MTW32N20EG PDF and Equivalents Search

 

MTW32N20EG Specs and Replacement

Type Designator: MTW32N20EG

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 180 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 32 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 120 nS

Cossⓘ - Output Capacitance: 690 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.075 Ohm

Package: TO-247

MTW32N20EG substitution

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MTW32N20EG datasheet

 ..1. Size:125K  onsemi
 mtw32n20eg.pdf pdf_icon

MTW32N20EG

MTW32N20E Power MOSFET 32 Amps, 200 Volts N-Channel TO-247 This advanced Power MOSFET is designed to withstand high http //onsemi.com energy in the avalanche and commutation modes. The new energy efficient design also offers a drain-to-source diode with a fast 32 AMPERES, 200 VOLTS recovery time. Designed for low voltage, high speed switching RDS(on) = 75 mW applications in power sup... See More ⇒

 5.1. Size:205K  motorola
 mtw32n20erev3.pdf pdf_icon

MTW32N20EG

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTW32N20E/D Designer's Data Sheet MTW32N20E TMOS E-FET. Motorola Preferred Device Power Field Effect Transistor TO-247 with Isolated Mounting Hole TMOS POWER FET N Channel Enhancement Mode Silicon Gate 32 AMPERES 200 VOLTS This advanced TMOS E FET is designed to withstand high RDS(on) = 0.075 OHM energy in t... See More ⇒

 5.2. Size:178K  motorola
 mtw32n20e.pdf pdf_icon

MTW32N20EG

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTW32N20E/D Designer's Data Sheet MTW32N20E TMOS E-FET. Motorola Preferred Device Power Field Effect Transistor TO-247 with Isolated Mounting Hole TMOS POWER FET N Channel Enhancement Mode Silicon Gate 32 AMPERES 200 VOLTS This advanced TMOS E FET is designed to withstand high RDS(on) = 0.075 OHM energy in t... See More ⇒

 5.3. Size:182K  onsemi
 mtw32n20e.pdf pdf_icon

MTW32N20EG

MTW32N20E Power MOSFET 32 Amps, 200 Volts N-Channel TO-247 This advanced Power MOSFET is designed to withstand high http //onsemi.com energy in the avalanche and commutation modes. The new energy efficient design also offers a drain-to-source diode with a fast 32 AMPERES, 200 VOLTS recovery time. Designed for low voltage, high speed switching RDS(on) = 75 mW applications in power sup... See More ⇒

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Detailed specifications: MTW10N100E, MTW10N40E, MTW14N50E, MTW16N40E, MTW20N50E, MTW23N25E, MTW24N40E, MTW26N15E, AON7410, MTW32N25E, MTW33N10E, MTW35N15E, MTW45N10E, MTW4N80E, MTW6N60E, MTW7N80E, MTW8N50E

Keywords - MTW32N20EG MOSFET specs

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