MTP1N60E MOSFET Datasheet: N-Ch, 600V, 1A. Full specification with pinout and replacement list

MTP1N60E Specs and Replacement

Type Designator: MTP1N60E

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 50 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 1 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 6.8 nS

Cossⓘ - Output Capacitance: 27 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 8 Ohm

Package: TO-220AB

MTP1N60E substitution

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MTP1N60E datasheet

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MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP1N60E/D Designer's Data Sheet MTP1N60E TMOS E-FET. Motorola Preferred Device Power Field Effect Transistor N Channel Enhancement Mode Silicon Gate TMOS POWER FET This high voltage MOSFET uses an advanced termination 1.0 AMPERES scheme to provide enhanced voltage blocking capability without 600 VOLTS degra... See More ⇒

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MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP1N50E/D Designer's Data Sheet MTP1N50E TMOS E-FET. Motorola Preferred Device Power Field Effect Transistor N Channel Enhancement Mode Silicon Gate TMOS POWER FET This high voltage MOSFET uses an advanced termination 1.0 AMPERES scheme to provide enhanced voltage blocking capability without 500 VOLTS degra... See More ⇒