MTP12P10 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: MTP12P10
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 75 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 12 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4.5 V
   Qgⓘ - Carga de la puerta: 33 nC
   trⓘ - Tiempo de subida: 150 nS
   Cossⓘ - Capacitancia de salida: 575 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.3 Ohm
   Paquete / Cubierta: TO-220AB

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MTP12P10 Datasheet (PDF)

..1. Size:164K motorola
mtp12p10.pdf

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTP12P10/DDesigner's Data SheetMTP12P10Power Field Effect TransistorPChannel EnhancementMode Silicon GateThis TMOS Power FET is designed for medium voltage, highTMOS POWER FETspeed power switching applications such as switching regulators,12 AMPERESconverters, solenoid and relay drivers.100 VOLTS S

..2. Size:90K njs
mtm12p05 mtm12p06 mtm12p08 mtm12p10 mtp12p05 mtp12p06 mtp12p08 mtp12p10.pdf

0.1. Size:190K motorola
mtp12p10rev1a.pdf

0.2. Size:72K onsemi
mtp12p10-d mtp12p10g.pdf

MTP12P10Preferred DevicePower MOSFET12 Amps, 100 VoltsP-Channel TO-220This Power MOSFET is designed for medium voltage, high speedhttp://onsemi.compower switching applications such as switching regulators, converters,solenoid and relay drivers.12 AMPERES, 100 VOLTSFeaturesRDS(on) = 300 mW Silicon Gate for Fast Switching Speeds - Switching Times SpecifiedP-Channela

9.1. Size:177K 1
irf630 irf631 irf632 irf633 irf230 irf231 irf232 irf233 mtp12n18 mtp12n20.pdf

9.2. Size:239K motorola
mtp12n10erev1a.pdf

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTP12N10E/DDesigner's Data SheetMTP12N10ETMOS E-FET.Motorola Preferred DevicePower Field Effect TransistorNChannel EnhancementMode Silicon GateTMOS POWER FETThis advanced TMOS EFET is designed to withstand high12 AMPERESenergy in the avalanche and commutation modes. The new energy100 VOLTSeffi

9.3. Size:222K motorola
mtp12n06ez.pdf

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTP12N06EZL/DDesigner's Data SheetMTP12N06EZLTMOS E-FET.High Energy Power FETNChannel EnhancementMode Silicon GateTMOS POWER FETThis advanced TMOS power FET is designed to withstand high12 AMPERESenergy in the avalanche mode and switch efficiently. This new high60 VOLTSenergy device also offers a g

9.4. Size:203K motorola
mtp12n10e.pdf

9.5. Size:194K motorola
mtp12n06ezl.pdf

9.6. Size:177K fairchild semi
irf630-6333 irf230-233 mtp12n18-20.pdf

9.7. Size:101K njs
mtp12n18.pdf

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mtm12n10 mtp12n10e.pdf

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mtp12n20.pdf

9.10. Size:107K njs
mtp12n08l mtp12n10l.pdf

9.11. Size:568K cn vbsemi
mtp12n10l.pdf

MTP12N10Lwww.VBsemi.comN-Channel 100-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETV(BR)DSS (V) RDS(on) ()ID (A) 175 C Junction TemperatureRoHS0.092 at VGS = 10 V10018COMPLIANT Low Thermal Resistance Package 100 % Rg TestedAPPLICATIONS Isolated DC/DC ConvertersTO-220AB DGSG D SN-Channel MOSFETTop ViewABSOLUTE M

9.12. Size:294K cn vbsemi
mtp12n10e.pdf

MTP12N10Ewww.VBsemi.comN-Channel 100-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETV(BR)DSS (V) RDS(on) ()ID (A) 175 C Junction TemperatureRoHS0.092 at VGS = 10 V10018COMPLIANT Low Thermal Resistance Package 100 % Rg TestedAPPLICATIONS Isolated DC/DC ConvertersTO-220AB DGSG D SN-Channel MOSFETTop ViewABSOLUTE M

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

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