MTW20N50E Datasheet and Replacement
Type Designator: MTW20N50E
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 250 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id| ⓘ - Maximum Drain Current: 20 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Qg ⓘ - Total Gate Charge: 100 nC
tr ⓘ - Rise Time: 90 nS
Cossⓘ - Output Capacitance: 452 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.24 Ohm
Package: TO-247AE
MTW20N50E substitution
MTW20N50E Datasheet (PDF)
mtw20n50e.pdf

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTW20N50E/DDesigner's Data SheetMTW20N50ETMOS E-FET.Motorola Preferred DevicePower Field Effect TransistorTO-247 with Isolated Mounting HoleTMOS POWER FETNChannel EnhancementMode Silicon Gate 20 AMPERES500 VOLTSThis high voltage MOSFET uses an advanced terminationRDS(on) = 0.24 OHMscheme to provi
mtw20n50e.pdf

MTW20N50EPreferred DevicePower MOSFET20 Amps, 500 VoltsNChannel TO247This high voltage MOSFET uses an advanced termination schemeto provide enhanced voltageblocking capability without degradinghttp://onsemi.comperformance over time. In addition, this advanced Power MOSFET isdesigned to withstand high energy in the avalanche and commutation20 AMPERESmodes. The new
mtw20n50erev4.pdf

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTW20N50E/DDesigner's Data SheetMTW20N50ETMOS E-FET.Motorola Preferred DevicePower Field Effect TransistorTO-247 with Isolated Mounting HoleTMOS POWER FETNChannel EnhancementMode Silicon Gate 20 AMPERES500 VOLTSThis high voltage MOSFET uses an advanced terminationRDS(on) = 0.24 OHMscheme to provi
Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
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