GP1M005A040XG Todos los transistores

 

GP1M005A040XG MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: GP1M005A040XG
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS


   Máxima disipación de potencia (Pd): 50 W
   Voltaje máximo drenador - fuente |Vds|: 400 V
   Voltaje máximo fuente - puerta |Vgs|: 30 V
   Corriente continua de drenaje |Id|: 3.4 A
   Temperatura máxima de unión (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Tensión umbral entre puerta y fuente |Vgs(th)|: 4 V
   Carga de la puerta (Qg): 7.1 nC
   Tiempo de subida (tr): 10 nS
   Conductancia de drenaje-sustrato (Cd): 56 pF
   Resistencia entre drenaje y fuente RDS(on): 1.6 Ohm
   Paquete / Cubierta: TO-252 TO-251

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GP1M005A040XG Datasheet (PDF)

 ..1. Size:600K  globalpower
gp1m005a040xg.pdf

GP1M005A040XG GP1M005A040XG

GP1M005A040CG GP1M005A040PG Features VDSS = 440 V @Tjmax Low gate charge ID = 3.4A 100% avalanche tested RDS(on) = 1.6 W(max) @ VGS= 10 V Improved dv/dt capability Halogen free package JEDEC Qualification Improved ESD performance D-PAK D I-PAK G S Device Package Marking Remark GP1M005A040CG D-PAK GP1M005A040CG RoHS GP1M005A040PG I-PAK

 5.1. Size:601K  globalpower
gp1m005a050xh.pdf

GP1M005A040XG GP1M005A040XG

GP1M005A050CH GP1M005A050PH Features VDSS = 550 V @Tjmax Low gate charge ID = 4.5A 100% avalanche tested RDS(ON) = 1.65 W(max) @ VGS= 10 V Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification Fast reverse recovery D I-PAK D-PAK G S Device Package Marking Remark GP1M005A050CH D-PAK GP1M005A050CH Haloge

 5.2. Size:396K  globalpower
gp1m005a050xxx.pdf

GP1M005A040XG GP1M005A040XG

GP1M005A050HSGP1M005A050FSHFeaturesVDSS = 500V Low gate chargeID = 4A 100% avalanche testedRDS(ON) = 1.85 (max) @ VGS= 10 V Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification Fast reverse recovery DGSDevice Package Marking RemarkGP1M005A050HS TO-220 GP1M005A050HS RoHSGP1M005A050FSH TO-220F GP1M005A050F

 5.3. Size:387K  globalpower
gp1m005a050xx.pdf

GP1M005A040XG GP1M005A040XG

GP1M005A050HGP1M005A050FHFeaturesVDSS = 550 V @Tjmax Low gate chargeID = 4.5A 100% avalanche testedRDS(ON) = 1.65 (max) @ VGS= 10 V Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification Fast reverse recovery DGSDevice Package Marking RemarkGP1M005A050H TO-220 GP1M005A050H RoHSGP1M005A050FH TO-220F GP1M005A

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