MTW32N20EG Datasheet and Replacement
Type Designator: MTW32N20EG
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 180 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 32 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 120 nS
Cossⓘ - Output Capacitance: 690 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.075 Ohm
Package: TO-247
MTW32N20EG substitution
MTW32N20EG Datasheet (PDF)
mtw32n20eg.pdf
MTW32N20EPower MOSFET32 Amps, 200 VoltsN-Channel TO-247This advanced Power MOSFET is designed to withstand highhttp://onsemi.comenergy in the avalanche and commutation modes. The new energyefficient design also offers a drain-to-source diode with a fast32 AMPERES, 200 VOLTSrecovery time. Designed for low voltage, high speed switchingRDS(on) = 75 mWapplications in power sup
mtw32n20erev3.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTW32N20E/DDesigner's Data SheetMTW32N20ETMOS E-FET.Motorola Preferred DevicePower Field Effect TransistorTO-247 with Isolated Mounting HoleTMOS POWER FETNChannel EnhancementMode Silicon Gate 32 AMPERES200 VOLTSThis advanced TMOS EFET is designed to withstand highRDS(on) = 0.075 OHMenergy in t
mtw32n20e.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTW32N20E/DDesigner's Data SheetMTW32N20ETMOS E-FET.Motorola Preferred DevicePower Field Effect TransistorTO-247 with Isolated Mounting HoleTMOS POWER FETNChannel EnhancementMode Silicon Gate 32 AMPERES200 VOLTSThis advanced TMOS EFET is designed to withstand highRDS(on) = 0.075 OHMenergy in t
mtw32n20e.pdf
MTW32N20EPower MOSFET32 Amps, 200 VoltsN-Channel TO-247This advanced Power MOSFET is designed to withstand highhttp://onsemi.comenergy in the avalanche and commutation modes. The new energyefficient design also offers a drain-to-source diode with a fast32 AMPERES, 200 VOLTSrecovery time. Designed for low voltage, high speed switchingRDS(on) = 75 mWapplications in power sup
Datasheet: MTW10N100E , MTW10N40E , MTW14N50E , MTW16N40E , MTW20N50E , MTW23N25E , MTW24N40E , MTW26N15E , RFP50N06 , MTW32N25E , MTW33N10E , MTW35N15E , MTW45N10E , MTW4N80E , MTW6N60E , MTW7N80E , MTW8N50E .
History: SVG103R0NT | DMP2160UW | HY1603D | ZXMP3A17DN8 | TPCP8203 | 2SK066500L | SM2221CSQG
Keywords - MTW32N20EG MOSFET datasheet
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History: SVG103R0NT | DMP2160UW | HY1603D | ZXMP3A17DN8 | TPCP8203 | 2SK066500L | SM2221CSQG
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