MTP3N95 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: MTP3N95
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 75 W
Предельно допустимое напряжение сток-исток |Uds|: 950 V
Максимально допустимый постоянный ток стока |Id|: 3 A
Сопротивление сток-исток открытого транзистора (Rds): 4 Ohm
Тип корпуса: TO-220AB
MTP3N95 Datasheet (PDF)
mtp1n100 mtp1n55 mtp1n95 mtp20p06 mtp2955 mtp2n55 mtp2n60 mtp2n85 mtp2p45 mtp2p50 mtp3n100 mtp3n75 mtp3n80 mtp3n95 mtp3p25 mtp4n85.pdf
mtp3n100e.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTP3N100E/DDesigner's Data SheetMTP3N100ETMOS E-FET.Motorola Preferred DevicePower Field Effect TransistorNChannel EnhancementMode Silicon GateTMOS POWER FETThis high voltage MOSFET uses an advanced termination3.0 AMPERESscheme to provide enhanced voltageblocking capability without1000 VOLTSde
mtp3n50e.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTP3N50E/DDesigner's Data SheetMTP3N50ETMOS E-FET.Motorola Preferred DeviceHigh Energy Power FETNChannel EnhancementMode Silicon GateTMOS POWER FETThis advanced high voltage TMOS EFET is designed to3.0 AMPERESwithstand high energy in the avalanche mode and switch efficiently.500 VOLTSThis new
mtp3n25e.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTP3N25E/DDesigner's Data SheetMTP3N25ETMOS E-FET.Motorola Preferred DevicePower Field Effect TransistorNChannel EnhancementMode Silicon GateTMOS POWER FETThis advanced TMOS EFET is designed to withstand high3.0 AMPERESenergy in the avalanche and commutation modes. The new energy250 VOLTSeffic
mtp3n60e.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTP3N60E/DDesigner's Data SheetMTP3N60ETMOS E-FET.Motorola Preferred DeviceHigh Energy Power FETNChannel EnhancementMode Silicon GateTMOS POWER FETThis advanced high voltage TMOS EFET is designed to3.0 AMPERESwithstand high energy in the avalanche mode and switch efficiently.600 VOLTSThis new
mtp3n120e.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTP3N120E/DDesigner's Data SheetMTP3N120ETMOS E-FET.Motorola Preferred DevicePower Field Effect TransistorNChannel EnhancementMode Silicon GateTMOS POWER FETThis advanced highvoltage TMOS EFET is designed to3.0 AMPERESwithstand high energy in the avalanche mode and switch efficiently.1200 VOLTS
mtp3n50erev1a.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTP3N50E/DDesigner's Data SheetMTP3N50ETMOS E-FET.Motorola Preferred DeviceHigh Energy Power FETNChannel EnhancementMode Silicon GateTMOS POWER FETThis advanced high voltage TMOS EFET is designed to3.0 AMPERESwithstand high energy in the avalanche mode and switch efficiently.500 VOLTSThis new
mtp3n25erev2.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTP3N25E/DDesigner's Data SheetMTP3N25ETMOS E-FET.Motorola Preferred DevicePower Field Effect TransistorNChannel EnhancementMode Silicon GateTMOS POWER FETThis advanced TMOS EFET is designed to withstand high3.0 AMPERESenergy in the avalanche and commutation modes. The new energy250 VOLTSeffic
mtp3n60erev2.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTP3N60E/DDesigner's Data SheetMTP3N60ETMOS E-FET.Motorola Preferred DeviceHigh Energy Power FETNChannel EnhancementMode Silicon GateTMOS POWER FETThis advanced high voltage TMOS EFET is designed to3.0 AMPERESwithstand high energy in the avalanche mode and switch efficiently.600 VOLTSThis new
mtp3n120e-.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTP3N120E/DDesigner's Data SheetMTP3N120ETMOS E-FET.Motorola Preferred DevicePower Field Effect TransistorNChannel EnhancementMode Silicon GateTMOS POWER FETThis advanced highvoltage TMOS EFET is designed to3.0 AMPERESwithstand high energy in the avalanche mode and switch efficiently.1200 VOLTS
mtp3n100e-.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTP3N100E/DDesigner's Data SheetMTP3N100ETMOS E-FET.Motorola Preferred DevicePower Field Effect TransistorNChannel EnhancementMode Silicon GateTMOS POWER FETThis high voltage MOSFET uses an advanced termination3.0 AMPERESscheme to provide enhanced voltageblocking capability without1000 VOLTSde
mtp3n60.pdf
MTP3N60MTP3N60FIN - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORTYPE V R IDSS DS(on) DMTP3N60 600 V
mtp3n120e.pdf
MTP3N120EDesigners Data SheetTMOS E-FET.Power Field EffectTransistorN-Channel Enhancement-Mode Siliconhttp://onsemi.comGateThis advanced high-voltage TMOS E-FET is designed to withstandhigh energy in the avalanche mode and switch efficiently. This newhigh energy device also offers a drain-to-source diode with fastTO-220ABrecovery time. Designed for high voltage, hi
mtp3n55.pdf
PRODUCT SPECIFICATIONS SEMICONDUCTOR TECHNOLOGY, INC. 3131 S. E. JAY STREET, STUART, FL 34997 TYPE: MTP3N55 PH: (561) 283-4500 FAX: (561) 286-8914 Website: http://www.semi-tech-inc.com CASE OUTLINE: TO-220 HIGH VOLTAGE POWER MOSFET N-CHANNEL ABSOLUTE MAXIMUM RATING: Drain Source Voltage VDSS 550 Vdc Drain Gate Voltage VDGR 550 Vdc Drain Current Continuous ID 3
mtp3n50e.pdf
INCHANGE Semiconductorisc N-Channel MOSFET Transistor MTP3N50EFEATURESWith TO-220 packagingHigh speed switchingVery high commutation ruggednessEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPFC stagesPopular AC-DC applicationsPower supplySwitching applicationsABS
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