All MOSFET. MTW20N50E Datasheet

 

MTW20N50E Datasheet and Replacement


   Type Designator: MTW20N50E
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 250 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 20 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 100 nC
   tr ⓘ - Rise Time: 90 nS
   Cossⓘ - Output Capacitance: 452 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.24 Ohm
   Package: TO-247AE
 

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MTW20N50E Datasheet (PDF)

 ..1. Size:169K  motorola
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MTW20N50E

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTW20N50E/DDesigner's Data SheetMTW20N50ETMOS E-FET.Motorola Preferred DevicePower Field Effect TransistorTO-247 with Isolated Mounting HoleTMOS POWER FETNChannel EnhancementMode Silicon Gate 20 AMPERES500 VOLTSThis high voltage MOSFET uses an advanced terminationRDS(on) = 0.24 OHMscheme to provi

 ..2. Size:96K  onsemi
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MTW20N50E

MTW20N50EPreferred DevicePower MOSFET20 Amps, 500 VoltsNChannel TO247This high voltage MOSFET uses an advanced termination schemeto provide enhanced voltageblocking capability without degradinghttp://onsemi.comperformance over time. In addition, this advanced Power MOSFET isdesigned to withstand high energy in the avalanche and commutation20 AMPERESmodes. The new

 0.1. Size:193K  motorola
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MTW20N50E

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTW20N50E/DDesigner's Data SheetMTW20N50ETMOS E-FET.Motorola Preferred DevicePower Field Effect TransistorTO-247 with Isolated Mounting HoleTMOS POWER FETNChannel EnhancementMode Silicon Gate 20 AMPERES500 VOLTSThis high voltage MOSFET uses an advanced terminationRDS(on) = 0.24 OHMscheme to provi

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

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