SPB100N06S2L-05 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SPB100N06S2L-05
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 300 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 55 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 100 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 25 nS
Cossⓘ - Capacitancia de salida: 1330 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0044 Ohm
Encapsulados: TO263
Búsqueda de reemplazo de SPB100N06S2L-05 MOSFET
- Selecciónⓘ de transistores por parámetros
SPB100N06S2L-05 datasheet
spp100n06s2l-05 spb100n06s2l-05.pdf
SPP100N06S2L-05 SPB100N06S2L-05 OptiMOS Power-Transistor Product Summary Feature VDS 55 V N-Channel RDS(on) max. SMD version 4.4 m Enhancement mode ID 100 A Logic Level P- TO263 -3-2 P- TO220 -3-1 175 C operating temperature Avalanche rated dv/dt rated Type Package Ordering Code Marking SPP100N06S2L-05 P- TO220 -3-1 Q67060-S6043 PN06L05 SPB100N0
spp100n06s2-05 spb100n06s2-05.pdf
SPP100N06S2-05 SPB100N06S2-05 OptiMOS Power-Transistor Product Summary Feature VDS 55 V N-Channel RDS(on) max. SMD version 4.7 m Enhancement mode ID 100 A 175 C operating temperature P- TO263 -3-2 P- TO220 -3-1 Avalanche rated dv/dt rated Type Package Ordering Code Marking SPP100N06S2-05 P- TO220 -3-1 Q67060-S6048 PN0605 SPB100N06S2-05 P- TO263 -3-2
spp100n08s2l-07 spb100n08s2l-07.pdf
SPP100N08S2L-07 SPB100N08S2L-07 OptiMOS Power-Transistor Product Summary Feature VDS 75 V N-Channel RDS(on) max. SMD version 6.5 m Enhancement mode ID 100 A Logic Level P- TO263 -3-2 P- TO220 -3-1 175 C operating temperature Avalanche rated dv/dt rated Type Package Ordering Code Marking SPP100N08S2L-07 P- TO220 -3-1 Q67060-S6045 PN08L07 SPB100N0
spb100n03s2-03 spb100n03s2.pdf
SPB100N03S2-03G OptiMOS TM Power-Transistor Product Summary Feature VDS 30 V N-Channel RDS(on) max. SMD version 3 m Enhancement mode ID 100 A Excellent Gate Charge x RDS(on) product (FOM) P-TO263 -3 Superior thermal resistance 175 C operating temperature Avalanche rated dv/d t rated; Halogen Free according to IEC61249-2-21 Marking Type Package
Otros transistores... SPB80N06S2-05 , SPP80N06S2L-07 , SPB80N06S2L-07 , SPP80N06S2L-09 , SPB80N06S2L-09 , SPP80N06S2L-H5 , SPB80N06S2L-H5 , SPP100N06S2L-05 , AON7410 , G1003 , G1818 , G2002L , GKI03026 , GKI03039 , GKI03061 , GKI03080 , GKI04031 .
History: BUZ353 | BS107ARL1 | MSF10N80 | IRHQ597110 | TPH2R608NH | IRF630MFP | IRHQ567110
History: BUZ353 | BS107ARL1 | MSF10N80 | IRHQ597110 | TPH2R608NH | IRF630MFP | IRHQ567110
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