2SK617 Todos los transistores

 

2SK617 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SK617

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 40 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 800 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 1 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 8 Ohm

Encapsulados: TO220F

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2SK617 datasheet

 ..1. Size:235K  inchange semiconductor
2sk617.pdf pdf_icon

2SK617

isc N-Channel MOSFET Transistor 2SK617 FEATURES Drain Current I =1A@ T =25 D C Drain Source Voltage- V = 800V(Min) DSS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for low voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay dri

 9.1. Size:295K  1
2sk611.pdf pdf_icon

2SK617

 9.2. Size:110K  nec
2sk612-z.pdf pdf_icon

2SK617

 9.3. Size:34K  panasonic
2sk615.pdf pdf_icon

2SK617

Silicon MOS FETs (Small Signal) 2SK615 2SK615 Silicon N-Channel MOS Unit mm For switching 6.9 0.1 2.5 0.1 1.5 Features 1.5 R0.9 1.0 R0.9 Low ON-resistance RDS(on) High-speed switching Direct drive possible with CMOS, TTL Easy automatic- /manual-insertion due to M type package. Self-fix- 0.85 ing to printed circuits board. 0.55 0.1 0.45 0.05 3 2 1 Absolute Maximu

Otros transistores... 2SK429 , 2SK562 , 2SK564 , 2SK566 , 2SK602 , 2SK604 , 2SK610 , 2SK616 , MMIS60R580P , 2SK622 , 2SK627 , 2SK629 , 2SK630 , 2SK631 , 2SK632 , 2SK633 , 2SK634 .

History: 2SK4002 | MTM3N80

 

 

 


History: 2SK4002 | MTM3N80

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