2SK617 - описание и поиск аналогов

isc N-Channel MOSFET Transistor 2SK617 FEATURES Drain Current I =1A@ T =25 D C Drain Source Voltage- V = 800V(Min) DSS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for low voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay dri

Silicon MOS FETs (Small Signal) 2SK615 2SK615 Silicon N-Channel MOS Unit mm For switching 6.9 0.1 2.5 0.1 1.5 Features 1.5 R0.9 1.0 R0.9 Low ON-resistance RDS(on) High-speed switching Direct drive possible with CMOS, TTL Easy automatic- /manual-insertion due to M type package. Self-fix- 0.85 ing to printed circuits board. 0.55 0.1 0.45 0.05 3 2 1 Absolute Maximu

Silicon MOS FETs (Small Signal) 2SK614 2SK614 Silicon N-Channel MOS Unit mm For switching 5.0 0.2 4.0 0.2 Features Low ON-resistance RDS(on) High-speed switching Direct drive possible with CMOS, TTL +0.2 +0.2 0.45 0.1 0.45 0.1 1.27 1.27 Absolute Maximum Ratings (Ta = 25 C) 1 Source Parameter Symbol Rating Unit 2 Drain 3 Gate Drain-Source voltage VDS 80

isc N-Channel MOSFET Transistor 2SK616 FEATURES Drain Current I =22A@ T =25 D C Drain Source Voltage- V = 200V(Min) DSS Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS

isc N-Channel MOSFET Transistor 2SK610 FEATURES Drain Current I =3A@ T =25 D C Drain Source Voltage- V = 400V(Min) DSS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION High Voltage. High speed power switching. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Vol