2SK562 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: 2SK562
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 125 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 50 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 39 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.04 Ohm
Paquete / Cubierta: TO3P

Búsqueda de reemplazo de MOSFET 2SK562

2SK562 Datasheet (PDF)

..1. Size:236K inchange semiconductor
2sk562.pdf

isc N-Channel MOSFET Transistor 2SK562FEATURESDrain Current I =39A@ T =25D CDrain Source Voltage-: V = 50V(Min)DSSFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONHigh speed power Switching.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Sou

9.1. Size:256K toshiba
2sk568.pdf

"MG8G4EM1""MG8G4EM1""MG8G4EM1""MG8G4EM1""MG8G4EM1""MG8G4EM1"

9.2. Size:184K no
2sk559 2sk560.pdf

9.3. Size:51K no
2sk56.pdf

9.4. Size:236K inchange semiconductor
2sk560.pdf

isc N-Channel MOSFET Transistor 2SK560DESCRIPTIONDrain Current I =15A@ T =25D CDrain Source Voltage-: V =500V(Min)DSSFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned especially for high voltage,high speed applications,such as off-line switching power supplies

9.5. Size:236K inchange semiconductor
2sk565.pdf

isc N-Channel MOSFET Transistor 2SK565FEATURESDrain Current I =9.6A@ T =25D CDrain Source Voltage-: V = 500V(Min)DSSFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose applications.ABSOLUTE MAXIMUM RATING

9.6. Size:236K inchange semiconductor
2sk564.pdf

isc N-Channel MOSFET Transistor 2SK564FEATURESDrain Current I =32A@ T =25D CDrain Source Voltage-: V = 100V(Min)DSSFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose applications.ABSOLUTE MAXIMUM RATINGS

9.7. Size:236K inchange semiconductor
2sk566.pdf

isc N-Channel MOSFET Transistor 2SK566FEATURESDrain Current I =2.9A@ T =25D CDrain Source Voltage-: V = 800V(Min)DSSFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned especially for high voltage,high speed applications,such as off-line switching power supplies ,

Otros transistores... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

Liste

Recientemente añadidas las descripciónes de los transistores: