2SK617 - Даташиты. Аналоги. Основные параметры

isc N-Channel MOSFET Transistor 2SK617FEATURESDrain Current I =1A@ T =25D CDrain Source Voltage-: V = 800V(Min)DSS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for low voltage, high speed power switchingapplications such as switching regulators, converters,solenoid and relay dri

Silicon MOS FETs (Small Signal) 2SK6152SK615Silicon N-Channel MOSUnit : mmFor switching6.9 0.1 2.5 0.11.5 Features 1.5 R0.9 1.0R0.9 Low ON-resistance RDS(on) High-speed switching Direct drive possible with CMOS, TTL Easy automatic- /manual-insertion due to M type package. Self-fix-0.85ing to printed circuits board.0.55 0.1 0.45 0.053 2 1 Absolute Maximu

Silicon MOS FETs (Small Signal) 2SK6142SK614Silicon N-Channel MOSUnit : mmFor switching5.0 0.2 4.0 0.2 Features Low ON-resistance RDS(on) High-speed switching Direct drive possible with CMOS, TTL+0.2 +0.20.45 0.1 0.45 0.11.27 1.27 Absolute Maximum Ratings (Ta = 25C)1 : SourceParameter Symbol Rating Unit2 : Drain3 : GateDrain-Source voltage VDS 80

isc N-Channel MOSFET Transistor 2SK616FEATURESDrain Current I =22A@ T =25D CDrain Source Voltage-: V = 200V(Min)DSSFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose applications.ABSOLUTE MAXIMUM RATINGS

isc N-Channel MOSFET Transistor 2SK610FEATURESDrain Current I =3A@ T =25D CDrain Source Voltage-: V = 400V(Min)DSS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONHigh Voltage.High speed power switching.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Vol