SPB100N06S2L-05 Todos los transistores

 

SPB100N06S2L-05 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SPB100N06S2L-05

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 300 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 55 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 100 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 25 nS

Cossⓘ - Capacitancia de salida: 1330 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0044 Ohm

Encapsulados: TO263

 Búsqueda de reemplazo de SPB100N06S2L-05 MOSFET

- Selecciónⓘ de transistores por parámetros

 

SPB100N06S2L-05 datasheet

 0.1. Size:310K  infineon
spp100n06s2l-05 spb100n06s2l-05.pdf pdf_icon

SPB100N06S2L-05

SPP100N06S2L-05 SPB100N06S2L-05 OptiMOS Power-Transistor Product Summary Feature VDS 55 V N-Channel RDS(on) max. SMD version 4.4 m Enhancement mode ID 100 A Logic Level P- TO263 -3-2 P- TO220 -3-1 175 C operating temperature Avalanche rated dv/dt rated Type Package Ordering Code Marking SPP100N06S2L-05 P- TO220 -3-1 Q67060-S6043 PN06L05 SPB100N0

 3.1. Size:312K  1
spp100n06s2-05 spb100n06s2-05.pdf pdf_icon

SPB100N06S2L-05

SPP100N06S2-05 SPB100N06S2-05 OptiMOS Power-Transistor Product Summary Feature VDS 55 V N-Channel RDS(on) max. SMD version 4.7 m Enhancement mode ID 100 A 175 C operating temperature P- TO263 -3-2 P- TO220 -3-1 Avalanche rated dv/dt rated Type Package Ordering Code Marking SPP100N06S2-05 P- TO220 -3-1 Q67060-S6048 PN0605 SPB100N06S2-05 P- TO263 -3-2

 6.1. Size:200K  1
spp100n08s2l-07 spb100n08s2l-07.pdf pdf_icon

SPB100N06S2L-05

SPP100N08S2L-07 SPB100N08S2L-07 OptiMOS Power-Transistor Product Summary Feature VDS 75 V N-Channel RDS(on) max. SMD version 6.5 m Enhancement mode ID 100 A Logic Level P- TO263 -3-2 P- TO220 -3-1 175 C operating temperature Avalanche rated dv/dt rated Type Package Ordering Code Marking SPP100N08S2L-07 P- TO220 -3-1 Q67060-S6045 PN08L07 SPB100N0

 6.2. Size:676K  infineon
spb100n03s2-03 spb100n03s2.pdf pdf_icon

SPB100N06S2L-05

SPB100N03S2-03G OptiMOS TM Power-Transistor Product Summary Feature VDS 30 V N-Channel RDS(on) max. SMD version 3 m Enhancement mode ID 100 A Excellent Gate Charge x RDS(on) product (FOM) P-TO263 -3 Superior thermal resistance 175 C operating temperature Avalanche rated dv/d t rated; Halogen Free according to IEC61249-2-21 Marking Type Package

Otros transistores... SPB80N06S2-05 , SPP80N06S2L-07 , SPB80N06S2L-07 , SPP80N06S2L-09 , SPB80N06S2L-09 , SPP80N06S2L-H5 , SPB80N06S2L-H5 , SPP100N06S2L-05 , AON7410 , G1003 , G1818 , G2002L , GKI03026 , GKI03039 , GKI03061 , GKI03080 , GKI04031 .

History: BUZ353 | BS107ARL1 | MSF10N80 | IRHQ597110 | TPH2R608NH | IRF630MFP | IRHQ567110

 

 

 

 

↑ Back to Top
.