MTP2N55 Specs and Replacement
Type Designator: MTP2N55
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 75 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 550 V
|Id| ⓘ - Maximum Drain Current: 2 A
Electrical Characteristics
RDSonⓘ - Maximum Drain-Source On-State Resistance: 6 Ohm
Package: TO-220AB
MTP2N55 substitution
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MTP2N55 datasheet
mtp1n100 mtp1n55 mtp1n95 mtp20p06 mtp2955 mtp2n55 mtp2n60 mtp2n85 mtp2p45 mtp2p50 mtp3n100 mtp3n75 mtp3n80 mtp3n95 mtp3p25 mtp4n85.pdf
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mtp2n50e.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP2N50E/D Designer's Data Sheet MTP2N50E TMOS E-FET. Motorola Preferred Device Power Field Effect Transistor N Channel Enhancement Mode Silicon Gate TMOS POWER FET This high voltage MOSFET uses an advanced termination 2.0 AMPERES scheme to provide enhanced voltage blocking capability without 500 VOLTS degra... See More ⇒
mtp2n50e.pdf
PRODUCT SPECIFICATIONS SEMICONDUCTOR TECHNOLOGY, INC. 3131 S. E. JAY STREET, STUART, FL 34997 TYPE MTP2N50E PH (561) 283-4500 FAX (561) 286-8914 Website http //www.semi-tech-inc.com CASE OUTLINE TO-220 HIGH VOLTAGE POWER MOSFET N-CHANNEL ABSOLUTE MAXIMUM RATING Drain Source Voltage VDSS 500 Vdc Drain Gate Voltage VDGR 500 Vdc Drain Current Continuous ID 2... See More ⇒
mtp2n50.pdf
INCHANGE Semiconductor Isc N-Channel MOSFET Transistor MTP2N50 FEATURES With low gate drive requirements Easy to drive 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 500 V DSS V Gate-S... See More ⇒
Detailed specifications: MTP2955V, MTP2N18, MTP2N20, MTP2N35, MTP2N40, MTP2N40E, MTP2N45, MTP2N50E, 7N60, MTP2N60, MTP2N60E, MTP2N80, MTP2N85, MTP2N90, MTP2P45, MTP2P50, MTP2P50EG
Keywords - MTP2N55 MOSFET specs
MTP2N55 cross reference
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MTP2N55 substitution
MTP2N55 replacement
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History: MTB030N10RQ8 | AOD474
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