MTP12P10G MOSFET Datasheet: P-Ch, 100V, 12A. Full specification with pinout and replacement list

MTP12P10G Specs and Replacement

Type Designator: MTP12P10G

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 75 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 12 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 150 nS

Cossⓘ - Output Capacitance: 575 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.3 Ohm

Package: TO-220AB

MTP12P10G substitution

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MTP12P10G datasheet

..1. Size:72K onsemi
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MTP12P10 Preferred Device Power MOSFET 12 Amps, 100 Volts P-Channel TO-220 This Power MOSFET is designed for medium voltage, high speed http //onsemi.com power switching applications such as switching regulators, converters, solenoid and relay drivers. 12 AMPERES, 100 VOLTS Features RDS(on) = 300 mW Silicon Gate for Fast Switching Speeds - Switching Times Specified P-Channel a... See More ⇒

6.1. Size:164K motorola
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MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP12P10/D Designer's Data Sheet MTP12P10 Power Field Effect Transistor P Channel Enhancement Mode Silicon Gate This TMOS Power FET is designed for medium voltage, high TMOS POWER FET speed power switching applications such as switching regulators, 12 AMPERES converters, solenoid and relay drivers. 100 VOLTS S... See More ⇒

6.2. Size:190K motorola
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