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MTP3055V MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MTP3055V

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 48 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 12 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 34 nS

Cossⓘ - Capacitancia de salida: 130 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.15 Ohm

Encapsulados: TO-220AB

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MTP3055V datasheet

 ..1. Size:142K  motorola
mtp3055v.pdf pdf_icon

MTP3055V

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP3055V/D Designer's Data Sheet MTP3055V TMOS V Motorola Preferred Device Power Field Effect Transistor N Channel Enhancement Mode Silicon Gate TMOS POWER FET TMOS V is a new technology designed to achieve an on resis- 12 AMPERES tance area product about one half that of standard MOSFETs. This 60 VOLTS

 ..2. Size:202K  onsemi
mtp3055v.pdf pdf_icon

MTP3055V

MTP3055V Preferred Device Power MOSFET 12 Amps, 60 Volts N-Channel TO-220 This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high http //onsemi.com speed switching applications in power supplies, converters and power motor controls, these devices are particularly well suited for bridge 12 AMPERES circuits where dio

 0.1. Size:161K  motorola
mtp3055vlrev2a.pdf pdf_icon

MTP3055V

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP3055VL/D Designer's Data Sheet MTP3055VL TMOS V Motorola Preferred Device Power Field Effect Transistor N Channel Enhancement Mode Silicon Gate TMOS POWER FET TMOS V is a new technology designed to achieve an on resis- 12 AMPERES tance area product about one half that of standard MOSFETs. This 60 VOLTS

 0.2. Size:144K  motorola
mtp3055vl.pdf pdf_icon

MTP3055V

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP3055VL/D Designer's Data Sheet MTP3055VL TMOS V Motorola Preferred Device Power Field Effect Transistor N Channel Enhancement Mode Silicon Gate TMOS POWER FET TMOS V is a new technology designed to achieve an on resis- 12 AMPERES tance area product about one half that of standard MOSFETs. This 60 VOLTS

Otros transistores... MTP2N60 , MTP2N60E , MTP2N80 , MTP2N85 , MTP2N90 , MTP2P45 , MTP2P50 , MTP2P50EG , EMB04N03H , MTP30P06V , MTP36N06V , MTP3N100 , MTP3N120E , MTP3N35 , MTP3N40 , MTP3N55 , MTP3N75 .

 

 

 

 

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