All MOSFET. GP1M005A050XXX Datasheet

 

GP1M005A050XXX MOSFET. Datasheet pdf. Equivalent


   Type Designator: GP1M005A050XXX
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 92.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.5 V
   |Id|ⓘ - Maximum Drain Current: 4 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 11 nC
   trⓘ - Rise Time: 25 nS
   Cossⓘ - Output Capacitance: 63 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.85 Ohm
   Package: TO-220 TO-220F

 GP1M005A050XXX Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

GP1M005A050XXX Datasheet (PDF)

 ..1. Size:396K  globalpower
gp1m005a050xxx.pdf

GP1M005A050XXX
GP1M005A050XXX

GP1M005A050HSGP1M005A050FSHFeaturesVDSS = 500V Low gate chargeID = 4A 100% avalanche testedRDS(ON) = 1.85 (max) @ VGS= 10 V Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification Fast reverse recovery DGSDevice Package Marking RemarkGP1M005A050HS TO-220 GP1M005A050HS RoHSGP1M005A050FSH TO-220F GP1M005A050F

 1.1. Size:387K  globalpower
gp1m005a050xx.pdf

GP1M005A050XXX
GP1M005A050XXX

GP1M005A050HGP1M005A050FHFeaturesVDSS = 550 V @Tjmax Low gate chargeID = 4.5A 100% avalanche testedRDS(ON) = 1.65 (max) @ VGS= 10 V Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification Fast reverse recovery DGSDevice Package Marking RemarkGP1M005A050H TO-220 GP1M005A050H RoHSGP1M005A050FH TO-220F GP1M005A

 2.1. Size:601K  globalpower
gp1m005a050xh.pdf

GP1M005A050XXX
GP1M005A050XXX

GP1M005A050CH GP1M005A050PH Features VDSS = 550 V @Tjmax Low gate charge ID = 4.5A 100% avalanche tested RDS(ON) = 1.65 W(max) @ VGS= 10 V Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification Fast reverse recovery D I-PAK D-PAK G S Device Package Marking Remark GP1M005A050CH D-PAK GP1M005A050CH Haloge

 5.1. Size:600K  globalpower
gp1m005a040xg.pdf

GP1M005A050XXX
GP1M005A050XXX

GP1M005A040CG GP1M005A040PG Features VDSS = 440 V @Tjmax Low gate charge ID = 3.4A 100% avalanche tested RDS(on) = 1.6 W(max) @ VGS= 10 V Improved dv/dt capability Halogen free package JEDEC Qualification Improved ESD performance D-PAK D I-PAK G S Device Package Marking Remark GP1M005A040CG D-PAK GP1M005A040CG RoHS GP1M005A040PG I-PAK

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRF1407 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

 

 
Back to Top