MTP50P03HDLG Todos los transistores

 

MTP50P03HDLG MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: MTP50P03HDLG
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 125 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 15 V
   |Id|ⓘ - Corriente continua de drenaje: 50 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 340 nS
   Cossⓘ - Capacitancia de salida: 1550 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.025 Ohm
   Paquete / Cubierta: TO-220AB
 

 Búsqueda de reemplazo de MTP50P03HDLG MOSFET

   - Selección ⓘ de transistores por parámetros

 

MTP50P03HDLG Datasheet (PDF)

 ..1. Size:85K  onsemi
 mtp50p03hdl-d mtp50p03hdlg.pdf pdf_icon

MTP50P03HDLG

MTP50P03HDLPreferred DevicePower MOSFET50 Amps, 30 Volts, Logic LevelP-Channel TO-220This Power MOSFET is designed to withstand high energy in theavalanche and commutation modes. The energy efficient design alsohttp://onsemi.comoffers a drain-to-source diode with a fast recovery time. Designed forlow voltage, high speed switching applications in power supplies,50 AMPERES, 30

 3.1. Size:136K  motorola
 mtp50p03hdl.pdf pdf_icon

MTP50P03HDLG

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTP50P03HDL/DDesigner's Data SheetMTP50P03HDLHDTMOS E-FET.Motorola Preferred DevicePower Field Effect TransistorPChannel EnhancementMode Silicon GateTMOS POWER FETLOGIC LEVELThis advanced highcell density HDTMOS power FET is50 AMPERESdesigned to withstand high energy in the avalanche and commuta

 3.2. Size:131K  motorola
 mtp50p03hdlrev2.pdf pdf_icon

MTP50P03HDLG

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTP50P03HDL/DDesigner's Data SheetMTP50P03HDLHDTMOS E-FET.Motorola Preferred DevicePower Field Effect TransistorPChannel EnhancementMode Silicon GateTMOS POWER FETLOGIC LEVELThis advanced highcell density HDTMOS power FET is50 AMPERESdesigned to withstand high energy in the avalanche and commuta

 4.1. Size:183K  motorola
 mtp50p03hd.pdf pdf_icon

MTP50P03HDLG

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTP50P03HDL/DDesigner's Data SheetMTP50P03HDLHDTMOS E-FET.Motorola Preferred DevicePower Field Effect TransistorPChannel EnhancementMode Silicon GateTMOS POWER FETLOGIC LEVELThis advanced highcell density HDTMOS power FET is50 AMPERESdesigned to withstand high energy in the avalanche and commuta

MOSTRAR MÁS

Otros transistores... MTP4N40E , MTP4N45 , MTP4N50 , MTP4N60 , MTP4N80E , MTP4N85 , MTP4N90 , MTP50N06V , IRF640N , MTP5N05 , MTP5N06 , MTP5N35 , MTP5N40 , MTP5N40E , MTP5N60 , MTP5P18 , MTP5P20 .

History: VS3640DE | SSF2316E

 

 
Back to Top

 


 
.