MTW32N20EG MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MTW32N20EG
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 180 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 200 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 32 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 120 nS
Cossⓘ - Capacitancia de salida: 690 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.075 Ohm
Encapsulados: TO-247
Búsqueda de reemplazo de MTW32N20EG MOSFET
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MTW32N20EG datasheet
mtw32n20eg.pdf
MTW32N20E Power MOSFET 32 Amps, 200 Volts N-Channel TO-247 This advanced Power MOSFET is designed to withstand high http //onsemi.com energy in the avalanche and commutation modes. The new energy efficient design also offers a drain-to-source diode with a fast 32 AMPERES, 200 VOLTS recovery time. Designed for low voltage, high speed switching RDS(on) = 75 mW applications in power sup
mtw32n20erev3.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTW32N20E/D Designer's Data Sheet MTW32N20E TMOS E-FET. Motorola Preferred Device Power Field Effect Transistor TO-247 with Isolated Mounting Hole TMOS POWER FET N Channel Enhancement Mode Silicon Gate 32 AMPERES 200 VOLTS This advanced TMOS E FET is designed to withstand high RDS(on) = 0.075 OHM energy in t
mtw32n20e.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTW32N20E/D Designer's Data Sheet MTW32N20E TMOS E-FET. Motorola Preferred Device Power Field Effect Transistor TO-247 with Isolated Mounting Hole TMOS POWER FET N Channel Enhancement Mode Silicon Gate 32 AMPERES 200 VOLTS This advanced TMOS E FET is designed to withstand high RDS(on) = 0.075 OHM energy in t
mtw32n20e.pdf
MTW32N20E Power MOSFET 32 Amps, 200 Volts N-Channel TO-247 This advanced Power MOSFET is designed to withstand high http //onsemi.com energy in the avalanche and commutation modes. The new energy efficient design also offers a drain-to-source diode with a fast 32 AMPERES, 200 VOLTS recovery time. Designed for low voltage, high speed switching RDS(on) = 75 mW applications in power sup
Otros transistores... MTW10N100E , MTW10N40E , MTW14N50E , MTW16N40E , MTW20N50E , MTW23N25E , MTW24N40E , MTW26N15E , AON7410 , MTW32N25E , MTW33N10E , MTW35N15E , MTW45N10E , MTW4N80E , MTW6N60E , MTW7N80E , MTW8N50E .
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