MTP4N90 Todos los transistores

 

MTP4N90 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: MTP4N90
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 75 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 900 V
   |Id|ⓘ - Corriente continua de drenaje: 4 A

CARACTERÍSTICAS ELÉCTRICAS


   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 4 Ohm
   Paquete / Cubierta: TO-220AB

 Búsqueda de reemplazo de MOSFET MTP4N90

 

Principales características: MTP4N90

 9.1. Size:254K  motorola
 mtp4n50erev1a.pdf pdf_icon

MTP4N90

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP4N50E/D Designer's Data Sheet MTP4N50E TMOS E-FET. Motorola Preferred Device High Energy Power FET N Channel Enhancement Mode Silicon Gate TMOS POWER FET This advanced high voltage TMOS E FET is designed to 4.0 AMPERES withstand high energy in the avalanche mode and switch efficiently. 500 VOLTS This new

 9.2. Size:245K  motorola
 mtp4n80e.pdf pdf_icon

MTP4N90

MTP4N80 PCB 24 MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP4N80E/D Designer's Data Sheet MTP4N80E TMOS E-FET. Motorola Preferred Device Power Field Effect Transistor N Channel Enhancement Mode Silicon Gate TMOS POWER FET This high voltage MOSFET uses an advanced termination 4.0 AMPERES s

 9.3. Size:138K  motorola
 mtp4n40e.pdf pdf_icon

MTP4N90

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP4N40E/D Designer's Data Sheet MTP4N40E TMOS E-FET. Motorola Preferred Device Power Field Effect Transistor N Channel Enhancement Mode Silicon Gate TMOS POWER FET This high voltage MOSFET uses an advanced termination 4.0 AMPERES scheme to provide enhanced voltage blocking capability without 400 VOLTS degra

 9.4. Size:217K  motorola
 mtp4n50e.pdf pdf_icon

MTP4N90

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP4N50E/D Designer's Data Sheet MTP4N50E TMOS E-FET. Motorola Preferred Device High Energy Power FET N Channel Enhancement Mode Silicon Gate TMOS POWER FET This advanced high voltage TMOS E FET is designed to 4.0 AMPERES withstand high energy in the avalanche mode and switch efficiently. 500 VOLTS This new

MOSTRAR MÁS

Otros transistores... MTP4N08 , MTP4N10 , MTP4N40E , MTP4N45 , MTP4N50 , MTP4N60 , MTP4N80E , MTP4N85 , IRF1404 , MTP50N06V , MTP50P03HDLG , MTP5N05 , MTP5N06 , MTP5N35 , MTP5N40 , MTP5N40E , MTP5N60 .

History: IPA60R180P7S | PSMN6R4-30MLD

 

 
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