GP1M009A050XXX Todos los transistores

 

GP1M009A050XXX MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: GP1M009A050XXX
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 127 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 500 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 8.5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 24 nC
   trⓘ - Tiempo de subida: 22 nS
   Cossⓘ - Capacitancia de salida: 120 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.85 Ohm
   Paquete / Cubierta: TO-220 TO-220F

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GP1M009A050XXX Datasheet (PDF)

 ..1. Size:408K  globalpower
gp1m009a050xxx.pdf

GP1M009A050XXX
GP1M009A050XXX

GP1M009A050HSGP1M009A050FSHN-channel MOSFETFeaturesBVDSS ID RDS(on) Low gate charge500V 8.5A

 5.1. Size:390K  globalpower
gp1m009a090xx.pdf

GP1M009A050XXX
GP1M009A050XXX

GP1M009A090HGP1M009A090FHVDSS = 990 V @TjmaxFeaturesID = 9A Low gate chargeRDS(ON) = 1.4 (max) @ VGS= 10 V 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification DGSDevice Package Marking RemarkGP1M009A090H TO-220 GP1M009A090H RoHSGP1M009A090FH TO-220F GP1M009A090FH Halogen FreeAbsolute M

 5.2. Size:539K  globalpower
gp1m009a090n.pdf

GP1M009A050XXX
GP1M009A050XXX

GP1M009A090N N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 100% avalanche tested 900V 9.5A

 5.3. Size:378K  globalpower
gp1m009a070x.pdf

GP1M009A050XXX
GP1M009A050XXX

GP1M009A070HGP1M006A070FN-channel MOSFETFeaturesBVDSS ID RDS(on) Low gate charge700V 7A

 5.4. Size:405K  globalpower
gp1m009a020xx.pdf

GP1M009A050XXX
GP1M009A050XXX

GP1M009A020HGGP1M009A020FGFeaturesN-channel MOSFET Low gate chargeBVDSS ID RDS(on)MAX 100% avalanche tested200V 9A

 5.5. Size:503K  globalpower
gp1m009a020xg.pdf

GP1M009A050XXX
GP1M009A050XXX

GP1M009A020CG GP1M009A020PG N-channel MOSFET Features Low gate charge BVDSS ID RDS(on)MAX 100% avalanche tested 200V 9A

 5.6. Size:390K  globalpower
gp1m009a060xx.pdf

GP1M009A050XXX
GP1M009A050XXX

GP1M009A060HGP1M009A060FHVDSS = 660 V @TjmaxFeaturesID = 9A Low gate chargeRDS(ON) = 1.0 (max) @ VGS= 10 V 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC QualificationDGSDevice Package Marking RemarkGP1M009A060H TO-220 GP1M009A060H RoHSGP1M009A060FH TO-220F GP1M009A060FH Halogen FreeAbsolute Ma

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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