SPB80N06S2L-H5 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SPB80N06S2L-H5
Código: 2N06LH5
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 300 W
Voltaje máximo drenador - fuente |Vds|: 55 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 80 A
Temperatura máxima de unión (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 2 V
Carga de la puerta (Qg): 145 nC
Tiempo de subida (tr): 23 nS
Conductancia de drenaje-sustrato (Cd): 1063 pF
Resistencia entre drenaje y fuente RDS(on): 0.005 Ohm
Paquete / Cubierta: TO263
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SPB80N06S2L-H5 Datasheet (PDF)
spp80n06s2l-h5 spb80n06s2l-h5.pdf
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SPP80N06S2L-H5SPB80N06S2L-H5OptiMOS Power-TransistorProduct SummaryFeatureVDS55 V N-ChannelRDS(on) 5 m Enhancement modeID 80 A 175C operating temperatureP- TO263 -3-2 P- TO220 -3-1 dv/dt ratedType Package Ordering Code MarkingSPP80N06S2L-H5 P- TO220 -3-1 Q67060-S60542N06LH5SPB80N06S2L-H5 P- TO263 -3-2 Q67060-S6055 2N06LH5Maximum Ratings, a
spp80n06s2l-09 spb80n06s2l-09.pdf
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SPP80N06S2L-09SPB80N06S2L-09OptiMOS Power-TransistorProduct SummaryFeatureVDS55 V N-ChannelRDS(on) 8.5 m Enhancement modeID 80 A Logic LevelP- TO263 -3-2 P- TO220 -3-1 175C operating temperature Avalanche rated dv/dt ratedType Package Ordering Code MarkingSPP80N06S2L-09 P- TO220 -3-1 Q67060-S60312N06L09SPB80N06S2L-09 P- TO263 -3-2
spp80n06s2l-07 spb80n06s2l-07.pdf
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SPP80N06S2L-07SPB80N06S2L-07OptiMOS Power-TransistorProduct SummaryFeatureVDS55 V N-ChannelRDS(on) 7 m Enhancement modeID 80 A Logic LevelP- TO263 -3-2 P- TO220 -3-1 175C operating temperature Avalanche rated dv/dt ratedType Package Ordering Code MarkingSPP80N06S2L-07 P- TO220 -3-1 Q67040-S42852N06L07SPB80N06S2L-07 P- TO263 -3-2 Q6
spp80n06s2-05 spb80n06s2-05.pdf
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www.DataSheet4U.com SPP80N06S2-05SPB80N06S2-05OptiMOS Power-TransistorProduct SummaryFeatureVDS 55 V N-ChannelRDS(on) max. SMD version 4.8 m Enhancement modeID 80 A 175C operating temperatureP- TO263 -3-2 P- TO220 -3-1 Avalanche rated dv/dt ratedType Package Ordering Code MarkingSPP80N06S2-05 P- TO220 -3-1 Q67040-S42452N0605SPB80N06S2-05
spb80n06s2-09 spp80n06s2-09.pdf
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SPP80N06S2-09Preliminary dataSPB80N06S2-09OptiMOS =Power-Transistor===Product SummaryFeatureVDS55 V N-ChannelRDS(on) 9.1 m Enhancement modeID 80 A 175C operating temperatureP-TO263-3-2 P-TO220-3-1 Avalanche rated dv/dt ratedType Package Ordering Code MarkingSPP80N06S2-09 P-TO220-3-1 Q67060-S60252N0609SPB80N06S2-09 P-TO263-3-2 Q67060-S6027 2N0609Maxi
spp80n06s2-08 spb80n06s2-08 spi80n06s2-08.pdf
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SPI80N06S2-08SPP80N06S2-08,SPB80N06S2-08OptiMOS Power-TransistorProduct SummaryFeatureVDS55 V N-ChannelRDS(on) 8 m Enhancement modeID 80 A 175C operating temperatureP- TO262 -3-1 P- TO263 -3-2 P- TO220 -3-1 Avalanche rated dv/dt ratedType Package Ordering Code MarkingSPP80N06S2-08 P- TO220 -3-1 Q67060-S42832N0608SPB80N06S2-08 P- TO263 -
Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: IRFS7434
History: IRFS7434
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Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: BSS123K2 | BRU26N50 | BRU24N50 | BRI7N65 | BRI7N60 | BRI740 | BRI65R380C | BRI5N65 | BRI50N06 | BRI4N70 | BRI2N70 | BRGN250N65YK | BRFL8N65 | BRFL7N65S | BRFL70R360C | BRFL65R380C