MTW32N20EG Todos los transistores

 

MTW32N20EG MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MTW32N20EG

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 180 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 200 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 32 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 120 nS

Cossⓘ - Capacitancia de salida: 690 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.075 Ohm

Encapsulados: TO-247

 Búsqueda de reemplazo de MTW32N20EG MOSFET

- Selecciónⓘ de transistores por parámetros

 

MTW32N20EG datasheet

 ..1. Size:125K  onsemi
mtw32n20eg.pdf pdf_icon

MTW32N20EG

MTW32N20E Power MOSFET 32 Amps, 200 Volts N-Channel TO-247 This advanced Power MOSFET is designed to withstand high http //onsemi.com energy in the avalanche and commutation modes. The new energy efficient design also offers a drain-to-source diode with a fast 32 AMPERES, 200 VOLTS recovery time. Designed for low voltage, high speed switching RDS(on) = 75 mW applications in power sup

 5.1. Size:205K  motorola
mtw32n20erev3.pdf pdf_icon

MTW32N20EG

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTW32N20E/D Designer's Data Sheet MTW32N20E TMOS E-FET. Motorola Preferred Device Power Field Effect Transistor TO-247 with Isolated Mounting Hole TMOS POWER FET N Channel Enhancement Mode Silicon Gate 32 AMPERES 200 VOLTS This advanced TMOS E FET is designed to withstand high RDS(on) = 0.075 OHM energy in t

 5.2. Size:178K  motorola
mtw32n20e.pdf pdf_icon

MTW32N20EG

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTW32N20E/D Designer's Data Sheet MTW32N20E TMOS E-FET. Motorola Preferred Device Power Field Effect Transistor TO-247 with Isolated Mounting Hole TMOS POWER FET N Channel Enhancement Mode Silicon Gate 32 AMPERES 200 VOLTS This advanced TMOS E FET is designed to withstand high RDS(on) = 0.075 OHM energy in t

 5.3. Size:182K  onsemi
mtw32n20e.pdf pdf_icon

MTW32N20EG

MTW32N20E Power MOSFET 32 Amps, 200 Volts N-Channel TO-247 This advanced Power MOSFET is designed to withstand high http //onsemi.com energy in the avalanche and commutation modes. The new energy efficient design also offers a drain-to-source diode with a fast 32 AMPERES, 200 VOLTS recovery time. Designed for low voltage, high speed switching RDS(on) = 75 mW applications in power sup

Otros transistores... MTW10N100E , MTW10N40E , MTW14N50E , MTW16N40E , MTW20N50E , MTW23N25E , MTW24N40E , MTW26N15E , AON7410 , MTW32N25E , MTW33N10E , MTW35N15E , MTW45N10E , MTW4N80E , MTW6N60E , MTW7N80E , MTW8N50E .

 

 

 


🌐 : EN  ES  РУ

social

Liste

Recientemente añadidas las descripciónes de los transistores:

MOSFET: AUB062N08BG | AUB060N08AG | AUB056N10 | AUB056N08BGL | AUB050N085 | AUB050N055 | AUB045N12 | AUB045N10BT | AUB039N10 | AUB034N10 | AUB033N08BG | AUB026N085 | AUA062N08BG | AUA060N08AG | AUA056N08BGL | AUA039N10

 

 

 

Popular searches

a1015 transistor | c945 | ac128 transistor | 2n3055 transistor | 2n3904 datasheet | irf3710 | tip3055 | mosfet datasheet

 

 

↑ Back to Top
.