GP1M007A065XX MOSFET. Datasheet pdf. Equivalent

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GP1M007A065XX Datasheet (PDF)

0.1. gp1m007a065xx.pdf Size:513K _globalpower

GP1M007A065CG GP1M007A065PG N-channel MOSFET Features BVDSS ID RDS(on)MAX  Low gate charge 650V 6.5A <1.4W  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification D-PAK I-PAK Device Package Marking Remark GP1M007A065CG D-PAK GP1M007A065CG RoHS GP1M007A065PG I-PAK GP1M007A065PG RoHS Absolute

5.1. gp1m007a090xx.pdf Size:660K _globalpower

GP1M007A090H GP1M007A090FH N-channel MOSFET Features  Low gate charge VDSS = 990 V @Tjmax  100% avalanche tested  Improved dv/dt capability ID = 7A  RoHS compliant RDS(ON) = 1.9 (max) @ VGS= 10 V  Halogen free package  JEDEC Qualification D G S Device Package Marking Remark GP1M007A090H TO-220 GP1M007A090H RoHS GP1M007A090FH TO-220F GP1M007A090FH Halogen

 8.1. gp1m009a090n.pdf Size:539K _globalpower

GP1M009A090N N-channel MOSFET Features BVDSS ID RDS(on)  Low gate charge  100% avalanche tested 900V 9.5A < 1.4W  Improved dv/dt capability  RoHS compliant  JEDEC Qualification D TO-3PN G S Device Package Marking Remark GP1M009A090N TO-3PN GP1M009A090N RoHS Absolute Maximum Ratings Parameter Symbol Value Unit Drain-Source Voltage VDS 900 V Ga

8.2. gp1m003a090xx.pdf Size:941K _globalpower

GP1M003A090C GP1M003A090PH N-channel MOSFET Features BVDSS ID RDS(on)  Low gate charge 900V 2.5A <5.1W  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification D-PAK I-PAK Device Package Marking Remark GP1M003A090C D-PAK GP1M003A090C RoHS GP1M003A090PH I-PAK GP1M003A090PH Halogen Free Absolut

 8.3. gp1m003a080xx.pdf Size:388K _globalpower

GP1M003A080H/ GP1M003A080F GP1M003A080HH/ GP1M003A080FH VDSS = 880 V @Tjmax Features ID = 3A  Low gate charge RDS(ON) = 4.2 (max) @ VGS= 10 V  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification D G S Device Package Marking Remark GP1M003A080H/ GP1M003A080F TO-220 / TO-220F GP1M003A080H/ GP1M003A080F

8.4. gp1m006a070xx.pdf Size:722K _globalpower

GP1M006A070H GP1M006A070F(H) N-channel MOSFET Features BVDSS ID RDS(on)  Low gate charge 700V 5.0A <1.65  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification Device Package Marking Remark GP1M006A070H TO-220 GP1M006A070H RoHS GP1M006A070FH TO-220F GP1M006A070FH Halogen Free Absolute Maximum Ratings Par

 8.5. gp1m008a080xx.pdf Size:1382K _globalpower

GP1M008A080H GP1M008A080FH N-channel MOSFET Features BVDSS ID RDS(on)  Low gate charge  100% avalanche tested 800V 8A < 1.4  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification Device Package Marking Remark GP1M008A080H TO-220 GP1M008A080H RoHS GP1M008A080FH TO-220F GP1M008A080FH Halogen Free Absolute Maximum Ratings Parame

8.6. gp1m005a050xx.pdf Size:387K _globalpower

GP1M005A050H GP1M005A050FH Features VDSS = 550 V @Tjmax  Low gate charge ID = 4.5A  100% avalanche tested RDS(ON) = 1.65 (max) @ VGS= 10 V  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification  Fast reverse recovery D G S Device Package Marking Remark GP1M005A050H TO-220 GP1M005A050H RoHS GP1M005A050FH TO-220F GP1M005A

8.7. gp1m005a050xh.pdf Size:601K _globalpower

GP1M005A050CH GP1M005A050PH Features VDSS = 550 V @Tjmax  Low gate charge ID = 4.5A  100% avalanche tested RDS(ON) = 1.65 W(max) @ VGS= 10 V  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification  Fast reverse recovery D I-PAK D-PAK G S Device Package Marking Remark GP1M005A050CH D-PAK GP1M005A050CH Haloge

8.8. gp1m008a050xx.pdf Size:384K _globalpower

GP1M008A050HG GP1M008A050FG N-channel MOSFET Features  Low gate charge BVDSS ID RDS(on)  100% avalanche tested 500V 8A <0.85  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification Device Package Marking Remark GP1M008A050HG TO-220 GP1M008A050HG RoHS GP1M008A050FG TO-220F GP1M008A050FG RoHS Absolute Maximum Ratings GP1M008A050

8.9. gp1m006a065xh.pdf Size:592K _globalpower

GP1M006A065CH GP1M006A065PH Features VDSS = 715 V @Tjmax  Low gate charge ID = 5.5A  100% avalanche tested RDS(on) = 1.6 W(max) @ VGS= 10 V  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification D-PAK D I-PAK G S Device Package Marking Remark GP1M006A065CH D-PAK GP1M006A065CH Halogen Free GP1M006A0465PH I-PAK G

8.10. gp1m009a020xx.pdf Size:405K _globalpower

GP1M009A020HG GP1M009A020FG Features N-channel MOSFET  Low gate charge BVDSS ID RDS(on)MAX  100% avalanche tested 200V 9A <0.4  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification Device Package Marking Remark GP1M009A020HG TO-220 GP1M009A020HG RoHS GP1M009A020FG TO-220F GP1M009A020FG RoHS Absolute Maximum Ratings GP1M009A0

8.11. gp1m009a050xxx.pdf Size:408K _globalpower

GP1M009A050HS GP1M009A050FSH N-channel MOSFET Features BVDSS ID RDS(on)  Low gate charge 500V 8.5A <0.85  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification D G S Device Package Marking Remark GP1M009A050HS TO-220 GP1M009A050HS RoHS GP1M009A050FSH TO-220F GP1M009A050FSH Halogen Free Absolute Maximum

8.12. gp1m003a040xg.pdf Size:482K _globalpower

GP1M003A040CG GP1M003A040PG Features VDSS = 440 V @Tjmax  Low gate charge ID = 2A  100% avalanche tested RDS(on) = 3.4 W(max) @ VGS= 10 V  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification  Improved ESD performance D D-PAK I-PAK G S Device Package Marking Remark GP1M003A040CG D-PAK GP1M003A040CG RoHS

8.13. gp1m003a050xg.pdf Size:517K _globalpower

GP1M003A050CG GP1M003A050PG N-channel MOSFET Features  Low gate charge BVDSS ID RDS(on)  100% avalanche tested 500V 2.5A <2.8W  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification D-PAK I-PAK Device Package Marking Remark GP1M003A050CG D-PAK GP1M003A050CG RoHS GP1M003A050PG I-PAK GP1M003A050PG RoHS Absolute Maxim

8.14. gp1m004a090xx.pdf Size:415K _globalpower

GP1M004A090H GP1M004A090FH VDSS = 990 V @Tjmax Features ID = 4A  Low gate charge RDS(ON) = 4.0 (max) @ VGS= 10 V  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification D G S Device Package Marking Remark GP1M004A090H TO-220 GP1M004A090H RoHS GP1M004A090FH TO-220F GP1M004A090FH Halogen Free Absolute M

8.15. gp1m008a050xg.pdf Size:502K _globalpower

GP1M008A050CG GP1M008A050PG N-channel MOSFET Features  Low gate charge BVDSS ID RDS(on)  100% avalanche tested 500V 8A <0.85W  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification D-PAK I-PAK Device Package Marking Remark GP1M008A050CG D-PAK GP1M008A050CG RoHS GP1M008A050PG I-PAK GP1M008A050PG RoHS Absolute Maxi

8.16. gp1m009a020xg.pdf Size:503K _globalpower

GP1M009A020CG GP1M009A020PG N-channel MOSFET Features  Low gate charge BVDSS ID RDS(on)MAX  100% avalanche tested 200V 9A <0.4W  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification D-PAK I-PAK Device Package Marking Remark GP1M009A020CG D-PAK GP1M009A020CG RoHS GP1M009A020PG I-PAK GP1M009A020PG RoHS Absolute Ma

8.17. gp1m003a080xg.pdf Size:492K _globalpower

GP1M003A080CG GP1M003A080PG Features VDSS = 880 V @Tjmax  Low gate charge ID = 3A  100% avalanche tested  Improved dv/dt capability RDS(on) = 4.2 W(max) @ VGS= 10 V  RoHS compliant  Halogen free package  JEDEC Qualification D-PAK D I-PAK G S Device Package Marking Remark GP1M003A080CH/GP1M003A080PH D-PAK/I-PAK GP1M003A080CH/GP1M003A080PH Halog

8.18. gp1m006a065xx.pdf Size:357K _globalpower

GP1M006A065H GP1M006A065F(H) VDSS = 715 V @Tjmax Features ID = 5.5A  Low gate charge RDS(on) = 1.6 (max) @ VGS= 10 V  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification D G S Device Package Marking Remark GP1M006A065H TO-220 GP1M006A065H RoHS GP1M006A065FH TO-220F GP1M006A065FH Halogen Free Absolut

8.19. gp1m009a060xx.pdf Size:390K _globalpower

GP1M009A060H GP1M009A060FH VDSS = 660 V @Tjmax Features ID = 9A  Low gate charge RDS(ON) = 1.0 (max) @ VGS= 10 V  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification D G S Device Package Marking Remark GP1M009A060H TO-220 GP1M009A060H RoHS GP1M009A060FH TO-220F GP1M009A060FH Halogen Free Absolute Ma

8.20. gp1m009a070x.pdf Size:378K _globalpower

GP1M009A070H GP1M006A070F N-channel MOSFET Features BVDSS ID RDS(on)  Low gate charge 700V 7A <1.05  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification D G S Device Package Marking Remark GP1M009A070H TO-220 GP1M009A070H RoHS GP1M009A070F TO-220F GP1M009A070F RoHS Absolute Maximum Ratings Paramete

8.21. gp1m009a090xx.pdf Size:390K _globalpower

GP1M009A090H GP1M009A090FH VDSS = 990 V @Tjmax Features ID = 9A  Low gate charge RDS(ON) = 1.4 (max) @ VGS= 10 V  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification D G S Device Package Marking Remark GP1M009A090H TO-220 GP1M009A090H RoHS GP1M009A090FH TO-220F GP1M009A090FH Halogen Free Absolute M

8.22. gp1m008a025xx.pdf Size:381K _globalpower

GP1M008A025HG GP1M008A025FG Features N-channel MOSFET  Low gate charge BVDSS ID RDS(on)MAX  100% avalanche tested 250V 8A <0.6  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification Device Package Marking Remark GP1M008A025HG TO-220 GP1M008A025HG RoHS GP1M008A025FG TO-220F GP1M008A025FG RoHS Absolute Maximum Ratings GP1M008A0

8.23. gp1m005a040xg.pdf Size:600K _globalpower

GP1M005A040CG GP1M005A040PG Features VDSS = 440 V @Tjmax  Low gate charge ID = 3.4A  100% avalanche tested RDS(on) = 1.6 W(max) @ VGS= 10 V  Improved dv/dt capability  Halogen free package  JEDEC Qualification  Improved ESD performance D-PAK D I-PAK G S Device Package Marking Remark GP1M005A040CG D-PAK GP1M005A040CG RoHS GP1M005A040PG I-PAK

8.24. gp1m003a050hg-fg.pdf Size:418K _globalpower

GP1M003A050HG GP1M003A050FG Features N-channel MOSFET  Low gate charge BVDSS ID RDS(on)  100% avalanche tested 500V 2.5A < 2.8  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification  Improved ESD performance Device Package Marking Remark GP1M003A050HG TO-220 GP1M003A050HG RoHS GP1M003A050FG TO-220F GP1M003A050FG RoHS Absolu

8.25. gp1m005a050xxx.pdf Size:396K _globalpower

GP1M005A050HS GP1M005A050FSH Features VDSS = 500V  Low gate charge ID = 4A  100% avalanche tested RDS(ON) = 1.85 (max) @ VGS= 10 V  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification  Fast reverse recovery D G S Device Package Marking Remark GP1M005A050HS TO-220 GP1M005A050HS RoHS GP1M005A050FSH TO-220F GP1M005A050F

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