2SK562 Specs and Replacement
Type Designator: 2SK562
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 125 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 50 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 39 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.04 Ohm
Package: TO3P
2SK562 substitution
- MOSFET ⓘ Cross-Reference Search
2SK562 datasheet
2sk562.pdf
isc N-Channel MOSFET Transistor 2SK562 FEATURES Drain Current I =39A@ T =25 D C Drain Source Voltage- V = 50V(Min) DSS Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION High speed power Switching. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Sou... See More ⇒
2sk568.pdf
"MG8G4EM1" "MG8G4EM1" "MG8G4EM1" "MG8G4EM1" "MG8G4EM1" "MG8G4EM1" ... See More ⇒
Detailed specifications: MTM3N80, 125N10T, 2SJ156, 2SJ171, 2SK2071-01L, 2SK399, 2SK400, 2SK429, IRLB3034, 2SK564, 2SK566, 2SK602, 2SK604, 2SK610, 2SK616, 2SK617, 2SK622
Keywords - 2SK562 MOSFET specs
2SK562 cross reference
2SK562 equivalent finder
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Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
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