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MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP3055V/D Designer's Data Sheet MTP3055V TMOS V Motorola Preferred Device Power Field Effect Transistor N Channel Enhancement Mode Silicon Gate TMOS POWER FET TMOS V is a new technology designed to achieve an on resis- 12 AMPERES tance area product about one half that of standard MOSFETs. This 60 VOLTS... See More ⇒

MTP3055V Preferred Device Power MOSFET 12 Amps, 60 Volts N-Channel TO-220 This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high http //onsemi.com speed switching applications in power supplies, converters and power motor controls, these devices are particularly well suited for bridge 12 AMPERES circuits where dio... See More ⇒

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP3055VL/D Designer's Data Sheet MTP3055VL TMOS V Motorola Preferred Device Power Field Effect Transistor N Channel Enhancement Mode Silicon Gate TMOS POWER FET TMOS V is a new technology designed to achieve an on resis- 12 AMPERES tance area product about one half that of standard MOSFETs. This 60 VOLTS ... See More ⇒

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP3055VL/D Designer's Data Sheet MTP3055VL TMOS V Motorola Preferred Device Power Field Effect Transistor N Channel Enhancement Mode Silicon Gate TMOS POWER FET TMOS V is a new technology designed to achieve an on resis- 12 AMPERES tance area product about one half that of standard MOSFETs. This 60 VOLTS ... See More ⇒

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP3055V/D Designer's Data Sheet MTP3055V TMOS V Motorola Preferred Device Power Field Effect Transistor N Channel Enhancement Mode Silicon Gate TMOS POWER FET TMOS V is a new technology designed to achieve an on resis- 12 AMPERES tance area product about one half that of standard MOSFETs. This 60 VOLTS... See More ⇒

June 2000 DISTRIBUTION GROUP* MTP3055VL N-Channel Logic Level Enhancement Mode Field Effect Transistor Features General Description 12 A, 60 V. RDS(ON) = 0.18 @ VGS = 5 V This N-Channel Logic Level MOSFET has been designed specifically for low voltage, high speed switching Critical DC electrical parameters specified at elevated applications i.e. power supplies and power mo... See More ⇒