Справочник MOSFET. 2SK667

 

2SK667 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: 2SK667
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 80 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 400 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 5 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 8 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 1.5 Ohm
   Тип корпуса: TO3P

 Аналог (замена) для 2SK667

 

 

2SK667 Datasheet (PDF)

 ..1. Size:242K  inchange semiconductor
2sk667.pdf

2SK667
2SK667

isc N-Channel MOSFET Transistor 2SK667FEATURESDrain Current I =8A@ T =25D CDrain Source Voltage-: V = 400V(Min)DSS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for high voltage, high speed power switchingapplications such as switching regulators, converters,solenoid and relay dr

 9.2. Size:61K  sanyo
2sk669.pdf

2SK667
2SK667

Ordering number:EN2563CN-Channel Enhancement Silicon MOSFET2SK669Very High-Speed Switch,Analog Switch ApplicationsApplications Package Dimensions Analog switches, low-pass filters, Ultrahigh-speedunit:mmswitches.2040A[2SK669]2.24.0Features Large yfs . Enhancemet type.0.40.5 Small ON resistance.0.40.41 2 31 : Drain1.3 1.32 : Sour

 9.3. Size:38K  nec
2sk660.pdf

2SK667
2SK667

DATA SHEETJUNCTION FIELD EFFECT TRANSISTOR2SK660N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTORFOR IMPEDANCE CONVERTER OF ECMDESCRIPTION The 2SK660 is suitable for converter of ECM.FEATURES Compact package High forward transfer admittance| yfs | = 1200 S TYP. (VDS = 5 V, ID = 0 A) Low capacitanceCiss = 4.5 pF (VDS = 5 V, VGS = 0 V, f = 1 MHz) Include

 9.4. Size:34K  panasonic
2sk664.pdf

2SK667
2SK667

Silicon MOS FETs (Small Signal) 2SK6642SK664Silicon N-Channel MOSUnit : mmFor switching2.1 0.10.425 1.25 0.1 0.425 Features High-speed switching1 Downsizing of sets by S-mini type package and automatic insertionby taping/magazine packing are available.32 Absolute Maximum Ratings (Ta = 25C)0.2 0.1SymbolParameter Rating UnitVDSDrain-Source breakdown v

 9.5. Size:30K  panasonic
2sk662.pdf

2SK667
2SK667

Silicon Junction FETs (Small Signal) 2SK6622SK662Silicon N-Channel JunctionUnit : mmFor low-frequency amplification2.1 0.10.425 1.25 0.1 0.425 Features High mutual conductance gm1 Low noise type Downsizing of sets by S-mini type package and automatic insertion3by taping/magazine packing are available.2 Absolute Maximum Ratings (Ta = 25C)0.2 0.1Parameter

 9.6. Size:35K  panasonic
2sk665.pdf

2SK667
2SK667

Silicon MOS FETs (Small Signal) 2SK6652SK665Silicon N-Channel MOSUnit : mmFor switching2.1 0.10.425 1.25 0.1 0.425 Features High-speed switching1 Small drive current owing to high input impedance Extremely high electrostatic destruction voltage32 Absolute Maximum Ratings (Ta = 25C)0.2 0.1Parameter Symbol Rating UnitDrain-Source voltage VDS 20 V1 : Gat

 9.7. Size:30K  panasonic
2sk663.pdf

2SK667
2SK667

Silicon Junction FETs (Small Signal) 2SK6632SK663Silicon N-Channel JunctionUnit : mmFor low-frequency amplification2.1 0.1For switching0.425 1.25 0.1 0.425 Features1 High mutual conductance gm Low noise type3 Downsizing of sets by S-mini type package and automatic insertion2by taping/magazine packing are available. Absolute Maximum Ratings (Ta = 25C)0.2

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