2SK667 - описание и поиск аналогов

isc N-Channel MOSFET Transistor 2SK667 FEATURES Drain Current I =8A@ T =25 D C Drain Source Voltage- V = 400V(Min) DSS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay dr

Ordering number EN2563C N-Channel Enhancement Silicon MOSFET 2SK669 Very High-Speed Switch, Analog Switch Applications Applications Package Dimensions Analog switches, low-pass filters, Ultrahigh-speed unit mm switches. 2040A [2SK669] 2.2 4.0 Features Large yfs . Enhancemet type. 0.4 0.5 Small ON resistance. 0.4 0.4 1 2 3 1 Drain 1.3 1.3 2 Sour

DATA SHEET JUNCTION FIELD EFFECT TRANSISTOR 2SK660 N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM DESCRIPTION The 2SK660 is suitable for converter of ECM. FEATURES Compact package High forward transfer admittance yfs = 1200 S TYP. (VDS = 5 V, ID = 0 A) Low capacitance Ciss = 4.5 pF (VDS = 5 V, VGS = 0 V, f = 1 MHz) Include

Silicon MOS FETs (Small Signal) 2SK664 2SK664 Silicon N-Channel MOS Unit mm For switching 2.1 0.1 0.425 1.25 0.1 0.425 Features High-speed switching 1 Downsizing of sets by S-mini type package and automatic insertion by taping/magazine packing are available. 3 2 Absolute Maximum Ratings (Ta = 25 C) 0.2 0.1 Symbol Parameter Rating Unit VDS Drain-Source breakdown v

Silicon Junction FETs (Small Signal) 2SK662 2SK662 Silicon N-Channel Junction Unit mm For low-frequency amplification 2.1 0.1 0.425 1.25 0.1 0.425 Features High mutual conductance gm 1 Low noise type Downsizing of sets by S-mini type package and automatic insertion 3 by taping/magazine packing are available. 2 Absolute Maximum Ratings (Ta = 25 C) 0.2 0.1 Parameter

Silicon MOS FETs (Small Signal) 2SK665 2SK665 Silicon N-Channel MOS Unit mm For switching 2.1 0.1 0.425 1.25 0.1 0.425 Features High-speed switching 1 Small drive current owing to high input impedance Extremely high electrostatic destruction voltage 3 2 Absolute Maximum Ratings (Ta = 25 C) 0.2 0.1 Parameter Symbol Rating Unit Drain-Source voltage VDS 20 V 1 Gat

Silicon Junction FETs (Small Signal) 2SK663 2SK663 Silicon N-Channel Junction Unit mm For low-frequency amplification 2.1 0.1 For switching 0.425 1.25 0.1 0.425 Features 1 High mutual conductance gm Low noise type 3 Downsizing of sets by S-mini type package and automatic insertion 2 by taping/magazine packing are available. Absolute Maximum Ratings (Ta = 25 C) 0.2