2SK667 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SK667
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 80 W
Voltaje máximo drenador - fuente |Vds|: 400 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 8 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 5 V
Resistencia entre drenaje y fuente RDS(on): 1.5 Ohm
Paquete / Cubierta: TO3P
Búsqueda de reemplazo de MOSFET 2SK667
2SK667 Datasheet (PDF)
2sk667.pdf
isc N-Channel MOSFET Transistor 2SK667FEATURESDrain Current I =8A@ T =25D CDrain Source Voltage-: V = 400V(Min)DSS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for high voltage, high speed power switchingapplications such as switching regulators, converters,solenoid and relay dr
2sk104 2sk105 2sk162 2sk163 2sk193 2sk195 2sk505 2sk507 2sk514 2sk518 2sk519 2sk523 2sk533 2sk660 2sk997 2sk998 2sk1000 2sk1109.pdf
2sk669.pdf
Ordering number:EN2563CN-Channel Enhancement Silicon MOSFET2SK669Very High-Speed Switch,Analog Switch ApplicationsApplications Package Dimensions Analog switches, low-pass filters, Ultrahigh-speedunit:mmswitches.2040A[2SK669]2.24.0Features Large yfs . Enhancemet type.0.40.5 Small ON resistance.0.40.41 2 31 : Drain1.3 1.32 : Sour
2sk660.pdf
DATA SHEETJUNCTION FIELD EFFECT TRANSISTOR2SK660N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTORFOR IMPEDANCE CONVERTER OF ECMDESCRIPTION The 2SK660 is suitable for converter of ECM.FEATURES Compact package High forward transfer admittance| yfs | = 1200 S TYP. (VDS = 5 V, ID = 0 A) Low capacitanceCiss = 4.5 pF (VDS = 5 V, VGS = 0 V, f = 1 MHz) Include
2sk664.pdf
Silicon MOS FETs (Small Signal) 2SK6642SK664Silicon N-Channel MOSUnit : mmFor switching2.1 0.10.425 1.25 0.1 0.425 Features High-speed switching1 Downsizing of sets by S-mini type package and automatic insertionby taping/magazine packing are available.32 Absolute Maximum Ratings (Ta = 25C)0.2 0.1SymbolParameter Rating UnitVDSDrain-Source breakdown v
2sk662.pdf
Silicon Junction FETs (Small Signal) 2SK6622SK662Silicon N-Channel JunctionUnit : mmFor low-frequency amplification2.1 0.10.425 1.25 0.1 0.425 Features High mutual conductance gm1 Low noise type Downsizing of sets by S-mini type package and automatic insertion3by taping/magazine packing are available.2 Absolute Maximum Ratings (Ta = 25C)0.2 0.1Parameter
2sk665.pdf
Silicon MOS FETs (Small Signal) 2SK6652SK665Silicon N-Channel MOSUnit : mmFor switching2.1 0.10.425 1.25 0.1 0.425 Features High-speed switching1 Small drive current owing to high input impedance Extremely high electrostatic destruction voltage32 Absolute Maximum Ratings (Ta = 25C)0.2 0.1Parameter Symbol Rating UnitDrain-Source voltage VDS 20 V1 : Gat
2sk663.pdf
Silicon Junction FETs (Small Signal) 2SK6632SK663Silicon N-Channel JunctionUnit : mmFor low-frequency amplification2.1 0.1For switching0.425 1.25 0.1 0.425 Features1 High mutual conductance gm Low noise type3 Downsizing of sets by S-mini type package and automatic insertion2by taping/magazine packing are available. Absolute Maximum Ratings (Ta = 25C)0.2
Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
