MTP8N20 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MTP8N20
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 75 W
Voltaje máximo drenador - fuente |Vds|: 200 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 8 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 4.5 V
Carga de la puerta (Qg): 15 nC
Tiempo de subida (tr): 150 nS
Conductancia de drenaje-sustrato (Cd): 300 pF
Resistencia entre drenaje y fuente RDS(on): 0.4 Ohm
Paquete / Cubierta: TO-220AB
Búsqueda de reemplazo de MOSFET MTP8N20
MTP8N20 Datasheet (PDF)
mtp8n50erev2x.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTP8N50E/DDesigner's Data SheetMTP8N50ETMOS E-FET.Power Field Effect TransistorNChannel EnhancementMode Silicon GateTMOS POWER FETThis high voltage MOSFET uses an advanced termination8.0 AMPERESscheme to provide enhanced voltageblocking capability without500 VOLTSdegrading performance over time.
mtp8n06erev1.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTP8N06E/DDesigner's Data SheetMTP8N06ETMOS E-FET.Motorola Preferred DevicePower Field Effect TransistorNChannel EnhancementMode Silicon GateTMOS POWER FETThis advanced TMOS EFET is designed to withstand high8.0 AMPERESenergy in the avalanche and commutation modes. The new energy60 VOLTSeffici
mtp8n06e.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTP8N06E/DDesigner's Data SheetMTP8N06ETMOS E-FET.Motorola Preferred DevicePower Field Effect TransistorNChannel EnhancementMode Silicon GateTMOS POWER FETThis advanced TMOS EFET is designed to withstand high8.0 AMPERESenergy in the avalanche and commutation modes. The new energy60 VOLTSeffici
mtp8n50e.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTP8N50E/DDesigner's Data SheetMTP8N50ETMOS E-FET.Power Field Effect TransistorNChannel EnhancementMode Silicon GateTMOS POWER FETThis high voltage MOSFET uses an advanced termination8.0 AMPERESscheme to provide enhanced voltageblocking capability without500 VOLTSdegrading performance over time.
mtp8n06.pdf
MTP8N06www.VBsemi.twN-Channel 60 V(D-S) MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt ratingVDS (V) 60 Fast switchingRDS(on) ()VGS = 10 V 0.072 Ease of parallelingQg max. (nC) 25Simple drive requirementsQgs (nC) 5.8Qgd (nC) 11Configuration SingleDTO-220ABGSDGSN-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted)P
Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
