GP1M005A050XXX Todos los transistores

 

GP1M005A050XXX MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: GP1M005A050XXX
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 92.5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 500 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 4 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 25 nS
   Cossⓘ - Capacitancia de salida: 63 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.85 Ohm
   Paquete / Cubierta: TO-220 TO-220F
 

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GP1M005A050XXX Datasheet (PDF)

 ..1. Size:396K  globalpower
 gp1m005a050xxx.pdf pdf_icon

GP1M005A050XXX

GP1M005A050HSGP1M005A050FSHFeaturesVDSS = 500V Low gate chargeID = 4A 100% avalanche testedRDS(ON) = 1.85 (max) @ VGS= 10 V Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification Fast reverse recovery DGSDevice Package Marking RemarkGP1M005A050HS TO-220 GP1M005A050HS RoHSGP1M005A050FSH TO-220F GP1M005A050F

 1.1. Size:387K  globalpower
 gp1m005a050xx.pdf pdf_icon

GP1M005A050XXX

GP1M005A050HGP1M005A050FHFeaturesVDSS = 550 V @Tjmax Low gate chargeID = 4.5A 100% avalanche testedRDS(ON) = 1.65 (max) @ VGS= 10 V Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification Fast reverse recovery DGSDevice Package Marking RemarkGP1M005A050H TO-220 GP1M005A050H RoHSGP1M005A050FH TO-220F GP1M005A

 2.1. Size:601K  globalpower
 gp1m005a050xh.pdf pdf_icon

GP1M005A050XXX

GP1M005A050CH GP1M005A050PH Features VDSS = 550 V @Tjmax Low gate charge ID = 4.5A 100% avalanche tested RDS(ON) = 1.65 W(max) @ VGS= 10 V Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification Fast reverse recovery D I-PAK D-PAK G S Device Package Marking Remark GP1M005A050CH D-PAK GP1M005A050CH Haloge

 5.1. Size:600K  globalpower
 gp1m005a040xg.pdf pdf_icon

GP1M005A050XXX

GP1M005A040CG GP1M005A040PG Features VDSS = 440 V @Tjmax Low gate charge ID = 3.4A 100% avalanche tested RDS(on) = 1.6 W(max) @ VGS= 10 V Improved dv/dt capability Halogen free package JEDEC Qualification Improved ESD performance D-PAK D I-PAK G S Device Package Marking Remark GP1M005A040CG D-PAK GP1M005A040CG RoHS GP1M005A040PG I-PAK

MOSTRAR MÁS

Otros transistores... GP1M003A050XG , GP1M003A080XG , GP1M003A080XX , GP1M003A090XX , GP1M004A090XX , GP1M005A040XG , GP1M005A050XH , GP1M005A050XX , IRF9640 , GP1M006A065XH , GP1M006A065XX , GP1M006A070XX , GP1M007A065XX , GP1M007A090XX , GP1M008A025XX , GP1M008A050XG , GP1M008A050XX .

History: 2SJ125 | FDD6N50TF | UM6K31N | IRFU420B

 

 
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