MTP1N60E MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: MTP1N60E
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 50 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 1 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 7.1 nC
   trⓘ - Tiempo de subida: 6.8 nS
   Cossⓘ - Capacitancia de salida: 27 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 8 Ohm
   Paquete / Cubierta: TO-220AB

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MTP1N60E Datasheet (PDF)

..1. Size:139K motorola
mtp1n60e.pdf

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTP1N60E/DDesigner's Data SheetMTP1N60ETMOS E-FET.Motorola Preferred DevicePower Field Effect TransistorNChannel EnhancementMode Silicon GateTMOS POWER FETThis high voltage MOSFET uses an advanced termination1.0 AMPERESscheme to provide enhanced voltageblocking capability without600 VOLTSdegra

0.1. Size:232K motorola
mtp1n60erev1x.pdf

7.1. Size:175K motorola
mtp1n60.pdf

9.1. Size:159K motorola
mtp1n50erev1x.pdf

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTP1N50E/DDesigner's Data SheetMTP1N50ETMOS E-FET.Motorola Preferred DevicePower Field Effect TransistorNChannel EnhancementMode Silicon GateTMOS POWER FETThis high voltage MOSFET uses an advanced termination1.0 AMPERESscheme to provide enhanced voltageblocking capability without500 VOLTSdegra

9.2. Size:112K motorola
mtp1n50e.pdf

9.3. Size:175K motorola
mtp1n100e.pdf

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTP1N100E/DDesigner's Data SheetMTP1N100ETMOS E-FET.Motorola Preferred DevicePower Field Effect TransistorNChannel EnhancementMode Silicon GateTMOS POWER FETThis high voltage MOSFET uses an advanced termination1.0 AMPERESscheme to provide enhanced voltageblocking capability without1000 VOLTSde

9.4. Size:141K motorola
mtp1n80e.pdf

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTP1N80E/DDesigner's Data SheetMTP1N80ETMOS E-FET.Motorola Preferred DevicePower Field Effect TransistorNChannel EnhancementMode Silicon GateTMOS POWER FETThis high voltage MOSFET uses an advanced termination1.0 AMPERESscheme to provide enhanced voltageblocking capability without800 VOLTSdegra

9.5. Size:203K motorola
mtp1n100erev2x.pdf

9.6. Size:56K motorola
mtp1n100 mtp1n55 mtp1n95 mtp20p06 mtp2955 mtp2n55 mtp2n60 mtp2n85 mtp2p45 mtp2p50 mtp3n100 mtp3n75 mtp3n80 mtp3n95 mtp3p25 mtp4n85.pdf

9.7. Size:221K motorola
mtp1n80erev0ax.pdf

9.8. Size:25K no
mtp1n50.pdf

PRODUCT SPECIFICATIONS SEMICONDUCTOR TECHNOLOGY, INC. 3131 S. E. JAY STREET, STUART, FL 34997 TYPE: MTP1N50 PH: (561) 283-4500 FAX: (561) 286-8914 Website: http://www.semi-tech-inc.com CASE OUTLINE: TO-220 HIGH VOLTAGE POWER MOSFET N-CHANNEL ABSOLUTE MAXIMUM RATING: Drain Source Voltage VDSS 500 Vdc Drain Gate Voltage VDGR 500 Vdc Drain Current Continuous ID 1.

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