GP1M005A050XH Todos los transistores

 

GP1M005A050XH MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: GP1M005A050XH

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 92.5 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 500 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 4.5 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 32 nS

Cossⓘ - Capacitancia de salida: 61 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 1.65 Ohm

Encapsulados: TO-252 TO-251

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GP1M005A050XH datasheet

 ..1. Size:601K  globalpower
 gp1m005a050xh.pdf pdf_icon

GP1M005A050XH

GP1M005A050CH GP1M005A050PH Features VDSS = 550 V @Tjmax Low gate charge ID = 4.5A 100% avalanche tested RDS(ON) = 1.65 W(max) @ VGS= 10 V Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification Fast reverse recovery D I-PAK D-PAK G S Device Package Marking Remark GP1M005A050CH D-PAK GP1M005A050CH Haloge

 2.1. Size:396K  globalpower
 gp1m005a050xxx.pdf pdf_icon

GP1M005A050XH

GP1M005A050HS GP1M005A050FSH Features VDSS = 500V Low gate charge ID = 4A 100% avalanche tested RDS(ON) = 1.85 (max) @ VGS= 10 V Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification Fast reverse recovery D G S Device Package Marking Remark GP1M005A050HS TO-220 GP1M005A050HS RoHS GP1M005A050FSH TO-220F GP1M005A050F

 2.2. Size:387K  globalpower
 gp1m005a050xx.pdf pdf_icon

GP1M005A050XH

GP1M005A050H GP1M005A050FH Features VDSS = 550 V @Tjmax Low gate charge ID = 4.5A 100% avalanche tested RDS(ON) = 1.65 (max) @ VGS= 10 V Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification Fast reverse recovery D G S Device Package Marking Remark GP1M005A050H TO-220 GP1M005A050H RoHS GP1M005A050FH TO-220F GP1M005A

 5.1. Size:600K  globalpower
 gp1m005a040xg.pdf pdf_icon

GP1M005A050XH

GP1M005A040CG GP1M005A040PG Features VDSS = 440 V @Tjmax Low gate charge ID = 3.4A 100% avalanche tested RDS(on) = 1.6 W(max) @ VGS= 10 V Improved dv/dt capability Halogen free package JEDEC Qualification Improved ESD performance D-PAK D I-PAK G S Device Package Marking Remark GP1M005A040CG D-PAK GP1M005A040CG RoHS GP1M005A040PG I-PAK

MOSTRAR MÁS

Otros transistores... GP1M003A040XG , GP1M003A050HG-FG , GP1M003A050XG , GP1M003A080XG , GP1M003A080XX , GP1M003A090XX , GP1M004A090XX , GP1M005A040XG , IRFB7545 , GP1M005A050XX , GP1M005A050XXX , GP1M006A065XH , GP1M006A065XX , GP1M006A070XX , GP1M007A065XX , GP1M007A090XX , GP1M008A025XX .

History: LSF60R180HT | IRLH7134PBF | MTP8P10 | UPA1793G | TPCA8121 | IXFH12N100P

 

 

 

 

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