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MTP2N55 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: MTP2N55
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 75 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 550 V
   |Id|ⓘ - Corriente continua de drenaje: 2 A

CARACTERÍSTICAS ELÉCTRICAS


   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 6 Ohm
   Paquete / Cubierta: TO-220AB

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MTP2N55 Datasheet (PDF)

 8.1. Size:244K  motorola
mtp2n50e.pdf

MTP2N55
MTP2N55

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTP2N50E/DDesigner's Data SheetMTP2N50ETMOS E-FET.Motorola Preferred DevicePower Field Effect TransistorNChannel EnhancementMode Silicon GateTMOS POWER FETThis high voltage MOSFET uses an advanced termination2.0 AMPERESscheme to provide enhanced voltageblocking capability without500 VOLTSdegra

 8.2. Size:26K  no
mtp2n50e.pdf

MTP2N55
MTP2N55

PRODUCT SPECIFICATIONS SEMICONDUCTOR TECHNOLOGY, INC. 3131 S. E. JAY STREET, STUART, FL 34997 TYPE: MTP2N50E PH: (561) 283-4500 FAX: (561) 286-8914 Website: http://www.semi-tech-inc.com CASE OUTLINE: TO-220 HIGH VOLTAGE POWER MOSFET N-CHANNEL ABSOLUTE MAXIMUM RATING: Drain Source Voltage VDSS 500 Vdc Drain Gate Voltage VDGR 500 Vdc Drain Current Continuous ID 2

 8.3. Size:204K  inchange semiconductor
mtp2n50.pdf

MTP2N55
MTP2N55

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor MTP2N50FEATURESWith low gate drive requirementsEasy to drive100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 500 VDSSV Gate-S

Otros transistores... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

 

 
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