MTP50P03HDLG Todos los transistores

 

MTP50P03HDLG MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: MTP50P03HDLG
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 125 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 15 V
   |Id|ⓘ - Corriente continua de drenaje: 50 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 340 nS
   Cossⓘ - Capacitancia de salida: 1550 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.025 Ohm
   Paquete / Cubierta: TO-220AB

 Búsqueda de reemplazo de MOSFET MTP50P03HDLG

 

Principales características: MTP50P03HDLG

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MTP50P03HDLG

MTP50P03HDL Preferred Device Power MOSFET 50 Amps, 30 Volts, Logic Level P-Channel TO-220 This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The energy efficient design also http //onsemi.com offers a drain-to-source diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies, 50 AMPERES, 30

 3.1. Size:136K  motorola
 mtp50p03hdl.pdf pdf_icon

MTP50P03HDLG

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP50P03HDL/D Designer's Data Sheet MTP50P03HDL HDTMOS E-FET. Motorola Preferred Device Power Field Effect Transistor P Channel Enhancement Mode Silicon Gate TMOS POWER FET LOGIC LEVEL This advanced high cell density HDTMOS power FET is 50 AMPERES designed to withstand high energy in the avalanche and commuta

 3.2. Size:131K  motorola
 mtp50p03hdlrev2.pdf pdf_icon

MTP50P03HDLG

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP50P03HDL/D Designer's Data Sheet MTP50P03HDL HDTMOS E-FET. Motorola Preferred Device Power Field Effect Transistor P Channel Enhancement Mode Silicon Gate TMOS POWER FET LOGIC LEVEL This advanced high cell density HDTMOS power FET is 50 AMPERES designed to withstand high energy in the avalanche and commuta

 4.1. Size:183K  motorola
 mtp50p03hd.pdf pdf_icon

MTP50P03HDLG

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP50P03HDL/D Designer's Data Sheet MTP50P03HDL HDTMOS E-FET. Motorola Preferred Device Power Field Effect Transistor P Channel Enhancement Mode Silicon Gate TMOS POWER FET LOGIC LEVEL This advanced high cell density HDTMOS power FET is 50 AMPERES designed to withstand high energy in the avalanche and commuta

MOSTRAR MÁS

Otros transistores... MTP4N40E , MTP4N45 , MTP4N50 , MTP4N60 , MTP4N80E , MTP4N85 , MTP4N90 , MTP50N06V , IRFB4110 , MTP5N05 , MTP5N06 , MTP5N35 , MTP5N40 , MTP5N40E , MTP5N60 , MTP5P18 , MTP5P20 .

History: F80N06 | MTP8N20 | ZVN4306ASTZ | ZVN4306AVSTOA | 3N70L-TN3-R | PSMNR90-30BL | TIS73

 

 
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