MTP50P03HDLG Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MTP50P03HDLG  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 125 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 15 V

|Id|ⓘ - Corriente continua de drenaje: 50 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 340 nS

Cossⓘ - Capacitancia de salida: 1550 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.025 Ohm

Encapsulados: TO-220AB

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MTP50P03HDLG datasheet

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MTP50P03HDLG

MTP50P03HDL Preferred Device Power MOSFET 50 Amps, 30 Volts, Logic Level P-Channel TO-220 This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The energy efficient design also http //onsemi.com offers a drain-to-source diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies, 50 AMPERES, 30

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MTP50P03HDLG

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP50P03HDL/D Designer's Data Sheet MTP50P03HDL HDTMOS E-FET. Motorola Preferred Device Power Field Effect Transistor P Channel Enhancement Mode Silicon Gate TMOS POWER FET LOGIC LEVEL This advanced high cell density HDTMOS power FET is 50 AMPERES designed to withstand high energy in the avalanche and commuta

 3.2. Size:131K  motorola
 mtp50p03hdlrev2.pdf pdf_icon

MTP50P03HDLG

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP50P03HDL/D Designer's Data Sheet MTP50P03HDL HDTMOS E-FET. Motorola Preferred Device Power Field Effect Transistor P Channel Enhancement Mode Silicon Gate TMOS POWER FET LOGIC LEVEL This advanced high cell density HDTMOS power FET is 50 AMPERES designed to withstand high energy in the avalanche and commuta

 4.1. Size:183K  motorola
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MTP50P03HDLG

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP50P03HDL/D Designer's Data Sheet MTP50P03HDL HDTMOS E-FET. Motorola Preferred Device Power Field Effect Transistor P Channel Enhancement Mode Silicon Gate TMOS POWER FET LOGIC LEVEL This advanced high cell density HDTMOS power FET is 50 AMPERES designed to withstand high energy in the avalanche and commuta

MOSTRAR MÁS

Otros transistores... MTP4N40E, MTP4N45, MTP4N50, MTP4N60, MTP4N80E, MTP4N85, MTP4N90, MTP50N06V, 2N7002, MTP5N05, MTP5N06, MTP5N35, MTP5N40, MTP5N40E, MTP5N60, MTP5P18, MTP5P20