MTP4N90 Todos los transistores

 

MTP4N90 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: MTP4N90
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 75 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 900 V
   |Id|ⓘ - Corriente continua de drenaje: 4 A

CARACTERÍSTICAS ELÉCTRICAS


   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 4 Ohm
   Paquete / Cubierta: TO-220AB
     - Selección de transistores por parámetros

 

MTP4N90 Datasheet (PDF)

 9.1. Size:254K  motorola
 mtp4n50erev1a.pdf pdf_icon

MTP4N90

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTP4N50E/DDesigner's Data SheetMTP4N50ETMOS E-FET.Motorola Preferred DeviceHigh Energy Power FETNChannel EnhancementMode Silicon GateTMOS POWER FETThis advanced high voltage TMOS EFET is designed to4.0 AMPERESwithstand high energy in the avalanche mode and switch efficiently.500 VOLTSThis new

 9.2. Size:245K  motorola
 mtp4n80e.pdf pdf_icon

MTP4N90

MTP4N80 PCB24MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTP4N80E/DDesigner's Data SheetMTP4N80ETMOS E-FET.Motorola Preferred DevicePower Field Effect TransistorNChannel EnhancementMode Silicon GateTMOS POWER FETThis high voltage MOSFET uses an advanced termination4.0 AMPERESs

 9.3. Size:138K  motorola
 mtp4n40e.pdf pdf_icon

MTP4N90

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTP4N40E/DDesigner's Data SheetMTP4N40ETMOS E-FET.Motorola Preferred DevicePower Field Effect TransistorNChannel EnhancementMode Silicon GateTMOS POWER FETThis high voltage MOSFET uses an advanced termination4.0 AMPERESscheme to provide enhanced voltageblocking capability without400 VOLTSdegra

 9.4. Size:217K  motorola
 mtp4n50e.pdf pdf_icon

MTP4N90

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTP4N50E/DDesigner's Data SheetMTP4N50ETMOS E-FET.Motorola Preferred DeviceHigh Energy Power FETNChannel EnhancementMode Silicon GateTMOS POWER FETThis advanced high voltage TMOS EFET is designed to4.0 AMPERESwithstand high energy in the avalanche mode and switch efficiently.500 VOLTSThis new

MOSTRAR MÁS

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: RQA0010VXDQS | WPM4801 | FMH47N60S1 | YJP150N06AQ | UT20N03 | FDMS3660AS | S68N08ZRN

 

 
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