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MTP50P03HDLG Spec and Replacement


   Type Designator: MTP50P03HDLG
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 125 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 15 V
   |Id| ⓘ - Maximum Drain Current: 50 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 340 nS
   Cossⓘ - Output Capacitance: 1550 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.025 Ohm
   Package: TO-220AB

 MTP50P03HDLG Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

MTP50P03HDLG Specs

 ..1. Size:85K  onsemi
 mtp50p03hdl-d mtp50p03hdlg.pdf pdf_icon

MTP50P03HDLG

MTP50P03HDL Preferred Device Power MOSFET 50 Amps, 30 Volts, Logic Level P-Channel TO-220 This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The energy efficient design also http //onsemi.com offers a drain-to-source diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies, 50 AMPERES, 30... See More ⇒

 3.1. Size:136K  motorola
 mtp50p03hdl.pdf pdf_icon

MTP50P03HDLG

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP50P03HDL/D Designer's Data Sheet MTP50P03HDL HDTMOS E-FET. Motorola Preferred Device Power Field Effect Transistor P Channel Enhancement Mode Silicon Gate TMOS POWER FET LOGIC LEVEL This advanced high cell density HDTMOS power FET is 50 AMPERES designed to withstand high energy in the avalanche and commuta... See More ⇒

 3.2. Size:131K  motorola
 mtp50p03hdlrev2.pdf pdf_icon

MTP50P03HDLG

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP50P03HDL/D Designer's Data Sheet MTP50P03HDL HDTMOS E-FET. Motorola Preferred Device Power Field Effect Transistor P Channel Enhancement Mode Silicon Gate TMOS POWER FET LOGIC LEVEL This advanced high cell density HDTMOS power FET is 50 AMPERES designed to withstand high energy in the avalanche and commuta... See More ⇒

 4.1. Size:183K  motorola
 mtp50p03hd.pdf pdf_icon

MTP50P03HDLG

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP50P03HDL/D Designer's Data Sheet MTP50P03HDL HDTMOS E-FET. Motorola Preferred Device Power Field Effect Transistor P Channel Enhancement Mode Silicon Gate TMOS POWER FET LOGIC LEVEL This advanced high cell density HDTMOS power FET is 50 AMPERES designed to withstand high energy in the avalanche and commuta... See More ⇒

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Detailed specifications: MTP4N40E , MTP4N45 , MTP4N50 , MTP4N60 , MTP4N80E , MTP4N85 , MTP4N90 , MTP50N06V , IRFB4110 , MTP5N05 , MTP5N06 , MTP5N35 , MTP5N40 , MTP5N40E , MTP5N60 , MTP5P18 , MTP5P20 .

History: 2SK3653 | PTD12N10 | ZVN4306ASTOB | SSS5N80A | SUP40P10-43 | 2SK1292 | ZVN4210GTA

Keywords - MTP50P03HDLG MOSFET specs

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