All MOSFET. MTW32N20EG Datasheet

 

MTW32N20EG MOSFET. Datasheet pdf. Equivalent


   Type Designator: MTW32N20EG
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 180 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 32 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 85 nC
   trⓘ - Rise Time: 120 nS
   Cossⓘ - Output Capacitance: 690 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.075 Ohm
   Package: TO-247

 MTW32N20EG Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

MTW32N20EG Datasheet (PDF)

 ..1. Size:125K  onsemi
 mtw32n20eg.pdf

MTW32N20EG MTW32N20EG

MTW32N20EPower MOSFET32 Amps, 200 VoltsN-Channel TO-247This advanced Power MOSFET is designed to withstand highhttp://onsemi.comenergy in the avalanche and commutation modes. The new energyefficient design also offers a drain-to-source diode with a fast32 AMPERES, 200 VOLTSrecovery time. Designed for low voltage, high speed switchingRDS(on) = 75 mWapplications in power sup

 5.1. Size:205K  motorola
 mtw32n20erev3.pdf

MTW32N20EG MTW32N20EG

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTW32N20E/DDesigner's Data SheetMTW32N20ETMOS E-FET.Motorola Preferred DevicePower Field Effect TransistorTO-247 with Isolated Mounting HoleTMOS POWER FETNChannel EnhancementMode Silicon Gate 32 AMPERES200 VOLTSThis advanced TMOS EFET is designed to withstand highRDS(on) = 0.075 OHMenergy in t

 5.2. Size:178K  motorola
 mtw32n20e.pdf

MTW32N20EG MTW32N20EG

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTW32N20E/DDesigner's Data SheetMTW32N20ETMOS E-FET.Motorola Preferred DevicePower Field Effect TransistorTO-247 with Isolated Mounting HoleTMOS POWER FETNChannel EnhancementMode Silicon Gate 32 AMPERES200 VOLTSThis advanced TMOS EFET is designed to withstand highRDS(on) = 0.075 OHMenergy in t

 5.3. Size:182K  onsemi
 mtw32n20e.pdf

MTW32N20EG MTW32N20EG

MTW32N20EPower MOSFET32 Amps, 200 VoltsN-Channel TO-247This advanced Power MOSFET is designed to withstand highhttp://onsemi.comenergy in the avalanche and commutation modes. The new energyefficient design also offers a drain-to-source diode with a fast32 AMPERES, 200 VOLTSrecovery time. Designed for low voltage, high speed switchingRDS(on) = 75 mWapplications in power sup

 5.4. Size:212K  inchange semiconductor
 mtw32n20e.pdf

MTW32N20EG MTW32N20EG

INCHANGE Semiconductorisc N-Channel MOSFET Transistor MTW32N20EFEATURESWith TO-247 packagingWith low gate drive requirementsLow switching lossLow on-state resistanceEasy to drive100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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