistor N Channel Enhancement Mode Silicon Gate TMOS POWER FET This advanced TMOS power FET is designed to withstand high 10 AMPERES energy in the avalanche and commutation modes. This new energy... See More ⇒

 0.2. Size:237K  motorola
mtp10n10erev0x.pdf pdf_icon

MTP10N10E

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP10N10E/D Designer's Data Sheet MTP10N10E TMOS IV Power Field Effect Transistor N Channel Enhancement Mode Silicon Gate TMOS POWER FETs This advanced E series of TMOS power MOSFETs is designed 10 AMPERES to withstand high energy in the avalanche and commutation 100 VOLTS modes. These new energy efficient d... See More ⇒

Detailed specifications: MTN12N60BFP, MTN1N60L3, MTN2300AN3, MTN4N65F3, MTN8N65FI, MTN9N50FP, MTP10N08, MTP10N10, IRLB4132, MTP10N10ELG, MTP10N25, MTP10N35, MTP10N40, MTP10N40E, MTP12N08L, RFH10N45, RFH10N50

Keywords - MTP10N10E MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.

 

 

 

 

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