2SK617 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SK617
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 40 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 800 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 1 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 5 VRds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 8 Ohm
Paquete / Cubierta: TO220F
Búsqueda de reemplazo de MOSFET 2SK617
2SK617 Datasheet (PDF)
2sk617.pdf
isc N-Channel MOSFET Transistor 2SK617FEATURESDrain Current I =1A@ T =25D CDrain Source Voltage-: V = 800V(Min)DSS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for low voltage, high speed power switchingapplications such as switching regulators, converters,solenoid and relay dri
2sk615.pdf
Silicon MOS FETs (Small Signal) 2SK6152SK615Silicon N-Channel MOSUnit : mmFor switching6.9 0.1 2.5 0.11.5 Features 1.5 R0.9 1.0R0.9 Low ON-resistance RDS(on) High-speed switching Direct drive possible with CMOS, TTL Easy automatic- /manual-insertion due to M type package. Self-fix-0.85ing to printed circuits board.0.55 0.1 0.45 0.053 2 1 Absolute Maximu
2sk614.pdf
Silicon MOS FETs (Small Signal) 2SK6142SK614Silicon N-Channel MOSUnit : mmFor switching5.0 0.2 4.0 0.2 Features Low ON-resistance RDS(on) High-speed switching Direct drive possible with CMOS, TTL+0.2 +0.20.45 0.1 0.45 0.11.27 1.27 Absolute Maximum Ratings (Ta = 25C)1 : SourceParameter Symbol Rating Unit2 : Drain3 : GateDrain-Source voltage VDS 80
2sk616.pdf
isc N-Channel MOSFET Transistor 2SK616FEATURESDrain Current I =22A@ T =25D CDrain Source Voltage-: V = 200V(Min)DSSFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose applications.ABSOLUTE MAXIMUM RATINGS
2sk610.pdf
isc N-Channel MOSFET Transistor 2SK610FEATURESDrain Current I =3A@ T =25D CDrain Source Voltage-: V = 400V(Min)DSS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONHigh Voltage.High speed power switching.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Vol
Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
Liste
Recientemente añadidas las descripciónes de los transistores:
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