MTP50P03HDLG Datasheet. Specs and Replacement

Type Designator: MTP50P03HDLG  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 125 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 15 V

|Id| ⓘ - Maximum Drain Current: 50 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 340 nS

Cossⓘ - Output Capacitance: 1550 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.025 Ohm

Package: TO-220AB

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MTP50P03HDLG datasheet

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MTP50P03HDLG

MTP50P03HDL Preferred Device Power MOSFET 50 Amps, 30 Volts, Logic Level P-Channel TO-220 This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The energy efficient design also http //onsemi.com offers a drain-to-source diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies, 50 AMPERES, 30... See More ⇒

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MTP50P03HDLG

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP50P03HDL/D Designer's Data Sheet MTP50P03HDL HDTMOS E-FET. Motorola Preferred Device Power Field Effect Transistor P Channel Enhancement Mode Silicon Gate TMOS POWER FET LOGIC LEVEL This advanced high cell density HDTMOS power FET is 50 AMPERES designed to withstand high energy in the avalanche and commuta... See More ⇒

 3.2. Size:131K  motorola
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MTP50P03HDLG

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP50P03HDL/D Designer's Data Sheet MTP50P03HDL HDTMOS E-FET. Motorola Preferred Device Power Field Effect Transistor P Channel Enhancement Mode Silicon Gate TMOS POWER FET LOGIC LEVEL This advanced high cell density HDTMOS power FET is 50 AMPERES designed to withstand high energy in the avalanche and commuta... See More ⇒

 4.1. Size:183K  motorola
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MTP50P03HDLG

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP50P03HDL/D Designer's Data Sheet MTP50P03HDL HDTMOS E-FET. Motorola Preferred Device Power Field Effect Transistor P Channel Enhancement Mode Silicon Gate TMOS POWER FET LOGIC LEVEL This advanced high cell density HDTMOS power FET is 50 AMPERES designed to withstand high energy in the avalanche and commuta... See More ⇒

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Detailed specifications: MTP4N40E, MTP4N45, MTP4N50, MTP4N60, MTP4N80E, MTP4N85, MTP4N90, MTP50N06V, 2N7002, MTP5N05, MTP5N06, MTP5N35, MTP5N40, MTP5N40E, MTP5N60, MTP5P18, MTP5P20

Keywords - MTP50P03HDLG MOSFET specs

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