MTP10N10E Specs and Replacement
Type Designator: MTP10N10E
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 75 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 10 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 80 nS
Cossⓘ - Output Capacitance: 400 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.25 Ohm
Package: TO-220AB
MTP10N10E substitution
- MOSFET ⓘ Cross-Reference Search
MTP10N10E datasheet
mtp10n10e.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP10N10E/D Designer's Data Sheet MTP10N10E TMOS IV Power Field Effect Transistor N Channel Enhancement Mode Silicon Gate TMOS POWER FETs This advanced E series of TMOS power MOSFETs is designed 10 AMPERES to withstand high energy in the avalanche and commutation 100 VOLTS modes. These new energy efficient d... See More ⇒
mtp10n10e.pdf
MTP10N10E Preferred Device Power MOSFET 10 Amps, 100 Volts N Channel TO 220 This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The energy efficient design also http //onsemi.com offers drain to source diodes with fast recovery times. Designed for low voltage, high speed switching applications in power supplies, 10 AMPERES converters... See More ⇒
mtp10n10el.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP10N10EL/D Designer's Data Sheet MTP10N10EL Logic Level TMOS E-FET. Motorola Preferred Device Power Field Effect Transistor N Channel Enhancement Mode Silicon Gate TMOS POWER FET This advanced TMOS power FET is designed to withstand high 10 AMPERES energy in the avalanche and commutation modes. This new energy... See More ⇒
mtp10n10erev0x.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP10N10E/D Designer's Data Sheet MTP10N10E TMOS IV Power Field Effect Transistor N Channel Enhancement Mode Silicon Gate TMOS POWER FETs This advanced E series of TMOS power MOSFETs is designed 10 AMPERES to withstand high energy in the avalanche and commutation 100 VOLTS modes. These new energy efficient d... See More ⇒
Detailed specifications: MTN12N60BFP, MTN1N60L3, MTN2300AN3, MTN4N65F3, MTN8N65FI, MTN9N50FP, MTP10N08, MTP10N10, IRLB4132, MTP10N10ELG, MTP10N25, MTP10N35, MTP10N40, MTP10N40E, MTP12N08L, RFH10N45, RFH10N50
Keywords - MTP10N10E MOSFET specs
MTP10N10E cross reference
MTP10N10E equivalent finder
MTP10N10E pdf lookup
MTP10N10E substitution
MTP10N10E replacement
Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
🌐 : EN ES РУ
LIST
Last Update
MOSFET: AUB062N08BG | AUB060N08AG | AUB056N10 | AUB056N08BGL | AUB050N085 | AUB050N055 | AUB045N12 | AUB045N10BT | AUB039N10 | AUB034N10
Popular searches
2sa750 replacement | 2sc984 replacement | a1046 transistor | hy19p03 | 2sk2749 | c2577 transistor | k3563 transistor | 2sc1775 datasheet
