MTP2N55 MOSFET. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

MTP2N55 datasheet

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mtp1n100 mtp1n55 mtp1n95 mtp20p06 mtp2955 mtp2n55 mtp2n60 mtp2n85 mtp2p45 mtp2p50 mtp3n100 mtp3n75 mtp3n80 mtp3n95 mtp3p25 mtp4n85.pdf pdf_icon

8.1. Size:244K motorola
mtp2n50e.pdf pdf_icon

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP2N50E/D Designer's Data Sheet MTP2N50E TMOS E-FET. Motorola Preferred Device Power Field Effect Transistor N Channel Enhancement Mode Silicon Gate TMOS POWER FET This high voltage MOSFET uses an advanced termination 2.0 AMPERES scheme to provide enhanced voltage blocking capability without 500 VOLTS degra

8.2. Size:26K no
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PRODUCT SPECIFICATIONS SEMICONDUCTOR TECHNOLOGY, INC. 3131 S. E. JAY STREET, STUART, FL 34997 TYPE MTP2N50E PH (561) 283-4500 FAX (561) 286-8914 Website http //www.semi-tech-inc.com CASE OUTLINE TO-220 HIGH VOLTAGE POWER MOSFET N-CHANNEL ABSOLUTE MAXIMUM RATING Drain Source Voltage VDSS 500 Vdc Drain Gate Voltage VDGR 500 Vdc Drain Current Continuous ID 2

8.3. Size:204K inchange semiconductor
mtp2n50.pdf pdf_icon

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor MTP2N50 FEATURES With low gate drive requirements Easy to drive 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 500 V DSS V Gate-S

Otros transistores... MTP2955V , MTP2N18 , MTP2N20 , MTP2N35 , MTP2N40 , MTP2N40E , MTP2N45 , MTP2N50E , 7N60 , MTP2N60 , MTP2N60E , MTP2N80 , MTP2N85 , MTP2N90 , MTP2P45 , MTP2P50 , MTP2P50EG .