SML20H45 Todos los transistores

 

SML20H45 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SML20H45

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 250 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 200 V

|Id|ⓘ - Corriente continua de drenaje: 45 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Cossⓘ - Capacitancia de salida: 4500 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.04 Ohm

Encapsulados: TO258

 Búsqueda de reemplazo de SML20H45 MOSFET

- Selecciónⓘ de transistores por parámetros

 

SML20H45 datasheet

 ..1. Size:26K  semelab
sml20h45.pdf pdf_icon

SML20H45

SML20H45 TO 258 Package Outline. Dimensions in mm (inches) 6.86 (0.270) N CHANNEL 6.09 (0.240) 17.65 (0.695) 17.39 (0.685) 1.14 (0.707) ENHANCEMENT MODE 0.88 (0.035) HIGH VOLTAGE POWER MOSFETS 4.19 (0.165) 3.94 (0.155) Dia. 1 2 3 VDSS 200V ID(cont) 45A RDS(on) 0.040 5.08 (0.200) 3.56 (0.140) BSC BSC Faster Switching 1.65 (0.065) 1.39 (0.055) Lower Le

 9.1. Size:26K  semelab
sml20w65.pdf pdf_icon

SML20H45

SML20W65 TO 267 Package Outline. Dimensions in mm (inches) N CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS VDSS 200V ID(cont) 65A RDS(on) 0.026 Faster Switching Lower Leakage TO 267 Hermetic Package D StarMOS is a new generation of high voltage N Channel enhancement mode power MOSFETs. This new technology minimises the JFET effect, G increases

 9.2. Size:23K  semelab
sml20j175.pdf pdf_icon

SML20H45

SML20J175 SOT 227 Package Outline. Dimensions in mm (inches) 11.8 (0.463) 12.2 (0.480) 31.5 (1.240) N CHANNEL 31.7 (1.248) 8.9 (0.350) 7.8 (0.307) 4.1 (0.161 ) 8.2 (0.322) W = 9.6 (0.378) Hex Nut M 4 4.3 (0.169 ) ENHANCEMENT MODE (4 places) 4.8 (0.187) H = 4.9 (0.193) 1 2 (4 places) HIGH VOLTAGE R POWER MOSFETS 4.0 (0.157) 0.75 (0.030) 4.2 (0.165) 0.85 (0.033) 4 3

 9.3. Size:457K  semelab
sml2005smd1.pdf pdf_icon

SML20H45

N-CHANNEL POWER MOSFET SML2005SMD1 Low RDS(on) MOSFET Transistor. Hermetic Ceramic Surface Mount Package Ideally suited for Power Supply, Motor Controls and Amplifier Applications Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25 C unless otherwise stated) VDS Drain Source Voltage 200V VGS Gate Source Voltage 20V ID Tc = 25 C Con

Otros transistores... SML1201B8 , SML120B10 , SML120B8 , SML120J15 , SML120J25 , SML120L16 , SML20B56 , SML20B67 , IRF640 , SML20J122 , SML20J175 , SML20J97 , SML20L100 , SML20S56 , SML20S67 , SML20T75 , SML20W65 .

History: R6024ENX

 

 

 


History: R6024ENX

🌐 : EN  ES  РУ

social

Liste

Recientemente añadidas las descripciónes de los transistores:

MOSFET: AUB062N08BG | AUB060N08AG | AUB056N10 | AUB056N08BGL | AUB050N085 | AUB050N055 | AUB045N12 | AUB045N10BT | AUB039N10 | AUB034N10 | AUB033N08BG | AUB026N085 | AUA062N08BG | AUA060N08AG | AUA056N08BGL | AUA039N10

 

 

 

Popular searches

irf740 | c945 transistor | irf640n | 2n3904 | bc547 datasheet | k3797 mosfet | bs170 datasheet | tip41c

 

 

↑ Back to Top
.