All MOSFET. SPB80N06S2L-H5 Datasheet

 

SPB80N06S2L-H5 Datasheet and Replacement


   Type Designator: SPB80N06S2L-H5
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 300 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 80 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 23 nS
   Cossⓘ - Output Capacitance: 1063 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.005 Ohm
   Package: TO263
 

 SPB80N06S2L-H5 substitution

   - MOSFET ⓘ Cross-Reference Search

 

SPB80N06S2L-H5 Datasheet (PDF)

 ..1. Size:311K  infineon
spp80n06s2l-h5 spb80n06s2l-h5.pdf pdf_icon

SPB80N06S2L-H5

SPP80N06S2L-H5SPB80N06S2L-H5OptiMOS Power-TransistorProduct SummaryFeatureVDS55 V N-ChannelRDS(on) 5 m Enhancement modeID 80 A 175C operating temperatureP- TO263 -3-2 P- TO220 -3-1 dv/dt ratedType Package Ordering Code MarkingSPP80N06S2L-H5 P- TO220 -3-1 Q67060-S60542N06LH5SPB80N06S2L-H5 P- TO263 -3-2 Q67060-S6055 2N06LH5Maximum Ratings, a

 2.1. Size:311K  infineon
spp80n06s2l-09 spb80n06s2l-09.pdf pdf_icon

SPB80N06S2L-H5

SPP80N06S2L-09SPB80N06S2L-09OptiMOS Power-TransistorProduct SummaryFeatureVDS55 V N-ChannelRDS(on) 8.5 m Enhancement modeID 80 A Logic LevelP- TO263 -3-2 P- TO220 -3-1 175C operating temperature Avalanche rated dv/dt ratedType Package Ordering Code MarkingSPP80N06S2L-09 P- TO220 -3-1 Q67060-S60312N06L09SPB80N06S2L-09 P- TO263 -3-2

 2.2. Size:308K  infineon
spp80n06s2l-07 spb80n06s2l-07.pdf pdf_icon

SPB80N06S2L-H5

SPP80N06S2L-07SPB80N06S2L-07OptiMOS Power-TransistorProduct SummaryFeatureVDS55 V N-ChannelRDS(on) 7 m Enhancement modeID 80 A Logic LevelP- TO263 -3-2 P- TO220 -3-1 175C operating temperature Avalanche rated dv/dt ratedType Package Ordering Code MarkingSPP80N06S2L-07 P- TO220 -3-1 Q67040-S42852N06L07SPB80N06S2L-07 P- TO263 -3-2 Q6

 4.1. Size:345K  infineon
spp80n06s2-05 spb80n06s2-05.pdf pdf_icon

SPB80N06S2L-H5

www.DataSheet4U.com SPP80N06S2-05SPB80N06S2-05OptiMOS Power-TransistorProduct SummaryFeatureVDS 55 V N-ChannelRDS(on) max. SMD version 4.8 m Enhancement modeID 80 A 175C operating temperatureP- TO263 -3-2 P- TO220 -3-1 Avalanche rated dv/dt ratedType Package Ordering Code MarkingSPP80N06S2-05 P- TO220 -3-1 Q67040-S42452N0605SPB80N06S2-05

Datasheet: SPN02N60C3 , SPP80N06S2-05 , SPB80N06S2-05 , SPP80N06S2L-07 , SPB80N06S2L-07 , SPP80N06S2L-09 , SPB80N06S2L-09 , SPP80N06S2L-H5 , IRFB3607 , SPP100N06S2L-05 , SPB100N06S2L-05 , G1003 , G1818 , G2002L , GKI03026 , GKI03039 , GKI03061 .

History: NCE60ND45G | FMC07N50E | IRLB8748PBF | RJK0214DPA | MSW10N80 | FDMC86248 | AP120N03K

Keywords - SPB80N06S2L-H5 MOSFET datasheet

 SPB80N06S2L-H5 cross reference
 SPB80N06S2L-H5 equivalent finder
 SPB80N06S2L-H5 lookup
 SPB80N06S2L-H5 substitution
 SPB80N06S2L-H5 replacement

 

 
Back to Top

 


 
.