GP1M007A065XX Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: GP1M007A065XX
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 120 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 650 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V
|Id|ⓘ - Corriente continua
de drenaje: 6.5 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo
de subida: 33 nS
Cossⓘ - Capacitancia de salida: 100 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 1.4 Ohm
Encapsulados: TO-252
TO-251
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GP1M007A065XX datasheet
..1. Size:513K globalpower
gp1m007a065xx.pdf 
GP1M007A065CG GP1M007A065PG N-channel MOSFET Features BVDSS ID RDS(on)MAX Low gate charge 650V 6.5A
5.1. Size:660K globalpower
gp1m007a090xx.pdf
GP1M007A090H GP1M007A090FH N-channel MOSFET Features Low gate charge VDSS = 990 V @Tjmax 100% avalanche tested Improved dv/dt capability ID = 7A RoHS compliant RDS(ON) = 1.9 (max) @ VGS= 10 V Halogen free package JEDEC Qualification D G S Device Package Marking Remark GP1M007A090H TO-220 GP1M007A090H RoHS GP1M007A090FH TO-220F GP1M007A090FH Halogen
8.1. Size:357K globalpower
gp1m006a065xx.pdf
GP1M006A065H GP1M006A065F(H) VDSS = 715 V @Tjmax Features ID = 5.5A Low gate charge RDS(on) = 1.6 (max) @ VGS= 10 V 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification D G S Device Package Marking Remark GP1M006A065H TO-220 GP1M006A065H RoHS GP1M006A065FH TO-220F GP1M006A065FH Halogen Free Absolut
8.2. Size:390K globalpower
gp1m009a090xx.pdf
GP1M009A090H GP1M009A090FH VDSS = 990 V @Tjmax Features ID = 9A Low gate charge RDS(ON) = 1.4 (max) @ VGS= 10 V 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification D G S Device Package Marking Remark GP1M009A090H TO-220 GP1M009A090H RoHS GP1M009A090FH TO-220F GP1M009A090FH Halogen Free Absolute M
8.3. Size:722K globalpower
gp1m006a070xx.pdf
GP1M006A070H GP1M006A070F(H) N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 700V 5.0A
8.4. Size:388K globalpower
gp1m003a080xx.pdf
GP1M003A080H/ GP1M003A080F GP1M003A080HH/ GP1M003A080FH VDSS = 880 V @Tjmax Features ID = 3A Low gate charge RDS(ON) = 4.2 (max) @ VGS= 10 V 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification D G S Device Package Marking Remark GP1M003A080H/ GP1M003A080F TO-220 / TO-220F GP1M003A080H/ GP1M003A080F
8.5. Size:601K globalpower
gp1m005a050xh.pdf
GP1M005A050CH GP1M005A050PH Features VDSS = 550 V @Tjmax Low gate charge ID = 4.5A 100% avalanche tested RDS(ON) = 1.65 W(max) @ VGS= 10 V Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification Fast reverse recovery D I-PAK D-PAK G S Device Package Marking Remark GP1M005A050CH D-PAK GP1M005A050CH Haloge
8.6. Size:592K globalpower
gp1m006a065xh.pdf
GP1M006A065CH GP1M006A065PH Features VDSS = 715 V @Tjmax Low gate charge ID = 5.5A 100% avalanche tested RDS(on) = 1.6 W(max) @ VGS= 10 V Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification D-PAK D I-PAK G S Device Package Marking Remark GP1M006A065CH D-PAK GP1M006A065CH Halogen Free GP1M006A0465PH I-PAK G
8.7. Size:396K globalpower
gp1m005a050xxx.pdf
GP1M005A050HS GP1M005A050FSH Features VDSS = 500V Low gate charge ID = 4A 100% avalanche tested RDS(ON) = 1.85 (max) @ VGS= 10 V Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification Fast reverse recovery D G S Device Package Marking Remark GP1M005A050HS TO-220 GP1M005A050HS RoHS GP1M005A050FSH TO-220F GP1M005A050F
8.8. Size:418K globalpower
gp1m003a050hg-fg.pdf
GP1M003A050HG GP1M003A050FG Features N-channel MOSFET Low gate charge BVDSS ID RDS(on) 100% avalanche tested 500V 2.5A
8.9. Size:384K globalpower
gp1m008a050xx.pdf
GP1M008A050HG GP1M008A050FG N-channel MOSFET Features Low gate charge BVDSS ID RDS(on) 100% avalanche tested 500V 8A
8.10. Size:517K globalpower
gp1m003a050xg.pdf
GP1M003A050CG GP1M003A050PG N-channel MOSFET Features Low gate charge BVDSS ID RDS(on) 100% avalanche tested 500V 2.5A
8.11. Size:492K globalpower
gp1m003a080xg.pdf
GP1M003A080CG GP1M003A080PG Features VDSS = 880 V @Tjmax Low gate charge ID = 3A 100% avalanche tested Improved dv/dt capability RDS(on) = 4.2 W(max) @ VGS= 10 V RoHS compliant Halogen free package JEDEC Qualification D-PAK D I-PAK G S Device Package Marking Remark GP1M003A080CH/GP1M003A080PH D-PAK/I-PAK GP1M003A080CH/GP1M003A080PH Halog
8.12. Size:941K globalpower
gp1m003a090xx.pdf
GP1M003A090C GP1M003A090PH N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 900V 2.5A
8.13. Size:482K globalpower
gp1m003a040xg.pdf
GP1M003A040CG GP1M003A040PG Features VDSS = 440 V @Tjmax Low gate charge ID = 2A 100% avalanche tested RDS(on) = 3.4 W(max) @ VGS= 10 V Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification Improved ESD performance D D-PAK I-PAK G S Device Package Marking Remark GP1M003A040CG D-PAK GP1M003A040CG RoHS
8.14. Size:539K globalpower
gp1m009a090n.pdf
GP1M009A090N N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 100% avalanche tested 900V 9.5A
8.15. Size:408K globalpower
gp1m009a050xxx.pdf
GP1M009A050HS GP1M009A050FSH N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 500V 8.5A
8.16. Size:415K globalpower
gp1m004a090xx.pdf
GP1M004A090H GP1M004A090FH VDSS = 990 V @Tjmax Features ID = 4A Low gate charge RDS(ON) = 4.0 (max) @ VGS= 10 V 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification D G S Device Package Marking Remark GP1M004A090H TO-220 GP1M004A090H RoHS GP1M004A090FH TO-220F GP1M004A090FH Halogen Free Absolute M
8.17. Size:502K globalpower
gp1m008a050xg.pdf
GP1M008A050CG GP1M008A050PG N-channel MOSFET Features Low gate charge BVDSS ID RDS(on) 100% avalanche tested 500V 8A
8.18. Size:378K globalpower
gp1m009a070x.pdf
GP1M009A070H GP1M006A070F N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 700V 7A
8.19. Size:405K globalpower
gp1m009a020xx.pdf
GP1M009A020HG GP1M009A020FG Features N-channel MOSFET Low gate charge BVDSS ID RDS(on)MAX 100% avalanche tested 200V 9A
8.20. Size:1382K globalpower
gp1m008a080xx.pdf
GP1M008A080H GP1M008A080FH N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 100% avalanche tested 800V 8A
8.21. Size:381K globalpower
gp1m008a025xx.pdf
GP1M008A025HG GP1M008A025FG Features N-channel MOSFET Low gate charge BVDSS ID RDS(on)MAX 100% avalanche tested 250V 8A
8.22. Size:503K globalpower
gp1m009a020xg.pdf
GP1M009A020CG GP1M009A020PG N-channel MOSFET Features Low gate charge BVDSS ID RDS(on)MAX 100% avalanche tested 200V 9A
8.23. Size:390K globalpower
gp1m009a060xx.pdf
GP1M009A060H GP1M009A060FH VDSS = 660 V @Tjmax Features ID = 9A Low gate charge RDS(ON) = 1.0 (max) @ VGS= 10 V 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification D G S Device Package Marking Remark GP1M009A060H TO-220 GP1M009A060H RoHS GP1M009A060FH TO-220F GP1M009A060FH Halogen Free Absolute Ma
8.24. Size:600K globalpower
gp1m005a040xg.pdf
GP1M005A040CG GP1M005A040PG Features VDSS = 440 V @Tjmax Low gate charge ID = 3.4A 100% avalanche tested RDS(on) = 1.6 W(max) @ VGS= 10 V Improved dv/dt capability Halogen free package JEDEC Qualification Improved ESD performance D-PAK D I-PAK G S Device Package Marking Remark GP1M005A040CG D-PAK GP1M005A040CG RoHS GP1M005A040PG I-PAK
8.25. Size:387K globalpower
gp1m005a050xx.pdf
GP1M005A050H GP1M005A050FH Features VDSS = 550 V @Tjmax Low gate charge ID = 4.5A 100% avalanche tested RDS(ON) = 1.65 (max) @ VGS= 10 V Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification Fast reverse recovery D G S Device Package Marking Remark GP1M005A050H TO-220 GP1M005A050H RoHS GP1M005A050FH TO-220F GP1M005A
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