MTP12P10G MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MTP12P10G
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 75 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 12 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 150 nS
Cossⓘ - Capacitancia de salida: 575 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.3 Ohm
Encapsulados: TO-220AB
Búsqueda de reemplazo de MTP12P10G MOSFET
- Selecciónⓘ de transistores por parámetros
MTP12P10G datasheet
mtp12p10-d mtp12p10g.pdf
MTP12P10 Preferred Device Power MOSFET 12 Amps, 100 Volts P-Channel TO-220 This Power MOSFET is designed for medium voltage, high speed http //onsemi.com power switching applications such as switching regulators, converters, solenoid and relay drivers. 12 AMPERES, 100 VOLTS Features RDS(on) = 300 mW Silicon Gate for Fast Switching Speeds - Switching Times Specified P-Channel a
mtp12p10.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP12P10/D Designer's Data Sheet MTP12P10 Power Field Effect Transistor P Channel Enhancement Mode Silicon Gate This TMOS Power FET is designed for medium voltage, high TMOS POWER FET speed power switching applications such as switching regulators, 12 AMPERES converters, solenoid and relay drivers. 100 VOLTS S
mtp12p10rev1a.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP12P10/D Designer's Data Sheet MTP12P10 Power Field Effect Transistor P Channel Enhancement Mode Silicon Gate This TMOS Power FET is designed for medium voltage, high TMOS POWER FET speed power switching applications such as switching regulators, 12 AMPERES converters, solenoid and relay drivers. 100 VOLTS S
Otros transistores... MTP12N10E , MTP12N10L , MTP12N18 , MTP12N20 , MTP12P05 , MTP12P06 , MTP12P08 , MTP12P10 , STP80NF70 , MTP15N05 , MTP15N05E , MTP15N06 , MTP1N100 , MTP1N50 , MTP1N50E , MTP1N55 , MTP1N60 .
History: WSK180N04 | MTB340N11N6 | 2SJ358
History: WSK180N04 | MTB340N11N6 | 2SJ358
🌐 : EN ES РУ
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: AUB062N08BG | AUB060N08AG | AUB056N10 | AUB056N08BGL | AUB050N085 | AUB050N055 | AUB045N12 | AUB045N10BT | AUB039N10 | AUB034N10 | AUB033N08BG | AUB026N085 | AUA062N08BG | AUA060N08AG | AUA056N08BGL | AUA039N10
Popular searches
bu2508df | 2n2222a transistor equivalent | 2sc2509 | 2n1815 | 2sa1103 | 2sb435 | 2sc1096 | 2sc2058
