MTP12P10 MOSFET Datasheet: P-Ch, 100V, 12A. Full specification with pinout and replacement list

MTP12P10 Specs and Replacement

Type Designator: MTP12P10

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 75 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 12 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 150 nS

Cossⓘ - Output Capacitance: 575 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.3 Ohm

Package: TO-220AB

MTP12P10 substitution

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MTP12P10 datasheet

..1. Size:164K motorola
mtp12p10.pdf pdf_icon

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP12P10/D Designer's Data Sheet MTP12P10 Power Field Effect Transistor P Channel Enhancement Mode Silicon Gate This TMOS Power FET is designed for medium voltage, high TMOS POWER FET speed power switching applications such as switching regulators, 12 AMPERES converters, solenoid and relay drivers. 100 VOLTS S... See More ⇒

..2. Size:90K njs
mtm12p05 mtm12p06 mtm12p08 mtm12p10 mtp12p05 mtp12p06 mtp12p08 mtp12p10.pdf pdf_icon

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0.1. Size:190K motorola
mtp12p10rev1a.pdf pdf_icon

0.2. Size:72K onsemi
mtp12p10-d mtp12p10g.pdf pdf_icon

MTP12P10 Preferred Device Power MOSFET 12 Amps, 100 Volts P-Channel TO-220 This Power MOSFET is designed for medium voltage, high speed http //onsemi.com power switching applications such as switching regulators, converters, solenoid and relay drivers. 12 AMPERES, 100 VOLTS Features RDS(on) = 300 mW Silicon Gate for Fast Switching Speeds - Switching Times Specified P-Channel a... See More ⇒