MTP12P10G Datasheet and Replacement
Type Designator: MTP12P10G
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 75 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 12 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 150 nS
Cossⓘ - Output Capacitance: 575 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.3 Ohm
Package: TO-220AB
MTP12P10G substitution
MTP12P10G Datasheet (PDF)
mtp12p10-d mtp12p10g.pdf
MTP12P10Preferred DevicePower MOSFET12 Amps, 100 VoltsP-Channel TO-220This Power MOSFET is designed for medium voltage, high speedhttp://onsemi.compower switching applications such as switching regulators, converters,solenoid and relay drivers.12 AMPERES, 100 VOLTSFeaturesRDS(on) = 300 mW Silicon Gate for Fast Switching Speeds - Switching Times SpecifiedP-Channela
mtp12p10.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTP12P10/DDesigner's Data SheetMTP12P10Power Field Effect TransistorPChannel EnhancementMode Silicon GateThis TMOS Power FET is designed for medium voltage, highTMOS POWER FETspeed power switching applications such as switching regulators,12 AMPERESconverters, solenoid and relay drivers.100 VOLTS S
mtp12p10rev1a.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTP12P10/DDesigner's Data SheetMTP12P10Power Field Effect TransistorPChannel EnhancementMode Silicon GateThis TMOS Power FET is designed for medium voltage, highTMOS POWER FETspeed power switching applications such as switching regulators,12 AMPERESconverters, solenoid and relay drivers.100 VOLTS S
Datasheet: MTP12N10E , MTP12N10L , MTP12N18 , MTP12N20 , MTP12P05 , MTP12P06 , MTP12P08 , MTP12P10 , 20N50 , MTP15N05 , MTP15N05E , MTP15N06 , MTP1N100 , MTP1N50 , MTP1N50E , MTP1N55 , MTP1N60 .
History: VBZMB7N65 | MTA90N03ZN3
Keywords - MTP12P10G MOSFET datasheet
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History: VBZMB7N65 | MTA90N03ZN3
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