MTP12P10G MOSFET. Datasheet pdf. Equivalent

   Type Designator: MTP12P10G
   Marking Code: MTP12P10
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 75 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
   |Id|ⓘ - Maximum Drain Current: 12 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 33 nC
   trⓘ - Rise Time: 150 nS
   Cossⓘ - Output Capacitance: 575 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.3 Ohm
   Package: TO-220AB

MTP12P10G Transistor Equivalent Substitute - MOSFET Cross-Reference Search

MTP12P10G Datasheet (PDF)

..1. Size:72K onsemi
mtp12p10-d mtp12p10g.pdf

MTP12P10Preferred DevicePower MOSFET12 Amps, 100 VoltsP-Channel TO-220This Power MOSFET is designed for medium voltage, high speedhttp://onsemi.compower switching applications such as switching regulators, converters,solenoid and relay drivers.12 AMPERES, 100 VOLTSFeaturesRDS(on) = 300 mW Silicon Gate for Fast Switching Speeds - Switching Times SpecifiedP-Channela

6.1. Size:164K motorola
mtp12p10.pdf

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTP12P10/DDesigner's Data SheetMTP12P10Power Field Effect TransistorPChannel EnhancementMode Silicon GateThis TMOS Power FET is designed for medium voltage, highTMOS POWER FETspeed power switching applications such as switching regulators,12 AMPERESconverters, solenoid and relay drivers.100 VOLTS S

6.2. Size:190K motorola
mtp12p10rev1a.pdf