MTP3N95 Todos los transistores

 ..1. Size:56K  motorola
 mtp1n100 mtp1n55 mtp1n95 mtp20p06 mtp2955 mtp2n55 mtp2n60 mtp2n85 mtp2p45 mtp2p50 mtp3n100 mtp3n75 mtp3n80 mtp3n95 mtp3p25 mtp4n85.pdf

 9.1. Size:179K  motorola
 mtp3n100e.pdf

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP3N100E/D Designer's Data Sheet MTP3N100E TMOS E-FET. Motorola Preferred Device Power Field Effect Transistor N Channel Enhancement Mode Silicon Gate TMOS POWER FET This high voltage MOSFET uses an advanced termination 3.0 AMPERES scheme to provide enhanced voltage blocking capability without 1000 VOLTS de

 9.2. Size:215K  motorola
 mtp3n50e.pdf

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP3N50E/D Designer's Data Sheet MTP3N50E TMOS E-FET. Motorola Preferred Device High Energy Power FET N Channel Enhancement Mode Silicon Gate TMOS POWER FET This advanced high voltage TMOS E FET is designed to 3.0 AMPERES withstand high energy in the avalanche mode and switch efficiently. 500 VOLTS This new

 9.3. Size:181K  motorola
 mtp3n25e.pdf

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP3N25E/D Designer's Data Sheet MTP3N25E TMOS E-FET. Motorola Preferred Device Power Field Effect Transistor N Channel Enhancement Mode Silicon Gate TMOS POWER FET This advanced TMOS E FET is designed to withstand high 3.0 AMPERES energy in the avalanche and commutation modes. The new energy 250 VOLTS effic

 9.4. Size:180K  motorola
 mtp3n75 mtp3n80 mtm3n75 mtm3n80.pdf

 9.5. Size:188K  motorola
 mtp3n60e.pdf

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP3N60E/D Designer's Data Sheet MTP3N60E TMOS E-FET. Motorola Preferred Device High Energy Power FET N Channel Enhancement Mode Silicon Gate TMOS POWER FET This advanced high voltage TMOS E FET is designed to 3.0 AMPERES withstand high energy in the avalanche mode and switch efficiently. 600 VOLTS This new

 9.6. Size:217K  motorola
 mtp3n120e.pdf

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP3N120E/D Designer's Data Sheet MTP3N120E TMOS E-FET. Motorola Preferred Device Power Field Effect Transistor N Channel Enhancement Mode Silicon Gate TMOS POWER FET This advanced high voltage TMOS E FET is designed to 3.0 AMPERES withstand high energy in the avalanche mode and switch efficiently. 1200 VOLTS

 9.7. Size:251K  motorola
 mtp3n50erev1a.pdf

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP3N50E/D Designer's Data Sheet MTP3N50E TMOS E-FET. Motorola Preferred Device High Energy Power FET N Channel Enhancement Mode Silicon Gate TMOS POWER FET This advanced high voltage TMOS E FET is designed to 3.0 AMPERES withstand high energy in the avalanche mode and switch efficiently. 500 VOLTS This new

 9.8. Size:208K  motorola
 mtp3n25erev2.pdf

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP3N25E/D Designer's Data Sheet MTP3N25E TMOS E-FET. Motorola Preferred Device Power Field Effect Transistor N Channel Enhancement Mode Silicon Gate TMOS POWER FET This advanced TMOS E FET is designed to withstand high 3.0 AMPERES energy in the avalanche and commutation modes. The new energy 250 VOLTS effic

 9.9. Size:183K  motorola
 mtp3n60erev2.pdf

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP3N60E/D Designer's Data Sheet MTP3N60E TMOS E-FET. Motorola Preferred Device High Energy Power FET N Channel Enhancement Mode Silicon Gate TMOS POWER FET This advanced high voltage TMOS E FET is designed to 3.0 AMPERES withstand high energy in the avalanche mode and switch efficiently. 600 VOLTS This new

 9.10. Size:163K  motorola
 mtp3n45 mtp3n50.pdf

 9.11. Size:252K  motorola
 mtp3n120e-.pdf

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP3N120E/D Designer's Data Sheet MTP3N120E TMOS E-FET. Motorola Preferred Device Power Field Effect Transistor N Channel Enhancement Mode Silicon Gate TMOS POWER FET This advanced high voltage TMOS E FET is designed to 3.0 AMPERES withstand high energy in the avalanche mode and switch efficiently. 1200 VOLTS

 9.12. Size:206K  motorola
 mtp3n100e-.pdf

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP3N100E/D Designer's Data Sheet MTP3N100E TMOS E-FET. Motorola Preferred Device Power Field Effect Transistor N Channel Enhancement Mode Silicon Gate TMOS POWER FET This high voltage MOSFET uses an advanced termination 3.0 AMPERES scheme to provide enhanced voltage blocking capability without 1000 VOLTS de

 9.13. Size:200K  st
 mtp3n60.pdf

MTP3N60 MTP3N60FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V R I DSS DS(on) D MTP3N60 600 V

 9.14. Size:433K  st
 mtp3n60-fi.pdf

 9.15. Size:164K  fairchild semi
 mtp3n35 mtp3n40.pdf

 9.16. Size:176K  onsemi
 mtp3n120e.pdf

MTP3N120E Designer s Data Sheet TMOS E-FET. Power Field Effect Transistor N-Channel Enhancement-Mode Silicon http //onsemi.com Gate This advanced high-voltage TMOS E-FET is designed to withstand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode with fast TO-220AB recovery time. Designed for high voltage, hi

 9.17. Size:27K  no
 mtp3n55.pdf

PRODUCT SPECIFICATIONS SEMICONDUCTOR TECHNOLOGY, INC. 3131 S. E. JAY STREET, STUART, FL 34997 TYPE MTP3N55 PH (561) 283-4500 FAX (561) 286-8914 Website http //www.semi-tech-inc.com CASE OUTLINE TO-220 HIGH VOLTAGE POWER MOSFET N-CHANNEL ABSOLUTE MAXIMUM RATING Drain Source Voltage VDSS 550 Vdc Drain Gate Voltage VDGR 550 Vdc Drain Current Continuous ID 3

 9.18. Size:204K  inchange semiconductor
 mtp3n50e.pdf

INCHANGE Semiconductor isc N-Channel MOSFET Transistor MTP3N50E FEATURES With TO-220 packaging High speed switching Very high commutation ruggedness Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS PFC stages Popular AC-DC applications Power supply Switching applications ABS