MTP1N60E
MOSFET. Datasheet pdf. Equivalent
Type Designator: MTP1N60E
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 50
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 1
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 7.1
nC
trⓘ - Rise Time: 6.8
nS
Cossⓘ -
Output Capacitance: 27
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 8
Ohm
Package:
TO-220AB
MTP1N60E
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
MTP1N60E
Datasheet (PDF)
..1. Size:139K motorola
mtp1n60e.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTP1N60E/DDesigner's Data SheetMTP1N60ETMOS E-FET.Motorola Preferred DevicePower Field Effect TransistorNChannel EnhancementMode Silicon GateTMOS POWER FETThis high voltage MOSFET uses an advanced termination1.0 AMPERESscheme to provide enhanced voltageblocking capability without600 VOLTSdegra
0.1. Size:232K motorola
mtp1n60erev1x.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTP1N60E/DDesigner's Data SheetMTP1N60ETMOS E-FET.Motorola Preferred DevicePower Field Effect TransistorNChannel EnhancementMode Silicon GateTMOS POWER FETThis high voltage MOSFET uses an advanced termination1.0 AMPERESscheme to provide enhanced voltageblocking capability without600 VOLTSdegra
9.1. Size:159K motorola
mtp1n50erev1x.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTP1N50E/DDesigner's Data SheetMTP1N50ETMOS E-FET.Motorola Preferred DevicePower Field Effect TransistorNChannel EnhancementMode Silicon GateTMOS POWER FETThis high voltage MOSFET uses an advanced termination1.0 AMPERESscheme to provide enhanced voltageblocking capability without500 VOLTSdegra
9.2. Size:112K motorola
mtp1n50e.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTP1N50E/DDesigner's Data SheetMTP1N50ETMOS E-FET.Motorola Preferred DevicePower Field Effect TransistorNChannel EnhancementMode Silicon GateTMOS POWER FETThis high voltage MOSFET uses an advanced termination1.0 AMPERESscheme to provide enhanced voltageblocking capability without500 VOLTSdegra
9.3. Size:175K motorola
mtp1n100e.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTP1N100E/DDesigner's Data SheetMTP1N100ETMOS E-FET.Motorola Preferred DevicePower Field Effect TransistorNChannel EnhancementMode Silicon GateTMOS POWER FETThis high voltage MOSFET uses an advanced termination1.0 AMPERESscheme to provide enhanced voltageblocking capability without1000 VOLTSde
9.4. Size:141K motorola
mtp1n80e.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTP1N80E/DDesigner's Data SheetMTP1N80ETMOS E-FET.Motorola Preferred DevicePower Field Effect TransistorNChannel EnhancementMode Silicon GateTMOS POWER FETThis high voltage MOSFET uses an advanced termination1.0 AMPERESscheme to provide enhanced voltageblocking capability without800 VOLTSdegra
9.5. Size:203K motorola
mtp1n100erev2x.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTP1N100E/DDesigner's Data SheetMTP1N100ETMOS E-FET.Motorola Preferred DevicePower Field Effect TransistorNChannel EnhancementMode Silicon GateTMOS POWER FETThis high voltage MOSFET uses an advanced termination1.0 AMPERESscheme to provide enhanced voltageblocking capability without1000 VOLTSde
9.7. Size:221K motorola
mtp1n80erev0ax.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTP1N80E/DDesigner's Data SheetMTP1N80ETMOS E-FET.Motorola Preferred DevicePower Field Effect TransistorNChannel EnhancementMode Silicon GateTMOS POWER FETThis high voltage MOSFET uses an advanced termination1.0 AMPERESscheme to provide enhanced voltageblocking capability without800 VOLTSdegra
9.8. Size:25K no
mtp1n50.pdf
PRODUCT SPECIFICATIONS SEMICONDUCTOR TECHNOLOGY, INC. 3131 S. E. JAY STREET, STUART, FL 34997 TYPE: MTP1N50 PH: (561) 283-4500 FAX: (561) 286-8914 Website: http://www.semi-tech-inc.com CASE OUTLINE: TO-220 HIGH VOLTAGE POWER MOSFET N-CHANNEL ABSOLUTE MAXIMUM RATING: Drain Source Voltage VDSS 500 Vdc Drain Gate Voltage VDGR 500 Vdc Drain Current Continuous ID 1.
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