GP1M005A050XH MOSFET. Datasheet pdf. Equivalent
Type Designator: GP1M005A050XH
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 92.5 W
Maximum Drain-Source Voltage |Vds|: 500 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 4.5 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 11 nC
Rise Time (tr): 32 nS
Drain-Source Capacitance (Cd): 61 pF
Maximum Drain-Source On-State Resistance (Rds): 1.65 Ohm
Package: TO-252, TO-251
GP1M005A050XH Transistor Equivalent Substitute - MOSFET Cross-Reference Search
GP1M005A050XH Datasheet (PDF)
0.1. gp1m005a050xh.pdf 
Size:601K _globalpower
GP1M005A050CH GP1M005A050PH Features VDSS = 550 V @Tjmax Low gate charge ID = 4.5A 100% avalanche tested RDS(ON) = 1.65 W(max) @ VGS= 10 V Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification Fast reverse recovery D I-PAK D-PAK G S Device Package Marking Remark GP1M005A050CH D-PAK GP1M005A050CH Haloge
2.1. gp1m005a050xx.pdf Size:387K _globalpower
GP1M005A050H GP1M005A050FH Features VDSS = 550 V @Tjmax Low gate charge ID = 4.5A 100% avalanche tested RDS(ON) = 1.65 (max) @ VGS= 10 V Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification Fast reverse recovery D G S Device Package Marking Remark GP1M005A050H TO-220 GP1M005A050H RoHS GP1M005A050FH TO-220F GP1M005A
2.2. gp1m005a050xxx.pdf Size:396K _globalpower
GP1M005A050HS GP1M005A050FSH Features VDSS = 500V Low gate charge ID = 4A 100% avalanche tested RDS(ON) = 1.85 (max) @ VGS= 10 V Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification Fast reverse recovery D G S Device Package Marking Remark GP1M005A050HS TO-220 GP1M005A050HS RoHS GP1M005A050FSH TO-220F GP1M005A050F
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