All MOSFET. GP1M005A050XH Datasheet

 

GP1M005A050XH Datasheet and Replacement


   Type Designator: GP1M005A050XH
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 92.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 4.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 32 nS
   Cossⓘ - Output Capacitance: 61 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.65 Ohm
   Package: TO-252 TO-251
 

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GP1M005A050XH Datasheet (PDF)

 ..1. Size:601K  globalpower
gp1m005a050xh.pdf pdf_icon

GP1M005A050XH

GP1M005A050CH GP1M005A050PH Features VDSS = 550 V @Tjmax Low gate charge ID = 4.5A 100% avalanche tested RDS(ON) = 1.65 W(max) @ VGS= 10 V Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification Fast reverse recovery D I-PAK D-PAK G S Device Package Marking Remark GP1M005A050CH D-PAK GP1M005A050CH Haloge

 2.1. Size:396K  globalpower
gp1m005a050xxx.pdf pdf_icon

GP1M005A050XH

GP1M005A050HSGP1M005A050FSHFeaturesVDSS = 500V Low gate chargeID = 4A 100% avalanche testedRDS(ON) = 1.85 (max) @ VGS= 10 V Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification Fast reverse recovery DGSDevice Package Marking RemarkGP1M005A050HS TO-220 GP1M005A050HS RoHSGP1M005A050FSH TO-220F GP1M005A050F

 2.2. Size:387K  globalpower
gp1m005a050xx.pdf pdf_icon

GP1M005A050XH

GP1M005A050HGP1M005A050FHFeaturesVDSS = 550 V @Tjmax Low gate chargeID = 4.5A 100% avalanche testedRDS(ON) = 1.65 (max) @ VGS= 10 V Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification Fast reverse recovery DGSDevice Package Marking RemarkGP1M005A050H TO-220 GP1M005A050H RoHSGP1M005A050FH TO-220F GP1M005A

 5.1. Size:600K  globalpower
gp1m005a040xg.pdf pdf_icon

GP1M005A050XH

GP1M005A040CG GP1M005A040PG Features VDSS = 440 V @Tjmax Low gate charge ID = 3.4A 100% avalanche tested RDS(on) = 1.6 W(max) @ VGS= 10 V Improved dv/dt capability Halogen free package JEDEC Qualification Improved ESD performance D-PAK D I-PAK G S Device Package Marking Remark GP1M005A040CG D-PAK GP1M005A040CG RoHS GP1M005A040PG I-PAK

Datasheet: GP1M003A040XG , GP1M003A050HG-FG , GP1M003A050XG , GP1M003A080XG , GP1M003A080XX , GP1M003A090XX , GP1M004A090XX , GP1M005A040XG , 8N60 , GP1M005A050XX , GP1M005A050XXX , GP1M006A065XH , GP1M006A065XX , GP1M006A070XX , GP1M007A065XX , GP1M007A090XX , GP1M008A025XX .

History: SSM3K15CT | IPB120N08S4-03 | SQM90142E | CS65N20-30 | C3M0065100K | DMG8880LSS | IXFV110N10P

Keywords - GP1M005A050XH MOSFET datasheet

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