MTW32N20EG MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MTW32N20EG
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 180 W
Voltaje máximo drenador - fuente |Vds|: 200 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 32 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 4 V
Carga de la puerta (Qg): 85 nC
Tiempo de subida (tr): 120 nS
Conductancia de drenaje-sustrato (Cd): 690 pF
Resistencia entre drenaje y fuente RDS(on): 0.075 Ohm
Paquete / Cubierta: TO-247
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MTW32N20EG Datasheet (PDF)
mtw32n20eg.pdf
MTW32N20EPower MOSFET32 Amps, 200 VoltsN-Channel TO-247This advanced Power MOSFET is designed to withstand highhttp://onsemi.comenergy in the avalanche and commutation modes. The new energyefficient design also offers a drain-to-source diode with a fast32 AMPERES, 200 VOLTSrecovery time. Designed for low voltage, high speed switchingRDS(on) = 75 mWapplications in power sup
mtw32n20erev3.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTW32N20E/DDesigner's Data SheetMTW32N20ETMOS E-FET.Motorola Preferred DevicePower Field Effect TransistorTO-247 with Isolated Mounting HoleTMOS POWER FETNChannel EnhancementMode Silicon Gate 32 AMPERES200 VOLTSThis advanced TMOS EFET is designed to withstand highRDS(on) = 0.075 OHMenergy in t
mtw32n20e.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTW32N20E/DDesigner's Data SheetMTW32N20ETMOS E-FET.Motorola Preferred DevicePower Field Effect TransistorTO-247 with Isolated Mounting HoleTMOS POWER FETNChannel EnhancementMode Silicon Gate 32 AMPERES200 VOLTSThis advanced TMOS EFET is designed to withstand highRDS(on) = 0.075 OHMenergy in t
mtw32n20e.pdf
MTW32N20EPower MOSFET32 Amps, 200 VoltsN-Channel TO-247This advanced Power MOSFET is designed to withstand highhttp://onsemi.comenergy in the avalanche and commutation modes. The new energyefficient design also offers a drain-to-source diode with a fast32 AMPERES, 200 VOLTSrecovery time. Designed for low voltage, high speed switchingRDS(on) = 75 mWapplications in power sup
mtw32n20e.pdf
INCHANGE Semiconductorisc N-Channel MOSFET Transistor MTW32N20EFEATURESWith TO-247 packagingWith low gate drive requirementsLow switching lossLow on-state resistanceEasy to drive100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)
Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
