MTW20N50E MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MTW20N50E
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 250 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 500 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 20 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 90 nS
Cossⓘ - Capacitancia de salida: 452 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.24 Ohm
Encapsulados: TO-247AE
Búsqueda de reemplazo de MTW20N50E MOSFET
- Selecciónⓘ de transistores por parámetros
MTW20N50E datasheet
mtw20n50e.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTW20N50E/D Designer's Data Sheet MTW20N50E TMOS E-FET. Motorola Preferred Device Power Field Effect Transistor TO-247 with Isolated Mounting Hole TMOS POWER FET N Channel Enhancement Mode Silicon Gate 20 AMPERES 500 VOLTS This high voltage MOSFET uses an advanced termination RDS(on) = 0.24 OHM scheme to provi
mtw20n50e.pdf
MTW20N50E Preferred Device Power MOSFET 20 Amps, 500 Volts N Channel TO 247 This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage blocking capability without degrading http //onsemi.com performance over time. In addition, this advanced Power MOSFET is designed to withstand high energy in the avalanche and commutation 20 AMPERES modes. The new
mtw20n50erev4.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTW20N50E/D Designer's Data Sheet MTW20N50E TMOS E-FET. Motorola Preferred Device Power Field Effect Transistor TO-247 with Isolated Mounting Hole TMOS POWER FET N Channel Enhancement Mode Silicon Gate 20 AMPERES 500 VOLTS This high voltage MOSFET uses an advanced termination RDS(on) = 0.24 OHM scheme to provi
Otros transistores... MTP8N60 , MTP8P08 , MTP8P10 , MTP8P25 , MTW10N100E , MTW10N40E , MTW14N50E , MTW16N40E , SPP20N60C3 , MTW23N25E , MTW24N40E , MTW26N15E , MTW32N20EG , MTW32N25E , MTW33N10E , MTW35N15E , MTW45N10E .
🌐 : EN ES РУ
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: AUB062N08BG | AUB060N08AG | AUB056N10 | AUB056N08BGL | AUB050N085 | AUB050N055 | AUB045N12 | AUB045N10BT | AUB039N10 | AUB034N10 | AUB033N08BG | AUB026N085 | AUA062N08BG | AUA060N08AG | AUA056N08BGL | AUA039N10
Popular searches
2n3053 | a1015 | mpsa42 | 2n5551 transistor | a1015 transistor | c945 | ac128 transistor | 2n3055 transistor