MTP12P10 Todos los transistores

 

MTP12P10 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: MTP12P10
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS


   Máxima disipación de potencia (Pd): 75 W
   Voltaje máximo drenador - fuente |Vds|: 100 V
   Voltaje máximo fuente - puerta |Vgs|: 20 V
   Corriente continua de drenaje |Id|: 12 A
   Temperatura máxima de unión (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Tensión umbral entre puerta y fuente |Vgs(th)|: 4.5 V
   Carga de la puerta (Qg): 33 nC
   Tiempo de subida (tr): 150 nS
   Conductancia de drenaje-sustrato (Cd): 575 pF
   Resistencia entre drenaje y fuente RDS(on): 0.3 Ohm
   Paquete / Cubierta: TO-220AB

 Búsqueda de reemplazo de MOSFET MTP12P10

 

MTP12P10 Datasheet (PDF)

 ..1. Size:164K  motorola
mtp12p10.pdf

MTP12P10 MTP12P10

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTP12P10/DDesigner's Data SheetMTP12P10Power Field Effect TransistorPChannel EnhancementMode Silicon GateThis TMOS Power FET is designed for medium voltage, highTMOS POWER FETspeed power switching applications such as switching regulators,12 AMPERESconverters, solenoid and relay drivers.100 VOLTS S

 0.1. Size:190K  motorola
mtp12p10rev1a.pdf

MTP12P10 MTP12P10

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTP12P10/DDesigner's Data SheetMTP12P10Power Field Effect TransistorPChannel EnhancementMode Silicon GateThis TMOS Power FET is designed for medium voltage, highTMOS POWER FETspeed power switching applications such as switching regulators,12 AMPERESconverters, solenoid and relay drivers.100 VOLTS S

 0.2. Size:72K  onsemi
mtp12p10-d mtp12p10g.pdf

MTP12P10 MTP12P10

MTP12P10Preferred DevicePower MOSFET12 Amps, 100 VoltsP-Channel TO-220This Power MOSFET is designed for medium voltage, high speedhttp://onsemi.compower switching applications such as switching regulators, converters,solenoid and relay drivers.12 AMPERES, 100 VOLTSFeaturesRDS(on) = 300 mW Silicon Gate for Fast Switching Speeds - Switching Times SpecifiedP-Channela

 9.2. Size:239K  motorola
mtp12n10erev1a.pdf

MTP12P10 MTP12P10

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTP12N10E/DDesigner's Data SheetMTP12N10ETMOS E-FET.Motorola Preferred DevicePower Field Effect TransistorNChannel EnhancementMode Silicon GateTMOS POWER FETThis advanced TMOS EFET is designed to withstand high12 AMPERESenergy in the avalanche and commutation modes. The new energy100 VOLTSeffi

 9.3. Size:222K  motorola
mtp12n06ez.pdf

MTP12P10 MTP12P10

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTP12N06EZL/DDesigner's Data SheetMTP12N06EZLTMOS E-FET.High Energy Power FETNChannel EnhancementMode Silicon GateTMOS POWER FETThis advanced TMOS power FET is designed to withstand high12 AMPERESenergy in the avalanche mode and switch efficiently. This new high60 VOLTSenergy device also offers a g

 9.4. Size:203K  motorola
mtp12n10e.pdf

MTP12P10 MTP12P10

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTP12N10E/DDesigner's Data SheetMTP12N10ETMOS E-FET.Motorola Preferred DevicePower Field Effect TransistorNChannel EnhancementMode Silicon GateTMOS POWER FETThis advanced TMOS EFET is designed to withstand high12 AMPERESenergy in the avalanche and commutation modes. The new energy100 VOLTSeffi

 9.5. Size:194K  motorola
mtp12n06ezl.pdf

MTP12P10 MTP12P10

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTP12N06EZL/DDesigner's Data SheetMTP12N06EZLTMOS E-FET.High Energy Power FETNChannel EnhancementMode Silicon GateTMOS POWER FETThis advanced TMOS power FET is designed to withstand high12 AMPERESenergy in the avalanche mode and switch efficiently. This new high60 VOLTSenergy device also offers a g

 9.6. Size:177K  fairchild semi
irf630-6333 irf230-233 mtp12n18-20.pdf

MTP12P10 MTP12P10

 9.7. Size:101K  njs
mtp12n18.pdf

MTP12P10 MTP12P10

 9.8. Size:94K  njs
mtm12n10 mtp12n10e.pdf

MTP12P10 MTP12P10

 9.9. Size:81K  njs
mtp12n20.pdf

MTP12P10 MTP12P10

 9.10. Size:107K  njs
mtp12n08l mtp12n10l.pdf

MTP12P10 MTP12P10

 9.11. Size:568K  cn vbsemi
mtp12n10l.pdf

MTP12P10 MTP12P10

MTP12N10Lwww.VBsemi.comN-Channel 100-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETV(BR)DSS (V) RDS(on) ()ID (A) 175 C Junction TemperatureRoHS0.092 at VGS = 10 V10018COMPLIANT Low Thermal Resistance Package 100 % Rg TestedAPPLICATIONS Isolated DC/DC ConvertersTO-220AB DGSG D SN-Channel MOSFETTop ViewABSOLUTE M

 9.12. Size:294K  cn vbsemi
mtp12n10e.pdf

MTP12P10 MTP12P10

MTP12N10Ewww.VBsemi.comN-Channel 100-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETV(BR)DSS (V) RDS(on) ()ID (A) 175 C Junction TemperatureRoHS0.092 at VGS = 10 V10018COMPLIANT Low Thermal Resistance Package 100 % Rg TestedAPPLICATIONS Isolated DC/DC ConvertersTO-220AB DGSG D SN-Channel MOSFETTop ViewABSOLUTE M

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

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