GP1M005A040XG - аналоги, параметры транзистора

GP1M005A040XG даташит

..1. Size:600K globalpower
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GP1M005A040CG GP1M005A040PG Features VDSS = 440 V @Tjmax Low gate charge ID = 3.4A 100% avalanche tested RDS(on) = 1.6 W(max) @ VGS= 10 V Improved dv/dt capability Halogen free package JEDEC Qualification Improved ESD performance D-PAK D I-PAK G S Device Package Marking Remark GP1M005A040CG D-PAK GP1M005A040CG RoHS GP1M005A040PG I-PAK

5.1. Size:601K globalpower
gp1m005a050xh.pdf pdf_icon

GP1M005A050CH GP1M005A050PH Features VDSS = 550 V @Tjmax Low gate charge ID = 4.5A 100% avalanche tested RDS(ON) = 1.65 W(max) @ VGS= 10 V Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification Fast reverse recovery D I-PAK D-PAK G S Device Package Marking Remark GP1M005A050CH D-PAK GP1M005A050CH Haloge

5.2. Size:396K globalpower
gp1m005a050xxx.pdf pdf_icon

GP1M005A050HS GP1M005A050FSH Features VDSS = 500V Low gate charge ID = 4A 100% avalanche tested RDS(ON) = 1.85 (max) @ VGS= 10 V Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification Fast reverse recovery D G S Device Package Marking Remark GP1M005A050HS TO-220 GP1M005A050HS RoHS GP1M005A050FSH TO-220F GP1M005A050F

5.3. Size:387K globalpower
gp1m005a050xx.pdf pdf_icon

GP1M005A050H GP1M005A050FH Features VDSS = 550 V @Tjmax Low gate charge ID = 4.5A 100% avalanche tested RDS(ON) = 1.65 (max) @ VGS= 10 V Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification Fast reverse recovery D G S Device Package Marking Remark GP1M005A050H TO-220 GP1M005A050H RoHS GP1M005A050FH TO-220F GP1M005A

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